DATA SHEET
TPD6E001 Low-Capacitance 6-Channel ESD-Protection for High-Speed Data Interfaces
1 Features
- IEC 61000-4-2 Level 4 ESD Protection
- ±8-kV IEC 61000-4-2 Contact Discharge
- ±15-kV IEC 61000-4-2 Air-Gap Discharge
- I/O Capacitance: 1.5-pF (Typical)
- Low Leakage Current: 1-nA (Maximum)
- Low Supply Current: 1-nA (Typical)
- 0.9-V to 5.5-V Supply-Voltage Range
- Space-Saving RSE and RSF Package Options
- Alternate 2-, 3-, 4-Channel Options Available: TPD2E2U06, TPD3E001, and TPD4E1U06
2 Applications
- End Equipments
- Portable Data Terminal
- Industrial Monitor
- IP Camera
- Blood Glucose Meters
- Interfaces
- SDIO
- Precision Analog Interface
- SVGA Connections
- USB 2.0
3 Description
The TPD6E001 is a six-channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode array. The TPD6E001 is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4). This device has a 1.5-pF IO capacitance per channel, making it ideal for use in high-speed data IO interfaces. The ultra low leakage current
(<1 nA max) is suitable for precision analog measurements in applications like glucose meters and heart rate monitors.
The TPD6E001 is available in space saving RSE (UQFN) and RSF (WQFN) packages and is specified for –40°C to 85°C operation. Also see TPD2E2U06, TPD3E001, and TPD4E1U06 which are 2, 3, and 4 channel ESD protection options, respectively, for ESD protection diode arrays with a different number of channels. The TPD2E2U06 provides a higher level of IEC ESD protection, when compared to the TPDxE001 family, and removes the need for an input capacitor. The TPD4E1U06 removes the need for an input capacitor, provides higher IEC ESD protection, and provides lower capacitance, when compared to the TPDxE001 family.
Device Information(1)
| PART NUMBER | PACKAGE | BODY SIZE (NOM) |
|---|---|---|
| TPD6E001 | UQFN (10) | 1.50 mm × 2.00 mm |
| WQFN (12) | 4.00 mm × 4.00 mm |
- For all available packages, see the orderable addendum at the end of the datasheet.
Application Schematic
4 Revision History
Changes from C Revision (April 2007) to D Revision
- Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go
5 Pin Configuration and Functions
RSE Package
10-Pin UQFN
Top View
N.C.- Not internally connected
RSF Package
12-Pin WQFN
Top View
N.C.- Not internally connected
Pin Functions
| PIN | TYPE | DESCRIPTION | ||
|---|---|---|---|---|
| NAME | RSE | RSF | ||
| GND | 5 | 5 | GND | Ground |
| IOx | 1, 2, 3, 6, 7, 8 |
1, 2, 3, 7, 8, 9 |
I/O | ESD-protected channel |
| N.C. | 4, 9 | 4, 6, 10, 12 | — | Not internally connected |
| VCC | 10 | 11 | Power | Power-supply input. Bypass VCC to GND with a 0.1-μF ceramic capacitor. |
| EP | – | EP | GND | Exposed pad. Connect to GND. |
6 Specifications
6.1 Absolute Maximum Ratings(1)
over operating free-air temperature range (unless otherwise noted)| MIN | MAX | UNIT | ||||
|---|---|---|---|---|---|---|
| VCC | –0.3 | 7 | V | |||
| VI/O | –0.3 | VCC + 0.3 | V | |||
| TJ | Junction temperature | 150 | °C | |||
| Bump temperature (soldering) | Infrared (15 s) | 220 | °C | |||
| Vapor phase (60 s) | 215 | °C | ||||
| Lead temperature (soldering, 10 s) | 300 | °C | ||||
| Tstg | Storage temperature | –65 | 150 | °C | ||
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±15000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 | V | ||
| IEC 61000-4-2 Contact Discharge | ±8000 | V | ||
| IEC 61000-4-2 Air-Gap Discharge | ±15000 | V | ||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| TA Operating free-air temperature range | -40 | 85 | °C | ||
| Operating Voltage | VCC Pin | 0.9 | 5.5 | V | |
| IOx Pins | 0 | VCC | |||
6.4 Thermal Information
| THERMAL METRIC(1) | TPD6E001 | UNIT | ||
|---|---|---|---|---|
| RSE (UQFN) | RSF (WQFN) | |||
| 10 PINS | 12 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 235.0 | 75.8 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 140.9 | 74.6 | °C/W |
| RθJB | Junction-to-board thermal resistance | 154.6 | 51.3 | °C/W |
| ψJT | Junction-to-top characterization parameter | 21.8 | 5.9 | °C/W |
| ψJB | Junction-to-board characterization parameter | 154.6 | 51.4 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | 31.4 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
6.5 Electrical Characteristics
VCC = 5 V ± 10%, TA = -40°C to 85°C (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VCC | Supply voltage | 0.9 | 5.5 | V | |||
| ICC | Supply current | 1 | 100 | nA | |||
| VF | Diode forward voltage | IF = 10 mA | 0.65 | 0.95 | V | ||
| VBR | Breakdown voltage | IBR = 10 mA | 11 | V | |||
| VC | Channel clamp voltage(2) | TA = 25°C, ±15-kV HBM, IF = 10 A |
Positive transients | VCC + 25 | V | ||
| Negative transients | –25 | V | |||||
| TA = 25°C, ±8-kV Contact Discharge (IEC 61000-4-2), IF = 24 A |
Positive transients | VCC + 60 | V | ||||
| Negative transients | –60 | V | |||||
| TA = 25°C, ±15-kV Air-Gap Discharge (IEC 61000-4-2), IF = 45 A |
Positive transients | VCC + 100 | V | ||||
| Negative transients | –100 | V | |||||
| Ii/o | Channel leakage current | Vi/o = GND to VCC | ±1 | nA | |||
| Ci/o | Channel input capacitance | VCC = 5 V, Bias of VCC/2 | 1.5 | pF | |||
(1) Typical values are at VCC = 5 V and TA = 25°C.
(2) Channel clamp voltage is not production tested.
6.6 Typical Characteristics
Figure 1. IO Capacitance vs IO Voltage(VCC = 5 V)
Figure 2. IO Leakage Current vs Temperature(VCC = 5.5 V)
