The TPD4E02B04-Q1 is an automotive-qualified bidirectional TVS ESD protection diode array for USB Type-C and HDMI 2.0 circuit protection. The TPD4E02B04-Q1 is rated to dissipate ESD strikes up to 10 kV per ISO 10605 (330 pF, 330 Ω) ESD standard. The TPD4E02B04 is also rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4).
This device features a 0.25-pF IO capacitance per channel making it ideal for protecting high-speed interfaces up to 10 Gbps such as USB 3.1 Gen2. The low dynamic resistance and low clamping voltage ensure system level protection against transient events.
The TPD4E02B04-Q1 is offered in the industry standard USON-10 (DQA) package. The package features flow-through routing and 0.5-mm pin pitch easing implementation and reducing design time.
This device is also available without automotive qualification: TPD4E02B04.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TPD4E02B04-Q1 | USON (10) | 2.50 mm × 1.00 mm |
PIN | TYPE | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
GND | 3 | Ground | Ground. Connect to ground |
GND | 8 | ||
IO1 | 1 | I/O | ESD protected channel |
IO2 | 2 | ||
IO3 | 4 | ||
IO4 | 5 | ||
NC | 6 | NC | Not connected; Used for optional straight-through routing. Can be left floating or grounded |
NC | 7 | ||
NC | 9 | ||
NC | 10 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Electrical fast transient | IEC 61000-4-5 (5/50 ns) at 25°C | 80 | A | |
Peak pulse | IEC 61000-4-5 power (tp - 8/20 µs) at 25°C | 17 | W | |
IEC 61000-4-5 Ccurrent (tp - 8/20 µs) at 25°C | 2 | A | ||
TA | Operating free-air temperature | –40 | 125 | °C |
Tstg | Storage temperature | –65 | 155 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2500 | V |
Charged-device model (CDM), per AEC Q100-011 | ±1000 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | IEC 61000-4-2 contact discharge | ±12000 | V |
IEC 61000-4-2 air-gap discharge | ±15000 |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | ISO 10605 330 pF, 330 Ω, IO | Contact discharge | ±10000 | V |
Air-gap discharge | ±10000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIO | Input pin voltage | –3.6 | 3.6 | V |
TA | Operating free-air temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPD4E02B04-Q1 | UNIT | |
---|---|---|---|
DQA (USON) | |||
10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 348.7 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 214.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 270.7 | °C/W |
ψJT | Junction-to-top characterization parameter | 81.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 270.7 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VRWM | Reverse stand-off voltage | IIO < 10 nA | –3.6 | 3.6 | V | |
VBRF | Breakdown voltage, any IO pin to GND(1) | IIO = 1 mA, TA = 25°C | 5.5 | 6.4 | 7.5 | V |
VBRR | Breakdown voltage, GND to any IO pin(1) | IIO = 1 mA, TA = 25°C | –5.5 | –6.4 | –7.5 | V |
VHOLD | Holding voltage(2) | IIO = 1 mA | 5.8 | V | ||
VCLAMP | Clamping voltage | IPP = 1 A, TLP, from IO to GND | 6.6 | V | ||
IPP = 5 A, TLP, from IO to GND | 8.8 | |||||
IPP = 1 A, TLP, from GND to IO | 6.6 | |||||
IPP = 5 A, TLP, from GND to IO | 8.8 | |||||
ILEAK | Leakage current, any IO to GND | VIO = ±2.5 V | 10 | nA | ||
RDYN | Dynamic resistance | IO to GND | 0.47 | Ω | ||
GND to IO | 0.47 | |||||
CL | Line capacitance | VIO = 0 V, f = 1 MHz, IO to GND, TA = 25°C | 0.25 | 0.33 | pF | |
ΔCL | Variation of line capacitance | Delta of capacitance between any two IO pins, VIO = 0 V, f = 1 MHz, TA = 25°C, GND = 0 V | 0.01 | 0.07 | pF | |
CCROSS | Channel to channel capacitance | Capacitance from one IO to another, VIO = 0 V, f = 1 MHz, GND = 0 V | 0.13 | 0.16 | pF |
The TPD4E02B04-Q1 is an automotive-qualified bidirectional ESD Protection Diode with ultra-low capacitance. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 (Level 4) International Standard. The ultra-low capacitance makes this device ideal for protecting any super high-speed signal pins.
This device is qualified to AEC-Q101 standards and is qualified to operate from –40°C to +125°C.
The I/O pins can withstand ESD events of at least ±10-kV contact and ±10-kV air gap according to the ISO 10605 (330 pF, 330 Ω) standard. The device diverts the current to ground.
The I/O pins can withstand ESD events up to ±12-kV contact and ±15-kV air gap. An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-Ω impedance). An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand surge events up to 2 A and 17 W (8/20 µs waveform). An ESD-surge clamp diverts this current to ground.
The capacitance between each I/O pin to ground is 0.25 pF (typical). This device supports data rates up to 10 Gbps.
The DC breakdown voltage of each I/O pin is a minimum of ±5.5 V. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of ±3.6 V.
The I/O pins feature an ultra-low leakage current of 10 nA (maximum) with a bias of ±2.5 V.
The I/O pins feature an ESD clamp that is capable of clamping the voltage to 8.8 V (IPP = 5 A).
This device is capable of supporting high speed interfaces up to 10 Gbps, because of the extremely low IO capacitance.
This device features an industrial operating range of –40°C to +125°C.
The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers flow-through routing, requiring minimal modification to an existing layout.
The TPD4E02B04-Q1 is a passive integrated circuit that triggers when voltages are above VBRF or below VBRR. During ESD events, voltages as high as ±15 kV (air) can be directed to ground via the internal diode network. When the voltages on the protected line fall below the trigger levels of the TPD4E02B04-Q1 (usually within 10s of nano-seconds) the device reverts to passive.