SLIS170 December 2015 TPIC2010
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
5-V supply voltage A5V, P5V | 6 | V | ||
Spindle output peak voltage(4) | 7 | V | ||
Input/output voltage | –0.3 | VCC + 0.3 V | V | |
Spindle output current | 1.0 | A | ||
Spindle output peak current (PW ≦ 2 ms, Duty ≦ 30%) | 2.5 | A | ||
Sled output peak current | 0.8 | A | ||
Focus/tilt/tracking driver output peak current | 1.5 | A | ||
Load driver output peak current | 0.8 | A | ||
Power dissipation(2) | 1344 | mW | ||
Operating temperature | –20 | 75 | °C | |
Tstg | Storage temperature | –50 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
A5V | Operating supply voltage (apply for A5V) | 4.5 | 5.0 | 5.5 | V |
P5V | Driver 5V supply voltage (apply for P5V) | A5V – 0.2 | A5V | A5V + 0.2 | V |
CSWIV | CSWI input voltage (apply for P5V) | A5V – 0.2 | A5V | A5V + 0.2 | V |
VSIOV | SIOV voltage | 3.0 | 3.3 | 3.6 | V |
VSIFH | SIMO, SSZ, SCLK pin “H” level input voltage range | 2.2 | SIOV + 0.2 | V | |
VSIFL | SIMO, SSZ, SCLK pin “L” level input voltage range | –0.2 | 0.8 | V | |
VIHB | XMUTE, SWR_SEQ1, SWR_SEQ2, V1pXSEL pin “H” level input voltage |
2.2 | A5V + 0.1 | V | |
VILB | XMUTE, SWR_SEQ1, SWR_SEQ2, V1pXSEL pin “L” level input voltage range |
–0.1 | 0.8 | V | |
ISPMOA | Spindle output average current (U, V, W total) | 700 | mA | ||
ISPMO | Spindle output current | 700 | mA | ||
ISLDOA | Sled output average current | 400 | mA | ||
ILd1Px | 1pXV switching regulator load current | 900 | mA | ||
ILd3P3 | 3p3V switching regulator load current | 500 | mA | ||
IACTOA | Focus / tracking / tilt / loading output average current | 400 | mA | ||
ICSWOA | CSWO output average current | 200 | mA | ||
ISTPOA | STP output average current | 200 | mA | ||
Fck | SCLK frequency | 30 | 33.8688 | 35 | MHz |
TO | Operating temperature range | –20 | 25 | 75 | °C |
THERMAL METRIC(1) | TPIC2010 | UNIT | |
---|---|---|---|
DFD (HTSSOP) | |||
56 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 16.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 0.8 | °C/W |
RθJB | Junction-to-board thermal resistance | 5.2 | °C/W |
ψJT | Junction-to-top characterization parameter | 1.0 | °C/W |
ψJB | Junction-to-board characterization parameter | 5.2 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 0.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SOMI | High-level output voltage, VOH | IOH = 1 mA | 80% SPIOV |
V | ||
SOMI | Low-level output voltage, VOL | IOL = 1 mA | 20% SPIOV |
V | ||
SIMO | High-level input voltage, VIH | 70% SPIOV |
V | |||
SIMO | Low level input voltage, VIL | 20% SPIOV |
V | |||
SIMO | Input rise/fall time | 10% → 90% PIOV | 3.5 | ns | ||
SIMO | Output rise/fall time(1) | Cload = 30 pF,10% → 90% SPIOV | 10 | ns | ||
SCLK | Internal pulldown resistance | 200 | kΩ | |||
SSZ | Internal pullup resistance | 200 | kΩ |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
ISTBY | Stand by Supply current | SWR_SEQ1 = SWR_SEQ2 = V1PxSEL = A5V | 1 | mA | ||
VCV3 | CV3P3 Output voltage | Iload = 25 mA | 3.135 | 3.3 | 3.465 | V |
RXM | XMUTE pulldown resistor | 100 | 200 | 300 | kΩ | |
RSW1 | SWR_SEQ1 pulldown resistor | 100 | 200 | 300 | kΩ | |
RSW2 | SWR_SEQ2 pulldown resistor | 100 | 200 | 300 | kΩ | |
RSELS1 | V1PxSEL pulldown resistor | 100 | 200 | 300 | kΩ | |
RXRST | XRESET pullup resistor | 16.5 | 33 | 49.5 | kΩ | |
VXRST | XRESET low level output voltage | SIOV = 3.3 V, IOL = –100 µA | 0.3 | V | ||
TPOR | Power-On Reset delay | 15 | 20 | 25 | ms | |
RXFG | XFG output resistor | 100 | 200 | 300 | Ω | |
VXFGH | XFG high level output voltage | SIOV = 3.3 V, XSLEEP = 1, IOH = 100 µA |
2.7 | V | ||
VXFGL | XFG low level output voltage | SIOV = 3.3 V, XSLEEP = 1, IOL = –100 µA |
0.3 | V | ||
RGPO | GPOUT output resistor | 100 | 200 | 300 | Ω | |
VGPOH | GPOUT high level output voltage | SIOV = 3.3 V, XSLEEP = 1, GPOUT_ENA = 1, GPOUT_HL = 1, IOH = 100 µA |
2.7 | V | ||
VGPOL | GPOUT low level output voltage | SIOV = 3.3 V, XSLEEP = 1, GPOUT_ENA = 1,GPOUT_HL = 0, IOH = 100 µA |
0.3 | V | ||
tTSD | Thermal protect on temperature | Design ensured value | 130 | 145 | 165 | ºC |
hytTSD | Thermal protect hys temperature | 5 | 15 | 25 | ºC | |
Vonvcc | A5V Reset on voltage | 3.6 | 3.7 | 3.8 | V | |
Voffvcc | A5V Reset off voltage | 3.8 | 3.9 | 4 | V | |
VonCV3 | CV3P3 reset on voltage | 2.6 | 2.7 | 2.8 | V | |
VoffCV3 | CV3P3 reset off voltage | 2.68 | 2.8 | 2.88 | V | |
HysCV3 | CV3P3 reset voltage Hys | 35 | 85 | 135 | mV | |
VovpspmOn | OVP detection voltage (Spindle)(1) | 6 | 6.2 | 6.4 | V | |
VovpspmOff | OVP release voltage (Spindle)(1) | 5.8 | 6 | 6.2 | V | |
VovpSpmHys | OVP voltage Hys (Spindle)(1) | 140 | 240 | 340 | mV | |
VovpOn | OVP detection voltage (except Spindle)(1) |
6.3 | 6.5 | 6.7 | V | |
VovpOff | OVP release voltage (except Spindle)(1) |
6.1 | 6.3 | 6.5 | V | |
VovpHys | OVP voltage Hys (except Spindle)(1) |
140 | 240 | 340 | mV |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
FCHGP | Frequency | XSLEEP=1 | 132.6 | 156 | 179.4 | kHz |
VCHGP | Output Voltage | Ccp1 = Ccp3 = 0.1 µF Io = –1 mA |
7.76 | 9.7 | 11.64 | V |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
Rds1pxH | High-side FET RDSON | FB1PXV = 0 V REG1PXV + 100 mA, +300 mA | 0.42 | 0.62 | Ω | |
Rds1pxL | Low-side FET RDSON | FB1PXV = 1.2 V REG1PXV –100 mA , –300 mA | 0.2 | 0.4 | Ω | |
VO1p0 | Output voltage (1p0V) | [V1PxSEL,SWR_SEQ1,SWR_SEQ2] = 011 | 0.95 | 1 | 1.05 | V |
VO1p2 | Output voltage (1p2V) | [V1PxSEL,SWR_SEQ1,SWR_SEQ2] = 000 | 1.14 | 1.2 | 1.26 | V |
VO1p5 | Output voltage (1p5V) | [V1PxSEL,SWR_SEQ1,SWR_SEQ2] = 100 | 1.425 | 1.5 | 1.575 | V |
Tdly1px | Soft start time | [SWR_SEQ1,SWR_SEQ2] = 00 From A5V reset off to target 90% |
0.656 | 0.82 | 0.984 | ms |
RdsO1px | Output pulldown transistor Rdson | At Reset On (TSD, A5V_Reset) | 616 | 880 | 1144 | Ω |
Fsw1px | Switching frequency | 2.125 | 2.5 | 2.875 | MHz | |
Vrston1px | Reset on voltage threshold level | 75% | 80% | 85% | ||
Vrstoff1px | Reset off voltage threshold level | 85% | 90% | 95% | ||
VrstHys | Reset off voltage threshold Hys | 5% | 10% | 15% | ||
PSRR1px | PSRR ratio | P5V_SW = 5 V + 200 mVpp, Io = 200 mA, F ≈ 100 kHz |
26 | dB | ||
Iovc1px | Overcurrent protective level(1) | 1.3 | 1.85 | 2.4 | A | |
TMskovc1px | Mask time of overcurrent protection(1) | 0.72 | 1 | 1.32 | ms |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
Rds3p3H | High-side FET RDSON | FB3P3V = 0 V REG3P3V + 100 mA + 300 mA | 0.45 | 0.65 | Ω | |
Rds3p3L | Low-side FET RDSON | FB3P3V = 3.3 V REG3P3V –100 mA – 300 mA | 0.42 | 0.62 | Ω | |
VO3p3 | Output voltage | 3.2 | 3.3 | 3.4 | V | |
Tdly3p3 | Soft start time | [SWR_SEQ1,SWR_SEQ2] = 00 From A5V reset off to target 90% |
0.656 | 0.82 | 0.984 | ms |
Rds3p3 | Output pull down transistor Rdson | At reset on (TSD, A5V_Reset) | 616 | 880 | 1144 | Ω |
Fsw3p3 | Switching frequency | 2.125 | 2.5 | 2.875 | MHz | |
Vrston3p3 | Reset on voltage threshold level | 75% | 80% | 85% | ||
Vrstoff3p3 | Reset off voltage threshold level | 85% | 90% | 95% | ||
Vrst3p3Hys | Reset off voltage threshold Hys | 5% | 10% | 15% | ||
PSRR3p3 | PSRR ratio | P5V_SW = 5 V + 200 mVpp, Io = 200 mA, F ≈ 100 kHz |
26 | dB | ||
Iovc3p3 | Overcurrent protective level(1) | 0.65 | 1.15 | 1.65 | A | |
Tmskovc3p3 | Mask time of overcurrent protection(1) | 0.72 | 1 | 1.32 | ms |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RttlSPM | Total output resistance High side + low side |
IOUT = 0.1 A | 0.25 | 0.5 | Ω | |
VIsns | ISENSE detected voltage | ISENSE voltage | 181 | 196 | 211 | mV |
ResSPM | Resolution | 12 | bit | |||
VoutSPM | Spindle voltage | VSPM(REG8h) = 400h | 2.6 | 3 | 3.4 | V |
VSPM(REG8h) = C00h | –1.55 | –1.25 | –0.95 | V | ||
WidDZSPM | Spindle dead band | Forward | +12h | +52h | +92h | |
Reverse | –92h | –52h | –12h | |||
WidDZSPMLS | Spindle dead band (LS mode) | –40h | 0h | 40h |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RttlSLD | Total output resistance High side + low side |
IO = 0.1 A | 0.7 | 1.1 | Ω | |
ResSLD | Resolution | 10 | bit | |||
WidDZSLD | Input dead band | Forward | +4h | +51h | +90h | |
Reverse | –90h | –51h | –4h | |||
GnSLD | Sled current gain | A5V = 5 V, 5 V = 5 V RL = 10 Ω, 2.2 mH VSLED = 7FFh |
380 | 440 | 500 | mA |
VthEdetSLD | END_DET BEMF threshold voltage | ENDDET_SLCT = 0, SLEDENDTH<1:0> = 00, SLED Enable | 26 | 46 | 66 | mV |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RttlAct | Total output resistance High side + low side |
IO = 0.1 A | 0.7 | 1.1 | Ω | |
ResACT | Resolution | 12 | bit | |||
VOfstACT | Each channel output offset voltage | DAC_code = 000h | –30 | 0 | 30 | mV |
VOfstDACT | Output offset voltage Focus and Tilt | DIFF_TLT = 1 | –50 | 0 | 50 | mV |
GnDAct | Difference gain Focus and Tilt | DIFF_TLT = 1 | –1 | 0 | 1 | db |
GnAct | Voltage gain | DAC_code = 400h | 2.6 | 3 | 3.4 | V |
DAC_code = C00h | –3.4 | –3 | –2.6 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RttlLOD | Total output resistance High side + low side |
IO = 0.1 A | 0.7 | 1.1 | Ω | |
ResLOD | Resolution | 12 | bit | |||
GnLOD | Voltage gain | VLOAD = 400h | 2.6 | 3 | 3.4 | V |
VLOAD = C00h | –3.4 | –3 | –2.6 | |||
WidDZLOD | Dead band | Forward | 2h | 20h | 40h | |
Reverse | –41h | –21h | –3h | |||
TocpLOD | Output 100% limit time | LOAD_05CH = 0 | 0.64 | 0.8 | 0.96 | s |
IocpLOD | Overcurrent protective level | LOAD_05CH = 1 | 125 | 250 | 375 | mA |
DlyocpLOD | Overcurrent protection delay time | LOAD_05CH = 1 | 0.64 | 0.8 | 0.96 | s |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RttlSTP | Total output resistance High Side + Low Side |
IO = 0.1 A | 1.0 | 1.5 | Ω | |
ResSTP | Resolution | 8 | bit | |||
IocpSTP | Overcurrent protection level(1) | 595 | 850 | 1105 | mA | |
DlyocpSTP | OCP Monitor delay time(1) | 0.7 | 1 | 1.3 | us | |
ThlocpSTP | OCP hold time(1) | 18.2 | 26 | 33.8 | ms | |
VthEdetSTP | END_DET threshold level | ENDDET_SLCT = 1, STPDENDTH<1:0> = 00, STP Enable | 19 | 39 | 59 | mV |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RdsCSW | Rds(on) | IO = 0.1 A | 200 | 500 | mΩ | |
IlmtCSW | Current limit threshold level | 0.77 | 1.1 | 1.43 | A | |
ThlCSW | Protection hold time | 1.47 | 1.6 | 2.0 | ms |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RdsLED | Rds(on) | IO = 10 mA | 4.4 | 10 | Ω | |
IlmtLED | Current limit threshold level | 0.07 | 0.1 | 0.13 | A | |
ThlLED | Protection hold time | 0.37 | 0.4 | 0.66 | ms |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
ResTEMP | Resolution | 6 | bit | |||
TEMPrng | Temperature range | CHIPTEMP[5:0] = 00 | 8 | 15 | 22 | °C |
CHIPTEMP[5:0] = 3Fh | 155 | 165 | 175 | |||
FTEMP | Update cycle | 8 | 10 | 12 | kHz |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
TintACTTEMP | Update cycle | 21 | 26 | 31 | ms |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
Fck | SCLK clock frequency | PIOV = 3.3 V | 35 | MHz | ||
tckl | SCLK low time | 11 | ns | |||
tckh | SCLK high time | 11 | ns | |||
tsens | SSZ setup time | 7 | ns | |||
tsenh | SSZ hold time | 7 | ns | |||
tsl | SSZ disable high time | 11 | ns | |||
tds | SIMO setup time (Write) | 7 | ns | |||
tdh | SIMO hold time (Write) | 7 | ns |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
Fck | SCLK clock frequency | PIOV = 3.3 V | 35 | MHz | ||
tckl | SCLK low time | 11 | ns | |||
tckh | SCLK high time | 11 | ns | |||
tsens | SSZ setup time | 7 | ns | |||
tsenh | SSZ hold time | 7 | ns | |||
tsl | SSZ disable high time | 11 | ns | |||
tds | SIMO setup time (Write) | 7 | ns | |||
tdh | SIMO hold time (Write) | 7 | ns | |||
trdly | SOMI delay time (Read) | CLOAD = 10 pF, PIOV = 3.3 V | 2 | 9 | ns | |
tsendl | SOMI hold time (Read) | CLOAD = 10 pF, PIOV = 3.3 V | 2 | 9 | ns | |
trls | SOMI release time (Read) | CLOAD = 10 pF, PIOV = 3.3 V From SSZ rise to SOMI HIZ |
0 | 9 | ns |