DATA SHEET
TPD5E003 Five-Channel Space-Saving ESD Protection Device
1 Features
- Provides System-Level ESD Protection for Low-Voltage I/O Interface
- IEC 61000-4-2 Level 4
- ±15 kV (Contact Discharge)
- ±15 kV (Air-Gap Discharge)
- Typical I/O Capacitance 7 pF (VIO = 2.5 V)
- DC Breakdown Voltage: 6 V (Minimum)
- Low Leakage Current: 100 nA (Maximum)
- Low ESD Clamping Voltage
- Industrial Temperature Range: –40°C to 125°C
- IEC 61000-4-5 (Surge): 40 W (8/20-µs Pulse)
- Small, Easy-to-Route DPF Package
2 Applications
- End Equipment:
- Cell Phones
- Tablets
- Remote Controllers
- Wearables
- Interfaces:
- SIM Cards
- Audio Lines
- Push-Buttons
- General-Purpose Input and Output (GPIO)
3 Description
The TPD5E003 is a five-channel electrostatic discharge (ESD) transient voltage suppression (TVS) device. This device offers ±15-kV IEC contact and ±15-kV air-gap (level 4) ESD protection, and features five identical ESD clamping diodes that can be used to protect either five unidirectional (0 V to 5 V) I/O lines or four bidirectional (–5 V to 5 V) I/O lines. The compact DPF package is an industry standard and is convenient for component placement in
space-constrained applications. Typical application interfaces include SIM card interfaces, audio lines (mics, earphones, and speakerphones), SD interfaces, and keypads, or other buttons. Typical end equipment includes cell phones, tablets, remote controllers, and wearables.
Device Information(1)
| PART NUMBER | PACKAGE | BODY SIZE (NOM) |
|---|---|---|
| TPD5E003 | X2SON (6) | 1.00 mm × 1.00 mm |
- For all available packages, see the orderable addendum at the end of the data sheet.
Application Schematic
4 Revision History
Changes from A Revision (January 2013) to B Revision
- Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information sectionGo
Changes from * Revision (December 2012) to A Revision
5 Pin Configuration and Functions
DPF Package
6-Pin X2SON
Top View
Pin Functions
| PIN | I/O | DESCRIPTION | |
|---|---|---|---|
| NAME | NO. | ||
| I/O | 1 | I/O | ESD Protected channel |
| 3 | |||
| 4 | |||
| 5 | |||
| 6 | |||
| GND | 2 | — | Ground |
6 Specifications
6.1 Absolute Maximum Ratings
See (1)| MIN | MAX | UNIT | |
|---|---|---|---|
| I/O voltage tolerance | 5.5 | V | |
| Peak pulse current (tp = 8/20 μs), IPP | 3 | A | |
| Peak pulse power (tp = 8/20 μs), PPP | 40 | W | |
| Storage temperature, Tstg | –55 | 150 | °C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings: JEDEC
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
| Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 ESD Ratings: IEC 61000-4-2
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | IEC 61000-4-2 contact discharge | ±15000 | V |
| IEC 61000-4-2 air-gap discharge | ±15000 | |||
6.4 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| Operating free-air temperature, TA | –40 | 125 | °C | ||
| Operating voltage | Pin 1, 3, 4, 5, 6 to Pin 2 | 0 | 5 | V | |
6.5 Thermal Information
| THERMAL METRIC(1) | TPD5E003 | UNIT | |
|---|---|---|---|
| DPF (X2SON) | |||
| 6 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 246.7 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 87.8 | °C/W |
| RθJB | Junction-to-board thermal resistance | 187.1 | °C/W |
| ψJT | Junction-to-top characterization parameter | 2.6 | °C/W |
| ψJB | Junction-to-board characterization parameter | 198 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 32 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
6.6 Electrical Characteristics
| PARAMETER | TEST CONDITION | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | II = 0.1 µA | 5 | V | ||
| ILEAK | Leakage Current | Pin 1, 3, 4, 5, or 6 = 5 V, Pin 2 = 0 V | 10 | 100 | nA | |
| VCLAMP | Clamp voltage with ESD strike | IPP = 6 A, TLP, Dx pin to GND, TA = 25 °C | 13 | 15.6 | V | |
| IPP = 10 A, TLP, Dx pin to GND, TA = 25 °C | 16.3 | 19.5 | V | |||
| RDYN | Dynamic resistance | ITLP = 6 A to 10 A, Dx pin to GND, TA = 25 °C | 0.8 | 1 | Ω | |
| ITLP = 6 A to 10 A, GND to Dx pin, TA = 25 °C | 0.3 | 0.4 | Ω | |||
| CIO | IO capacitance | VIO = 2.5 V, 1 MHz, TA = 25 °C | 5.6 | 7 | 8.4 | pF |
| VIO = 0 V, 1 MHz, TA = 25 °C | 8 | 10 | 12 | pF | ||
| VBR | Break-down voltage | IIO = 1 mA | 6 | 7 | 8.5 | V |
6.7 Typical Characteristics
Figure 1. Surge Plot (tp = 8/20 μs), Pin Dx to GND
Figure 3. Capacitance vs DC Bias Voltage
Figure 5. DC SWEEP V-I Curve
Figure 7. IEC 61000-4-2 Clamping Voltage, –8-kV Contact
Figure 2. Surge Plot (tp = 8/20 μs), Pin GND to Dx
Figure 4. 30 A TLP Plot
Figure 6. IEC 61000-4-2 Clamping Voltage, 8-kV Contact
