SLLS685D July   2006  – September 2015 TPD6E001

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC –0.3 7 V
VI/O –0.3 VCC + 0.3 V
TJ Junction temperature 150 °C
Bump temperature (soldering) Infrared (15 s) 220 °C
Vapor phase (60 s) 215 °C
Lead temperature (soldering, 10 s) 300 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±15000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 V
IEC 61000-4-2 Contact Discharge ±8000 V
IEC 61000-4-2 Air-Gap Discharge ±15000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
TA Operating free-air temperature range -40 85 °C
Operating Voltage VCC Pin 0.9 5.5 V
IOx Pins 0 VCC

6.4 Thermal Information

THERMAL METRIC(1) TPD6E001 UNIT
RSE (UQFN) RSF (WQFN)
10 PINS 12 PINS
RθJA Junction-to-ambient thermal resistance 235.0 75.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 140.9 74.6 °C/W
RθJB Junction-to-board thermal resistance 154.6 51.3 °C/W
ψJT Junction-to-top characterization parameter 21.8 5.9 °C/W
ψJB Junction-to-board characterization parameter 154.6 51.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A 31.4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

VCC = 5 V ± 10%, TA = -40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VCC Supply voltage 0.9 5.5 V
ICC Supply current 1 100 nA
VF Diode forward voltage IF = 10 mA 0.65 0.95 V
VBR Breakdown voltage IBR = 10 mA 11 V
VC Channel clamp voltage(2) TA = 25°C, ±15-kV HBM,
IF = 10 A		 Positive transients VCC + 25 V
Negative transients –25 V
TA = 25°C,
±8-kV Contact Discharge
(IEC 61000-4-2), IF = 24 A		 Positive transients VCC + 60 V
Negative transients –60 V
TA = 25°C,
±15-kV Air-Gap Discharge
(IEC 61000-4-2), IF = 45 A		 Positive transients VCC + 100 V
Negative transients –100 V
Ii/o Channel leakage current Vi/o = GND to VCC ±1 nA
Ci/o Channel input capacitance VCC = 5 V, Bias of VCC/2 1.5 pF
(1) Typical values are at VCC = 5 V and TA = 25°C.
(2) Channel clamp voltage is not production tested.

6.6 Typical Characteristics

TPD6E001 iocap_iovolt_lls682.gif Figure 1. IO Capacitance vs IO Voltage
(VCC = 5 V)
TPD6E001 leak_ta_lls682.gif Figure 2. IO Leakage Current vs Temperature
(VCC = 5.5 V)