SLLSEJ9E
December 2014 – October 2022
TPD2E2U06-Q1
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings—AEC Specification
6.3
ESD Ratings—IEC Specification
6.4
ESD Ratings—ISO Specification
6.5
Recommended Operating Conditions
6.6
Thermal Information
6.7
Electrical Characteristics
6.8
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
AEC-Q101 Qualified
7.3.2
IEC 61000-4-2 Level 4
7.3.3
IO Capacitance
7.3.4
DC Breakdown Voltage
7.3.5
Ultra-Low Leakage Current
7.3.6
Low ESD Clamping Voltage
7.3.7
Industrial Temperature Range
7.3.8
Small Easy-to-Route Packages
7.4
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.2.1
Signal Range
8.2.2.2
Operating Frequency
8.2.3
Application Curve
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.2
Layout Example
11
Device and Documentation Support
11.1
Documentation Support
11.1.1
Related Documentation
11.2
Receiving Notification of Documentation Updates
11.3
Support Resources
11.4
Trademarks
11.5
Electrostatic Discharge Caution
11.6
Glossary
12
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
DCK|3
MPDS295F
DBZ|3
MPDS108G
Thermal pad, mechanical data (Package|Pins)
Orderable Information
sllsej9e_oa
sllsej9e_pm
6.2
ESD Ratings—AEC Specification
VALUE
UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per AEC Q100-002
(1)
±10000
V
Charged device model (CDM), per AEC Q100-011
±1000
(1)
AAEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.