SLVSAU0G May 2011 – December 2015 TPD4S014
PRODUCTION DATA.
NOTE
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.
The TPD4S014 is a single-chip solution for USB charger port protection. This device offers low capacitance TVS type ESD clamps for the D+, D–, and standard capacitance for the ID pin. On the VBUS pin, this device can handle over voltage protection up to 28 V. The over voltage lockout feature ensures that if there is a fault condition at the VBUS line TPD4S014 is able to isolate the VBUS line and protect the internal circuitry from damage. In order to let the voltage stabilize before closing the switch there is a 17 ms turn on delay after VBUS crosses the UVLO threshold. This function acts as a de-glitch which prevents unnecessary switching if there is any ringing on the line during connection. Due to the body diode of the nFET switch, if there is a short to ground on VBUS the system is expected to limit the current to VBUSOUT.
Table 2 shows the design parameters.
DESIGN PARAMETERS | EXAMPLE VALUE |
---|---|
Signal range on VBUS | 3.3 V – 5.9 V |
Signal range on VBUSOUT | 3.9 V – 5.9 V |
Signal range on D+/D– and ID | 0 V – 5 V |
Drive EN low (enabled) | 0 V – 0.5 V |
Drive EN high (disabled) | 1 V – 6 V |
To begin the design process, some parameters must be decided upon. The designer needs to know the following:
Table 3 shows the design parameters.
DESIGN PARAMETERS | EXAMPLE VALUE |
---|---|
Signal range on VBUS | 3.3 V – 5.9 V |
Signal range on VBUSOUT | 3.9 V – 5.9 V |
Signal range on D+/D– and ID | 0 V – 5 V |
Drive EN low (enabled) | 0 V – 0.5 V |
Drive EN high (disabled) | 1 V – 6 V |
To begin the design process, some parameters must be decided upon. The designer needs to know the following:
Refer to Application Curves in the previous section.