SLLS682O July   2006  – July 2019 TPD4E001

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Application Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—JEDEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted), VCC = 5 V ± 10%
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VCC Supply voltage 0.9 5.5 V
ICC Supply current 1 100 nA
VF Diode forward voltage IF = 10 mA 0.65 0.95 V
VBR Breakdown Voltage IBR = 10 mA 11 V
VC Channel clamp voltage TA = 25°C, ±15-kV HBM,
IF = 10 A		 Positive transients VCC + 25 V
Negative transients –25
TA = 25°C,
±8-kV contact discharge
(IEC 61000-4-2), IF = 24 A		 Positive transients VCC + 60
Negative transients –60
TA = 25°C,
±15-kV air-gap discharge
(IEC 61000-4-2), IF = 45 A		 Positive transients VCC + 100
Negative transients –100
Surge strike on IO pin,
GND pin grounded,
IPP = 5 A, 8/20 µs(2) 		Positive transients 17
VRWM Reverse stand-off voltage IO pin to GND pin 5.5 V
II/O Channel leakage current Vi/o = GND to VCC ±1 nA
CI/O Channel input capacitance VCC = 5 V, bias of VCC/2; ƒ = 10 MHz 1.5 pF
(1) Typical values are at VCC = 5 V and TA = 25°C.
(2) Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to ICE61000-4-5.