SLUSFA1 September   2024 TPS1214-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump and Gate Driver Output (VS, GATE, BST, SRC)
      2. 8.3.2 Capacitive Load Driving
        1. 8.3.2.1 Using Low Power Bypass FET (G Drive) for Load Capacitor Charging
        2. 8.3.2.2 Using Main FET (GATE drive) Gate Slew Rate Control
      3. 8.3.3 Overcurrent and Short-Circuit Protection
        1. 8.3.3.1 I2t-Based Overcurrent Protection
          1. 8.3.3.1.1 I2t-Based Overcurrent Protection With Auto-Retry
          2. 8.3.3.1.2 I2t-Based Overcurrent Protection With Latch-Off
        2. 8.3.3.2 Short-Circuit Protection
      4. 8.3.4 Analog Current Monitor Output (IMON)
      5. 8.3.5 NTC based Temperature Sensing (TMP) and Analog Monitor Output (ITMPO)
      6. 8.3.6 Fault Indication and Diagnosis (FLT, SCP_TEST)
      7. 8.3.7 Reverse Polarity Protection
      8. 8.3.8 Undervoltage Protection (UVLO)
    4. 8.4 Device Functional Modes
      1. 8.4.1 State Diagram
      2. 8.4.2 State Transition Timing Diagram
      3. 8.4.3 Power Down
      4. 8.4.4 Shutdown Mode
      5. 8.4.5 Low Power Mode (LPM)
      6. 8.4.6 Active Mode (AM)
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application 1: Driving Power at all times (PAAT) Loads With Automatic Load Wakeup
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Typical Application 2: Driving Power at all times (PAAT) Loads With Automatic Load Wakeup and Output Bulk Capacitor Charging
      1. 9.3.1 Design Requirements
      2. 9.3.2 External Component Selection
      3. 9.3.3 Application Curves
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information
    2. 12.2 Mechanical Data

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.4.6 Active Mode (AM)

The device transitions from shutdown mode to active mode directly when EN/UVLO and LPM are driven high together at same time.

TPS1214-Q1 transitions from low power mode into active mode by:

  • External Trigger: Drive LPM high externally.
  • Internal Trigger: After load current exceeds load wakeup threshold (ILWU), TPS1214-Q1 automatically turns ON main FET (GATE drive) and turns OFF the bypass FET (G drive). Drive LPM high after load wakeup event to switch to active mode.

In this mode, charge pump, gate drivers and all protections are enabled. The main FET (GATE drive) can be tuned ON or OFF by driving INP high or low respectively and bypass FET (G drive) is turned OFF and WAKE pin asserts low in this state.

The device exits active mode and enters low power mode when LPM is pulled low.

Protections available in active state are:

  • Input UVLO: Main FET (GATE drive) is turned OFF when voltage on EN/UVLO falls below V(UVLOF).
  • Charge pump UVLO: Main FET (GATE drive) is turned OFF when voltage between BST to SRC falls below V(BST_UVLOF) and FLT asserts low.
  • Main path I2t protection: Main FET (GATE drive) is turned OFF when voltage across CS1+ and CS1– remains above I2t start threshold (V(OCP)) for time set by the I2t factor based on CI2t. The device goes in auto-retry or latch-off based on the selected configuration and FLT asserts low.
  • Main path Short-circuit protection: Main FET (GATE drive) is turned OFF when voltage across CS1+ and CS1– exceeds the set short-circuit threshold (V(SCP)). The device goes in auto-retry or latch-off based on the selected configuration and FLT asserts low.