SLVS615F July   2006  – December 2016 TPD4E002

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—JEDEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range on I/O1 Through I/O2
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Detailed Description

7.1 Overview

The TPD4E002 is a four-channel TVS protection diode array. The TPD4E002 is rated to dissipate contact ESD strikes of ±15 kV, beyond Level 4 as specified in the IEC 61000-4-2 international standard. This device has an 11-pF I/O capacitance per channel, making it ideal for use in data I/O interfaces of up to 100 MHz.

7.2 Functional Block Diagram

TPD4E002 Block_Diagram.gif

7.3 Feature Description

The TPD4E002 is a TVS that provides ESD protection for up to four channels, withstanding up to ±15-kV contact ESD per IEC 61000-4-2 and 2.5-A peak pulse current per IEC 61000-4-5. The monolithic technology yields exceptionally small variations in capacitance between any I/O pin of the TPD4E002. The small footprint is ideal for applications where space-saving designs are important.

7.4 Device Functional Modes

The TPD4E002 device is a passive integrated circuit that triggers when voltages are above VBR or below the diodes VF of approximately –0.5 V. During ESD events, voltages as high as ±15-kV contact ESD can be directed to ground through the internal diodes. Once the voltages on the protected line fall below the trigger levels of TPD4E002 (usually within tens of nano seconds) the device reverts to its high-impedance state.