SLVSBQ8E December   2012  – October 2024 TPD4E1B06

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Ultra Low Leakage Current 0.5 nA (Maximum)
      2. 6.3.2 Transient Protection for 4 I/O Lines
      3. 6.3.3 I/O Capacitance 0.7 pF (Typical)
      4. 6.3.4 Bi-Directional (ESD) Protection Diode Array
      5. 6.3.5 Low ESD Clamping Voltage
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Signal Range on IO1, IO2, IO3, and IO4 Pins
        2. 7.2.2.2 Operating Frequency
      3. 7.2.3 Application Curves
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
      2. 7.3.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.5 Electrical Characteristics

TA = 25°C
PARAMETER TEST CONDITION MIN TYP MAX UNIT
VRWM Reverse stand-off voltage –5.5 5.5 V
VCLAMP Clamp voltage with ESD strike, IO to GND IPP = 1 A, tp = 8/20 μSec, from I/O to GND or GND to I/O 10.9 V
IPP = 3 A, tp = 8/20 μSec, from I/O to GND or GND to I/O 14.5 V
RDYN Dynamic resistance ITLP = 10 A to 20 A, I/O to GND 1 Ω
ITLP = 10 A to 20 A, GND to I/O 0.8
CL Line capacitance f = 1 MHz, VBIAS = 2.5 V 0.7 0.95 pF
VBR Break-down voltage IIO = 1 mA, from I/O to GND or GND to I/O 7 9.5 V
ILEAK Leakage current VIO = 2.5 V 0.5 nA