SNAS650A JANUARY   2015  – September 2018 TPL5110

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Application Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Ratings
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 DRV
      2. 7.3.2 DONE
    4. 7.4 Device Functional Modes
      1. 7.4.1 Start-Up
      2. 7.4.2 Timer Mode
      3. 7.4.3 One-Shot Mode
    5. 7.5 Programming
      1. 7.5.1 Configuring the Time Interval With the DELAY/M_DRV Pin
      2. 7.5.2 Manual MOSFET Power ON Applied to the DELAY/M_DRV Pin
        1. 7.5.2.1 DELAY/M_DRV
        2. 7.5.2.2 Circuitry
      3. 7.5.3 Selection of the External Resistance
      4. 7.5.4 Quantization Error
      5. 7.5.5 Error Due to Real External Resistance
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.1 Layout Guidelines

The DELAY/M_DRV pin is sensitive to parasitic capacitance. TI suggests that the traces connecting the resistance on this pin to GROUND be kept as short as possible to minimize parasitic capacitance. This capacitance can affect the initial set up of the time interval. Signal integrity on the DRV pin is also improved by keeping the trace length between the TPL5110 and the gate of the MOSFET short to reduce the parasitic capacitance. The EN/ONE_SHOT needs to be tied to GND or VDD with short traces.