SLVSCM2D October   2014  – December 2019 TPS1H100-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements – Current Sense Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Accurate Current Sense
      2. 7.3.2 Programmable Current Limit
      3. 7.3.3 Inductive-Load Switching-Off Clamp
      4. 7.3.4 Full Protections and Diagnostics
        1. 7.3.4.1  Short-to-GND and Overload Detection
        2. 7.3.4.2  Open-Load Detection
        3. 7.3.4.3  Short-to-Battery Detection
        4. 7.3.4.4  Reverse-Polarity Detection
        5. 7.3.4.5  Thermal Protection Behavior
        6. 7.3.4.6  UVLO Protection
        7. 7.3.4.7  Loss of GND Protection
        8. 7.3.4.8  Loss of Power Supply Protection
        9. 7.3.4.9  Reverse Current Protection
        10. 7.3.4.10 Protection for MCU I/Os
      5. 7.3.5 Diagnostic Enable Function
    4. 7.4 Device Functional Modes
      1. 7.4.1 Working Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Distinguishing of Different Fault Modes
        2. 8.2.2.2 AEC Q100-012 Test Grade A Certification
        3. 8.2.2.3 EMC Transient Disturbances Test
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
      1. 10.2.1 Without a GND Network
      2. 10.2.2 With a GND Network
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.4.3 Short-to-Battery Detection

Short-to-battery detectioin has the same detection mechanism and behavior as open-load detection, both in the on-state and off-state. See the fault truth table, Table 1, for more details. In the on-state, the reverse current flows through the FET instead of the body diode, leading to less power dissipation. Thus, the worst case for off-state is when reverse current occurs. In the off-state, if VOUT – VVS < VF, short to battery can be detected. (VF is the body diode forward voltage and typically 0.7 V.) However, the reverse current does not occur. If VOUT – VVS > VF, short to battery can be detected, and the reverse current should be lower than Irev2 to ensure the survival of the device. TI recommends switching on the input for lower power dissipation or the reverse block circuitry for the supply. See Reverse Current Protection for more external protection circuitry information.