SLVSDD6B September   2016  – November 2016 TPD8S300

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings—JEDEC Specification
    3. 7.3 ESD Ratings—IEC Specification
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Timing Requirements
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 4-Channels of Short-to-VBUS Overvoltage Protection (CC1, CC2, SBU1, SBU2 Pins): 24-VDC Tolerant
      2. 8.3.2 8-Channels of IEC 61000-4-2 ESD Protection (CC1, CC2, SBU1, SBU2, DP_T, DM_T, DP_B, DM_B Pins)
      3. 8.3.3 CC1, CC2 Overvoltage Protection FETs 600 mA Capable for Passing VCONN Power
      4. 8.3.4 CC Dead Battery Resistors Integrated for Handling the Dead Battery Use Case in Mobile Devices
      5. 8.3.5 3-mm × 3-mm WQFN Package
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 VBIAS Capacitor Selection
        2. 9.2.2.2 Dead Battery Operation
        3. 9.2.2.3 CC Line Capacitance
        4. 9.2.2.4 Additional ESD Protection on CC and SBU Lines
        5. 9.2.2.5 FLT Pin Operation
        6. 9.2.2.6 How to Connect Unused Pins
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VI Input voltage VPWR –0.3 4 V
RPD_G1, RPD_G2 –0.3 24 V
VO Output voltage FLT –0.3 6 V
VBIAS –0.3 24 V
VIO I/O voltage D1, D2, D3, D4 –0.3 6 V
CC1, CC2, SBU1, SBU2 –0.3 6 V
C_CC1, C_CC2, C_SBU1, C_SBU2 –0.3 24 V
TA Operating free air temperature –40 85 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings—JEDEC Specification

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2000 V may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±500 V may actually have higher performance.

7.3 ESD Ratings—IEC Specification

VALUE UNIT
V(ESD) Electrostatic discharge(1) IEC 61000-4-2, C_CC1, C_CC2, D1, D2, D3, D4 Contact discharge ±8000 V
Air-gap discharge ±15000
IEC 61000-4-2, C_SBU1, C_SBU2 Contact discharge ±6000
Air-gap discharge ±15000
(1) Tested on the TPD8S300 EVM connected to the TPS65982 EVM.

7.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VI Input voltage VPWR 2.7 3.3 3.6 V
RPD_G1, RPD_G2 0 5.5 V
VO Output voltage FLT pull-up resistor power rail 2.7 5.5 V
VIO I/O voltage D1, D2, D3, D4 –0.3 5.5 V
CC1, CC2, C_CC1, C_CC2 0 5.5 V
SBU1, SBU2, C_SBU1, C_SBU2 0 4.3 V
IVCONN VCONN current Current flowing into CC1/2 and flowing out of C_CC1/2, VCCx – VC_CCx ≤ 250 mV 600 mA
IVCONN VCONN current Current flowing into CC1/2 and flowing out of C_CC1/2, TJ ≤ 105°C 1.25 A
External components(1) FLT pull-up resistance 1.7 300 kΩ
VBIAS capacitance(2) 0.1 µF
VPWR capacitance 0.3 1 µF
(1) For recommended values for capacitors and resistors, the typical values assume a component placed on the board near the pin. Minimum and maximum values listed are inclusive of manufacturing tolerances, voltage derating, board capacitance, and temperature variation. The effective value presented must be within the minimum and maximums listed in the table.
(2) The VBIAS pin requires a minimum 35-VDC rated capacitor. A 50-VDC rated capacitor is recommended to reduce capacitance derating. See the VBIAS Capacitor Selection section for more information on selecting the VBIAS capacitor.

7.5 Thermal Information

THERMAL METRIC(1) TPD8S300 UNIT
RUK (WQFN)
20 PINS
RθJA Junction-to-ambient thermal resistance 45.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 48.8 °C/W
RθJB Junction-to-board thermal resistance 17.1 °C/W
ψJT Junction-to-top characterization parameter 0.6 °C/W
ψJB Junction-to-board characterization parameter 17.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CC OVP Switches
RON On resistance of CC OVP FETs, TJ ≤ 85°C CCx = 5.5 V 278 392 mΩ
On resistance of CC OVP FETs, TJ ≤ 105°C CCx = 5.5 V 278 415 mΩ
RONFLAT On resistance flatness Sweep CCx voltage between 0 V and 1.2 V 5 mΩ
CON_CC Equivalent on capacitance Capacitance from C_CCx or CCx to GND when device is powered. VC_CCx/VCCx = 0 V to 1.2 V , f = 400 kHz 60 74 120 pF
RD_DB Dead battery pull-down resistance (only present when device is unpowered). Effective resistance of RD and FET in series V_C_CCx = 2.6 V 4.1 5.1 6.1 kΩ
VTH_DB Threshold voltage of the pulldown FET in series with RD during dead battery I_CC = 80 µA 0.5 0.9 1.2 V
VOVPCC OVP threshold on CC pins Place 5.5 V on C_CCx. Step up C_CCx until the FLT pin is asserted 5.75 6 6.2 V
VOVPCC_HYS Hysteresis on CC OVP Place 6.5 V on C_CCx. Step down the voltage on C_CCx until the FLT pin is deasserted. Measure difference between rising and falling OVP threshold for CC 50 mV
BWON On bandwidth single ended (–3 dB) Measure the –3-dB bandwidth from C_CCx to CCx. Single ended measurement, 50-Ω system. Vcm = 0.1 V to 1.2 V 100 MHz
VSTBUS_CC Short-to-VBUS tolerance on the CC pins Hot-Plug C_CCx with a 1 meter USB Type C Cable, place a 30-Ω load on CCx 24 V
VSTBUS_CC_CLAMP Short-to-VBUS system-side clamping voltage on the CC pins (CCx) Hot-Plug C_CCx with a 1 meter USB Type C Cable. Hot-Plug voltage C_CCx = 24 V. VPWR = 3.3 V. Place a 30-Ω load on CCx 8 V
SBU OVP Switches
RON On resistance of SBU OVP FETs SBUx = 3.6 V. –40°C ≤ TJ ≤ +85°C 4 6.5 Ω
RONFLAT On resistance flatness Sweep SBUx voltage between 0 V and 3.6 V. –40°C ≤ TJ ≤ +85°C 0.7 1.5 Ω
CON_SBU Equivalent on capacitance Capacitance from SBUx or C_SBUx to GND when device is powered. Measure at VC_SBUx/VSBUx = 0.3 V to 3.6 V 6 pF
VOVPSBU OVP threshold on SBU pins Place 3.6 V on C_SBUx. Step up C_SBUx until the FLT pin is asserted 4.35 4.5 4.7 V
VOVPSBU_HYS Hysteresis on SBU OVP Place 5 V on C_CCx. Step down the voltage on C_CCx until the FLT pin is deasserted. Measure difference between rising and falling OVP threshold for C_SBUx 50 mV
BWON On bandwidth single ended (–3 dB) Measure the –3-dB bandwidth from C_SBUx to SBUx. Single ended measurement, 50-Ω system. Vcm = 0.1 V to 3.6 V 1000 MHz
XTALK Crosstalk Measure crosstalk at f = 1 MHz from SBU1 to C_SBU2 or SBU2 to C_SBU1. Vcm1 = 3.6 V, Vcm2 = 0.3 V. Be sure to terminate open sides to 50 Ω –80 dB
VSTBUS_SBU Short-to-VBUS tolerance on the SBU pins Hot-Plug C_SBUx with a 1 meter USB Type C Cable. Put a 150-nF capacitor in series with a 40-Ω resistor to GND on SBUx 24 V
VSTBUS_SBU_CLAMP Short-to-VBUS system-side clamping voltage on the SBU pins (SBUx) Hot-Plug C_SBUx with a 1 meter USB Type C Cable. Hot-Plug voltage C_SBUx = 24 V. VPWR = 3.3 V. Put a 100-nF capacitor in series with a 40-Ω resistor to GND on SBUx 8 V
Power Supply and Leakage Currents
VPWR_UVLO VPWR under voltage lockout Place 1 V on VPWR and raise voltage until SBU or CC FETs turnon 2.1 2.3 2.5 V
VPWR_UVLO_HYS VPWR UVLO hysteresis Place 3 V on VPWR and lower voltage until SBU or CC FETs turnoff; measure difference between rising and falling UVLO to calculate hysteresis 100 150 200 mV
IVPWR VPWR supply current VPWR = 3.3 V (typical), VPWR = 3.6 V (maximum). –40°C ≤ TJ ≤ +85°C. 90 120 µA
ICC_LEAK Leakage current for CC pins when device is powered VPWR = 3.3 V, VC_CCx = 3.6 V, CCx pins are floating, measure leakage into C_CCx pins. Result must be same if CCx side is biased and C_CCx is left floating. 5 µA
ISBU_LEAK Leakage current for SBU pins when device is powered VPWR = 3.3 V, VC_SBUx = 3.6 V, SBUx pins are floating, measure leakge into C_SBUx pins. Result must be same if SBUx side is biased and C_SBUx is left floating. –40°C ≤ TJ ≤ 85°C. 3 µA
IC_CC_LEAK_OVP Leakage current for CC pins when device is in OVP VPWR = 0 V or 3.3 V, VC_CCx = 24 V, CCx pins are set to 0 V, measure leakage into C_CCx pins 1200 µA
IC_SBU_LEAK_OVP Leakage current for SBU pins when device is in OVP VPWR = 0 V or 3.3 V, VC_SBUx = 24 V, SBUx pins are set to 0 V, measure leakage into C_SBUx pins 400 µA
ICC_LEAK_OVP Leakage current for CC pins when device is in OVP VPWR = 0 V or 3.3 V, VC_CCx = 24 V, CCx pins are set to 0 V, measure leakage out of CCx pins 30 µA
ISBU_LEAK_OVP Leakage current for SBU pins when device is in OVP VPWR = 0 V or 3.3 V, VC_SBUx = 24 V, SBUx pins are set to 0 V, measure leakage out of SBUx pins –1 1 µA
IDx_LEAK Leakage current for Dx pins V_Dx = 3.6 V, measure leakage into Dx pins 1 µA
FLT Pin
VOL Low-level output voltage IOL = 3 mA. Measure the voltage at the FLT pin 0.4 V
Over Temperature Protection
TSD_RISING The rising over-temperature protection shutdown threshold 150 175 °C
TSD_FALLING The falling over-temperature protection shutdown threshold 130 140 °C
TSD_HYST The over-temperature protection shutdown threshold hysteresis 35 °C
Dx ESD Protection
VRWM_POS Reverse stand-off voltage from Dx to GND Dx to GND. IDX ≤ 1 µA 5.5 V
VRWM_NEG Reverse stand-off voltage from GND to Dx GND to Dx 0 V
VBR_POS Break-down voltage from Dx to GND Dx to GND. IBR = 1 mA 7 V
VBR_NEG Break-down voltage from GND to Dx GND to Dx. IBR = 8 mA 0.6 V
CIO Dx to GND or GND to Dx f = 1 MHz, VIO = 2.5 V 1.7 pF
ΔCIO Differential capacitance between two Dx pins f = 1 MHz, VIO = 2.5 V 0.02 pF
RDYN Dynamic on-resistance Dx IEC clamps Dx to GND or GND to Dx 0.4 Ω

7.7 Timing Requirements

MIN NOM MAX UNIT
Power-On and Off Timings
tON Time from crossing rising VPWR UVLO until CC and SBU OVP FETs are on 3.5 ms
dVPWR_OFF/dt Minimum slew rate allowed to guarantee CC and SBU FETs turnoff during a power off –0.5 V/µs
Over Voltage Protection
tOVP_RESPONSE_CC OVP response time on the CC pins. Time from OVP asserted until OVP FETs turnoff 70 ns
tOVP_RESPONSE_SBU OVP response time on the SBU pins. Time from OVP asserted until OVP FETs turnoff 80 ns
tOVP_RECOVERY_CC_1 OVP recovery time on the CC pins. Once an OVP has occurred, the minimum time duration until the CC FETs turn back on. OVP must be removed for CC FETs to turn back on 21 29 39 ms
tOVP_RECOVERY_SBU_1 OVP recovery time on the SBU pins. Once an OVP has occurred, the minimum time duration until the SBU FETs turn back on. OVP must be removed for SBU FETs to turn back on 21 29 39 ms
tOVP_RECOVERY_CC_2 OVP recovery time on the CC pins. Time from OVP removal until CC FET turns back on, if device has been in OVP > 40 ms 0.5 ms
tOVP_RECOVERY_SBU_2 OVP recovery time on the SBU pins. Time from OVP removal until SBU FET turns back on, if device has been in OVP > 40 ms 0.5 ms
tOVP_FLT_ASSERTION Time from OVP asserted to FLT assertion 20 µs
tOVP_FLT_DEASSERTION Time from CC FET turnon after an OVP to FLT deassertion 5 ms

7.8 Typical Characteristics

TPD8S300 D003_TPD8S300_Typ_Char.gif
Figure 1. SBU S21 BW
TPD8S300 D005_TPD8S300_Typ_Char.gif
Figure 3. SBU Short-to-VBUS 20 V
TPD8S300 D008_SLVSDD6.gif
Figure 5. SBU RON Flatness
TPD8S300 D010_TPD8S300_Typ_Char.gif
Figure 7. SBU IEC 61000-4-2 –4-kV Response Waveform
TPD8S300 D012_TPD8S300_Typ_Char.gif
Figure 9. C_SBU OVP Leakage Current vs Ambient Temperature at 5.5 V and 24 V
TPD8S300 D014_TPD8S300_Typ_Char.gif
Figure 11. SBU FET Turnon Timing
TPD8S300 D016_TPD8S300_Typ_Char.gif
Figure 13. SBU IV Curve
TPD8S300 D017_TPD8S300_Typ_Char.gif
Figure 15. CC Short-to-VBUS 20 V
TPD8S300 D019_TPD8S300_Typ_Char.gif
Figure 17. CC IEC 61000-4-2 8-kV Response Waveform
TPD8S300 D021_TPD8S300_Typ_Char.gif
Figure 19. C_CC Path Leakage Current vs Ambient Temperature at C_CC = 5.5 V
TPD8S300 D023_TPD8S300_Typ_Char.gif
Figure 21. CC OVP Leakage Current vs Ambient Temperature at C_CC = 24 V
TPD8S300 D025_TPD8S300_Typ_Char.gif
Figure 23. C_CC TLP Curve Unpowered
TPD8S300 D027_TPD8S300_Typ_Char.gif
Figure 25. VPWR Supply Leakage vs Ambient Temperature at 3.6 V
TPD8S300 D029_TPD8S300_Typ_Char.gif
Figure 27. Dx IV Curve
TPD8S300 D004_TPD8S300_Typ_Char.gif
Figure 2. SBU Crosstalk
TPD8S300 D006_TPD8S300_Typ_Char.gif
Figure 4. SBU Short-to-VBUS 5 V
TPD8S300 D009_TPD8S300_Typ_Char.gif
Figure 6. SBU IEC 61000-4-2 4-kV Response Waveform
TPD8S300 D011_TPD8S300_Typ_Char.gif
Figure 8. SBU Path Leakage Current vs Ambient Temperature at 3.6 V
TPD8S300 D013_TPD8S300_Typ_Char.gif
Figure 10. SBU OVP Leakage Current vs Ambient Temperature at 5.5 V and 24 V
TPD8S300 D015_TPD8S300_Typ_Char.gif
Figure 12. C_SBU TLP Curve Unpowered
TPD8S300 D001_TPD8S300_Typ_Char.gif
Figure 14. CC S21 BW
TPD8S300 D018_SLVSDD6.gif
Figure 16. CC RON Flatness
TPD8S300 D020_TPD8S300_Typ_Char.gif
Figure 18. CC IEC 61000-4-2 –8-kV Response Waveform
TPD8S300 D022_TPD8S300_Typ_Char.gif
Figure 20. C_CC OVP Leakage Current vs Ambient Temperature at C_CC = 24 V
TPD8S300 D024_TPD8S300_Typ_Char.gif
Figure 22. CC FET Turnon Timing
TPD8S300 D026_TPD8S300_Typ_Char.gif
Figure 24. C_CC IV Curve
TPD8S300 D028_TPD8S300_Typ_Char.gif
Figure 26. Dx Leakage Current vs Ambient Temperature at 0.4 V and 3.6 V
TPD8S300 D030_TPD8S300_Typ_Char.gif
Figure 28. Dx TLP Curve