SLVSDG5C March   2016  – August 2020 TPD3S014-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—AEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 ESD Ratings—ISO Specification
    5. 6.5 Recommended Operating Conditions
    6. 6.6 Thermal Information
    7. 6.7 Electrical Characteristics: TJ = TA = 25°C
    8. 6.8 Electrical Characteristics: –40°C ≤ TA ≤ 105°C
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO)
      2. 8.3.2 Enable
      3. 8.3.3 Internal Charge Pump
      4. 8.3.4 Current Limit
      5. 8.3.5 Output Discharge
      6. 8.3.6 Input and Output Capacitance
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation With VIN < 4 V (Minimum VIN)
      2. 8.4.2 Operation With EN Control
      3. 8.4.3 Operation of Level 4 IEC 61000-4-2 ESD Protection
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Implementing Active Low Logic
      4. 9.2.4 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Power Dissipation and Junction Temperature
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.3 Internal Charge Pump

The TPD3S014-Q1 incorporates an internal charge pump and gate drive circuitry necessary to drive the N-channel MOSFET. The charge pump supplies power to the gate driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The driver incorporates circuitry that controls the rise and fall times of the output voltage to limit large current and voltage surges on the input supply, and provides built-in soft-start functionality. The MOSFET power switch blocks current from OUT to IN when turned off by the UVLO or disabled.