SLVSBQ8E December   2012  – October 2024 TPD4E1B06

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Ultra Low Leakage Current 0.5 nA (Maximum)
      2. 6.3.2 Transient Protection for 4 I/O Lines
      3. 6.3.3 I/O Capacitance 0.7 pF (Typical)
      4. 6.3.4 Bi-Directional (ESD) Protection Diode Array
      5. 6.3.5 Low ESD Clamping Voltage
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Signal Range on IO1, IO2, IO3, and IO4 Pins
        2. 7.2.2.2 Operating Frequency
      3. 7.2.3 Application Curves
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
      2. 7.3.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.6 Typical Characteristics

TPD4E1B06 DC Voltage Sweep I-V CurveFigure 5-1 DC Voltage Sweep I-V Curve
TPD4E1B06 TLP Plot IO to GNDFigure 5-3 TLP Plot IO to GND
TPD4E1B06 +8 kV IEC WaveformFigure 5-5 +8 kV IEC Waveform
TPD4E1B06 Insertion LossFigure 5-7 Insertion Loss
TPD4E1B06 Surge Curve (tp = 8/20 μs), Pin IO to GNDFigure 5-2 Surge Curve (tp = 8/20 μs), Pin IO to GND
TPD4E1B06 Leakage vs TemperatureFigure 5-4 Leakage vs Temperature
TPD4E1B06 –8 kV IEC WaveformFigure 5-6 –8 kV IEC Waveform
TPD4E1B06 Capacitance vs VBIASFigure 5-8 Capacitance vs VBIAS