SLVSBG0E August   2012  – April 2016 TPD4E101

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Peak Pulse Current (tp = 8/20 µs) 3 A
Peak Pulse Power ( tp = 8/20 µs) 40 W
Operating temperature –40 125 ºC
Storage temperature, Tstg –65 155 ºC

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
IEC 61000-4-2 Contact Discharge ±15000
IEC 61000-4-2 Air-gap Discharge ±15000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Operating Free-Air Temperature, TA –40 125 °C
Operating Voltage Pin 1,2,3,4 to GND –5.5 5.5 V

6.4 Thermal Information

THERMAL METRIC(1) TPD4E101 UNIT
DPW (X2SON)
4 PINS
RθJA Junction-to-ambient thermal resistance 291.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 224.2 °C/W
RθJB Junction-to-board thermal resistance 245.8 °C/W
ψJT Junction-to-top characterization parameter 31.4 °C/W
ψJB Junction-to-board characterization parameter 245.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 195.4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

TA = –40°C to +125°C (unless otherwise specified)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse stand-off voltage ±5.5 V
ILEAK Leakage current Pins = 5 V, GND = 0 V 100 nA
VClamp1,2 Clamp voltage from data pin to ground pin IPP = 1 A, 8/20 μs(1) 10 V
IPP = 3 A, 8/20 μs(1) 13 V
VClamp2,1 Clamp voltage from ground pin to data pin IPP = 1 A, 8/20 μs(1) 9 V
IPP = 3 A, 8/20 μs(1) 13 V
RDYN Dynamic resistance Pins to GND(2) 0.45 Ω
GND to Pins(2) 0.42 Ω
CIO I/O Capacitance VIO = 2.5 V 4.8 7 pF
VBRF Break-down voltage, pin 1, 2, 3, or 4 to GND IIO = 1 mA 6 V
VBRR Break-down voltage, GND to pin 1, 2, 3, or 4 IIO = 1 mA 6 V
(1) Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5.
(2) Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A.

6.6 Typical Characteristics

TPD4E101 G001_SLVSBE2.png Figure 1. IEC 61000-4-2 Clamping Voltage, 8-kV Contact
TPD4E101 G003_SLVSBE2.png Figure 3. TLP, tPW = 100 nS, tRISE = 10 nS, Data to GND
TPD4E101 G005_SLVSBE2.png Figure 5. IV Curve
TPD4E101 G007_SLVSBE2.png Figure 7. Surge Curves, GND to Data
TPD4E101 G009_SLVSBE2.png Figure 9. Insertion Loss
TPD4E101 G002_SLVSBE2.png Figure 2. IEC 61000-4-2 Clamping Voltage, –8-kV Contact
TPD4E101 G004_SLVSBE2.png Figure 4. TLP, tPW = 100 nS, tRISE = 10 nS, GND to Data
TPD4E101 G006_SLVSBE2.png Figure 6. Surge Curves, Data to GND
TPD4E101 G008_SLVSBE2.png Figure 8. Capacitance