SNAS659B June   2015  – September 2018 TPL5111

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Application Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Ratings
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 DRVn
      2. 7.3.2 DONE
    4. 7.4 Device Functional Modes
      1. 7.4.1 Start-Up
      2. 7.4.2 Timer Mode
      3. 7.4.3 One-Shot Mode
    5. 7.5 Programming
      1. 7.5.1 Configuring the Time Interval With the DELAY/M_DRV Pin
      2. 7.5.2 Manual Power ON Applied to the DELAY/M_DRV Pin
        1. 7.5.2.1 DELAY/M_DRV
        2. 7.5.2.2 Circuitry
      3. 7.5.3 Selection of the External Resistance
      4. 7.5.4 Quantization Error
      5. 7.5.5 Error Due to Real External Resistance
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Timing Requirements

MIN(3) NOM(4) MAX(3) UNIT
trDRVn Rise Time DRVn(2) Capacitive load 50 pF 50 ns
tfDRVn Fall Time DRVn(2) Capacitive load 50 pF 50 ns
tDDONE DONE to DRVn delay Minimum delay(1) 100 ns
Maximum delay (1) tDRVn
tM_DRV Valid manual MOSFET Power ON Observation time 30 ms 20 ms
tDB De-bounce manual MOSFET Power ON 20 ms
(1) From DRVn rising edge.
(2) This parameter is specified by design and/or characterization and is not tested in production.
(3) Limits are specified by testing, design, or statistical analysis at 25°C. Limits over the operating temperature range are specified through correlations using statistical quality control (SQC) method.
(4) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not specified on shipped production material.
TPL5111 TIMING_5111_rev2.gifFigure 1. TPL5111 Timing