SLVSEL9 June 2018 TPD8S300A
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
CC OVP SWITCHES | ||||||
RON | On resistance of CC OVP FETs, TJ ≤ 85°C | CCx = 5.5 V | 278 | 392 | mΩ | |
On resistance of CC OVP FETs, TJ ≤ 105°C | CCx = 5.5 V | 278 | 415 | mΩ | ||
RON(FLAT) | On resistance flatness | Sweep CCx voltage between 0 V and 1.2 V | 5 | mΩ | ||
CON_CC | Equivalent on capacitance | Capacitance from C_CCx or CCx to GND when device is powered. VC_CCx/VCCx = 0 V to 1.2 V, f = 400 kHz | 60 | 74 | 120 | pF |
RD | Dead battery pull-down resistance (only present when device is unpowered). Effective resistance of RD and FET in series | V_C_CCx = 2.6 V | 4.1 | 5.1 | 6.1 | kΩ |
VTH_DB | Threshold voltage of the pulldown FET in series with RD during dead battery | I_CC = 80 µA | 0.5 | 0.9 | 1.2 | V |
VOVPCC | OVP threshold on CC pins | Place 5.5 V on C_CCx. Step up C_CCx until the FLT pin is asserted | 5.75 | 6 | 6.2 | V |
VOVPCC_HYS | Hysteresis on CC OVP | Place 6.5 V on C_CCx. Step down the voltage on C_CCx until the FLT pin is deasserted. Measure difference between rising and falling OVP threshold for C_CCx | 50 | mV | ||
BWON | On bandwidth single ended (–3 dB) | Measure the –3-dB bandwidth from C_CCx to CCx. Single ended measurement, 50-Ω system. Vcm = 0.1 V to 1.2 V | 100 | MHz | ||
VSTBUS_CC | Short-to-VBUS tolerance on the CC pins | Hot-Plug C_CCx with a 1 meter USB Type C Cable, place a 30-Ω load on CCx | 24 | V | ||
VSTBUS_CC_CLAMP | Short-to-VBUS system-side clamping voltage on the CC pins (CCx) | Hot-Plug C_CCx with a 1 meter USB Type C Cable. Hot-Plug voltage C_CCx = 24 V. VPWR = 3.3 V. Place a 30-Ω load on CCx | 8 | V | ||
SBU OVP SWITCHES | ||||||
RON | On resistance of SBU OVP FETs | SBUx = 3.6 V. –40°C ≤ TJ ≤ +85°C | 4 | 6.5 | Ω | |
RON(FLAT) | On resistance flatness | Sweep SBUx voltage between 0 V and 3.6 V. –40°C ≤ TJ ≤ +85°C | 0.7 | 1.5 | Ω | |
CON_SBU | Equivalent on capacitance | Capacitance from SBUx or C_SBUx to GND when device is powered. Measure at VC_SBUx/VSBUx = 0.3 V to 3.6 V | 6 | pF | ||
VOVPSBU | OVP threshold on SBU pins | Place 3.6 V on C_SBUx. Step up C_SBUx until the FLT pin is asserted | 4.35 | 4.5 | 4.7 | V |
VOVPSBU_HYS | Hysteresis on SBU OVP | Place 5 V on C_CCx. Step down the voltage on C_CCx until the FLT pin is deasserted. Measure difference between rising and falling OVP threshold for C_SBUx | 50 | mV | ||
BWON | On bandwidth single ended (–3 dB) | Measure the –3-dB bandwidth from C_SBUx to SBUx. Single ended measurement, 50-Ω system. Vcm = 0.1 V to 3.6 V | 1000 | MHz | ||
XTALK | Crosstalk | Measure crosstalk at f = 1 MHz from SBU1 to C_SBU2 or SBU2 to C_SBU1. Vcm1 = 3.6 V, Vcm2 = 0.3 V. Be sure to terminate open sides to 50 Ω | –80 | dB | ||
VSTBUS_SBU | Short-to-VBUS tolerance on the SBU pins | Hot-Plug C_SBUx with a 1 meter USB Type C Cable. Put a 100-nF capacitor in series with a 40-Ω resistor to GND on SBUx | 24 | V | ||
VSTBUS_SBU_CLAMP | Short-to-VBUS system-side clamping voltage on the SBU pins (SBUx) | Hot-Plug C_SBUx with a 1 meter USB Type C Cable. Hot-Plug voltage C_SBUx = 24 V. VPWR = 3.3 V. Put a 150-nF capacitor in series with a 40-Ω resistor to GND on SBUx | 8 | V | ||
POWER SUPPLY and LEAKAGE CURRENTS | ||||||
VPWR_UVLO | VPWR under voltage lockout | Place 1 V on VPWR and raise voltage until SBU or CC FETs turnon | 2.1 | 2.3 | 2.5 | V |
VPWR_UVLO_HYS | VPWR UVLO hysteresis | Place 3 V on VPWR and lower voltage until SBU or CC FETs turnoff; measure difference between rising and falling UVLO to calculate hysteresis | 100 | 150 | 200 | mV |
IVPWR | VPWR supply current | VPWR = 3.3 V (typical), VPWR = 3.6 V (maximum). –40°C ≤ TJ ≤ +85°C. | 90 | 120 | µA | |
ICC_LEAK | Leakage current for CC pins when device is powered | VPWR = 3.3 V, VC_CCx = 3.6 V, CCx pins are floating, measure leakage into C_CCx pins. Result must be same if CCx side is biased and C_CCx is left floating | 5 | µA | ||
ISBU_LEAK | Leakage current for SBU pins when device is powered | VPWR = 3.3 V, VC_SBUx = 3.6 V, SBUx pins are floating, measure leakge into C_SBUx pins. Result must be same if SBUx side is biased and C_SBUx is left floating. –40°C ≤ TJ ≤ +85°C | 3 | µA | ||
IC_CC_LEAK_OVP | Leakage current for CC pins when device is in OVP | VPWR = 0 V or 3.3 V, VC_CCx = 24 V, CCx pins are set to 0 V, measure leakage into C_CCx pins | 1200 | µA | ||
IC_SBU_LEAK_OVP | Leakage current for SBU pins when device is in OVP | VPWR = 0 V or 3.3 V, VC_SBUx = 24 V, SBUx pins are set to 0 V, measure leakage into C_SBUx pins | 400 | µA | ||
ICC_LEAK_OVP | Leakage current for CC pins when device is in OVP | VPWR = 0 V or 3.3 V, VC_CCx = 24 V, CCx pins are set to 0 V, measure leakage out of CCx pins | 30 | µA | ||
ISBU_LEAK_OVP | Leakage current for SBU pins when device is in OVP | VPWR = 0 V or 3.3 V, VC_SBUx = 24 V, SBUx pins are set to 0 V, measure leakage out of SBUx pins | –1 | 1 | µA | |
IDx_LEAK | Leakage current for Dx pins | V_Dx = 3.6 V, measure leakage into Dx pins | 1 | µA | ||
FLT PIN | ||||||
VOL | Low-level output voltage | IOL = 3 mA. Measure the voltage at the FLT pin | 0.4 | V | ||
OVER TEMPERATURE PROTECTION | ||||||
TSD_RISING | The rising over-temperature protection shutdown threshold | 150 | 175 | °C | ||
TSD_FALLING | The falling over-temperature protection shutdown threshold | 130 | 140 | °C | ||
TSD_HYST | The over-temperature protection shutdown threshold hysteresis | 35 | °C | |||
Dx ESD PROTECTION | ||||||
VRWM_POS | Reverse stand-off voltage from Dx to GND | Dx to GND. IDX ≤ 1 µA | 5.5 | V | ||
VRWM_NEG | Reverse stand-off voltage from GND to Dx | GND to Dx | 0 | V | ||
VBR_POS | Break-down voltage from Dx to GND | Dx to GND. IBR = 1 mA | 7 | V | ||
VBR_NEG | Break-down voltage from GND to Dx | GND to Dx. IBR = 8 mA | 0.6 | V | ||
CIO | Dx to GND or GND to Dx | f = 1 MHz, VIO = 2.5 V | 1.7 | pF | ||
ΔCIO | Differential capacitance between two Dx pins | f = 1 MHz, VIO = 2.5 V | 0.02 | pF | ||
RDYN | Dynamic on-resistance Dx IEC clamps | Dx to GND or GND to Dx | 0.4 | Ω |