SLVSGL6A July   2022  – December 2022 TPS1HC30-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Accurate Current Sense
      2. 8.3.2 Programmable Current Limit
        1. 8.3.2.1 Capacitive Charging
      3. 8.3.3 Inductive-Load Switching-Off Clamp
      4. 8.3.4 Full Protections and Diagnostics
        1. 8.3.4.1  Short-Circuit and Overload Protection
        2. 8.3.4.2  Open-Load and Short-to-Battery Detection
        3. 8.3.4.3  Short-to-Battery Detection
        4. 8.3.4.4  Reverse-Polarity and Battery Protection
        5. 8.3.4.5  Latch-Off Mode
        6. 8.3.4.6  Thermal Protection Behavior
        7. 8.3.4.7  UVLO Protection
        8. 8.3.4.8  Loss of GND Protection
        9. 8.3.4.9  Loss of Power Supply Protection
        10. 8.3.4.10 Reverse Current Protection
        11. 8.3.4.11 Protection for MCU I/Os
      5. 8.3.5 Diagnostic Enable Function
    4. 8.4 Device Functional Modes
      1. 8.4.1 Working Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Dynamically Changing Current Limit
        2. 9.2.2.2 EMC Transient Disturbances Test
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
        1. 9.4.2.1 Without a GND Network
        2. 9.4.2.2 With a GND Network
      3. 9.4.3 Thermal Considerations
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

VBB = 6 V to 28 V, TA = –40°C to 125°C (unless otherwise noted); Typical application is 13.5 V, 10 Ω, RILIM=Open (unless otherwise specified) 
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT VOLTAGE AND CURRENT
VClamp VDS clamp voltage TJ=25°C 35 43 V
TJ = –40°C to 150°C 33 45 V
VUVLOR VBB undervoltage lockout rising Measured with respect to the GND pin of the device 3.0 3.5 4.0 V
VUVLOF VBB undervoltage lockout falling 2.4 2.6 3.0 V
ISB Standby current (total device leakage including MOSFET channel) VBB ≤ 18 V, VEN = VDIA_EN = 0 V, VOUT = 0 V TJ = 25°C 0.3 µA
TJ = 85°C 2.5 µA
TJ = 125°C 9 µA
IOUT(standby) Output leakage current VBB ≤ 18 V, VEN = VDIA_EN = 0 V, VOUT = 0 V TJ = 25°C 0.01 0.3 µA
TJ = 85°C 2.5 µA
IDIA Current consumption in diagnostic mode VBB ≤ 18 V, ISNS = 0 mA
VEN = 0 V, VDIA_EN = 5 V, VOUT = 0V		 1.3 3 mA
IQ Quiescent current channel enabled VBB ≤ 28 V
VEN = VDIA_EN = 5 V, IOUTx = 0 A		 1.6 3 mA
ILNOM Continuous load current Channel enabled, TAMB = 85°C 4.5 A
tSTBY Standby mode delay time VENx = VDIA_EN = 0 V to standby 20 ms
RON CHARACTERISTICS
RON On-resistance
(Includes MOSFET channel and metallization on die)		 6 V ≤ VBB ≤ 28 V,   IOUT= 1 A TJ = 25°C 30 mΩ
TJ = 150°C 57 mΩ
3 V ≤ VBB ≤ 6 V,    IOUT =1 A TJ = 25°C 57 mΩ
TJ = 150°C 75 mΩ
RON(REV) On-resistance during reverse polarity -18 V ≤ VBB ≤ -6 V TJ = 25°C 30 mΩ
TJ = 150°C 57 mΩ
VF Source-to-drain body diode voltage VEN = 0 V IOUT = –1 A 0.3 0.7 1 V
CURRENT SENSE CHARACTERISTICS
KSNS Current sense ratio
IOUT / ISNS		 IOUT = 1.5 A 1560
ISNSI Current sense current and accuracy VBB > VBB_ISNS, VEN = VDIA_EN = 5 V IOUT = 6 A 3.8 mA
–3 3 %
IOUT = 3 A   1.92   mA
–4 4 %
IOUT = 1.5 A   0.96   mA
–4 4 %
IOUT = 750 mA   0.48   mA
–6 6 %
IOUT = 300 mA 0.192   mA
–10 10 %
IOUT = 150 mA   0.096   mA
–15 15 %
IOUT = 75 mA 0.0481 mA
–25 25 %
IOUT = 30 mA 0.0192 mA
–40 40 %
IOUT = 15 mA 0.0096 mA
–60 60 %
IOUT = 7.5 mA 0.0048 mA
-80 80 %
SNS CHARACTERISTICS
VSNSFH VSNS fault high-level VDIA_EN = 5 V 4.2 5 5.77 V
VDIA_EN = 3.3 V 3.3 3.5 3.75 V
VDIA_EN = VIH 2.8 3.15 3.5 V
ISNSFH ISNS fault high-level VDIA_EN > VIH,DIAG_EN 6.6 mA
VBB_ISNS VBB headroom needed for full current sense and fault functionality VDIAG_EN = 3.3 V 5.3 V
VBB_ISNS VBB headroom needed for full current sense and fault functionality VDIAG_EN = 5 V 6.5 V
CURRENT LIMIT CHARACTERISTICS
ICL_LINPK Linear Mode peak TJ = –40°C to 150°C dI/dt < 0.01 A/ms RILIM = 7.15 kΩ to 71.5 kΩ 1.4 × ICL A
ICL_ENPS Peak current enabling into permanent short TJ = –40°C to 150°C RILIM = 7.15 kΩ to 71.5 kΩ 2 × ICL A
IOVCR OVCR Peak current threshold when short is applied while switch enabled  TJ = –40°C to 150°C RILIM ≥ 35 kΩ 15 A
15 kΩ ≤ RILIM < 35 kΩ 23 A
RILIM < 15kΩ 33 A
ICL ICL Current Limit Threshold(3)  TJ = –40°C to 150°C, VDS = 3 V RILIM = GND 9.1 13 16.9 A
RILIM = open, or out of range
 		 5 A
KCL Current Limit Ratio(1)  TJ = –40°C to 150°C, VDS = 3 V RILIM = 7.15 kΩ 65.6 87.5 109.4
A * kΩ
RILIM = 25 kΩ 76.5 90 103.5
A * kΩ
RILIM = 71.5 kΩ 69 95 115
A * kΩ
FAULT CHARACTERISTICS
RVOL Open-load (OL) detection internal pull-up resistor VEN = 0 V, VDIA_EN = 5 V 150 kΩ
tOL Open-load (OL) detection deglitch time VEN = 0 V, VDIA_EN = 5 V, When VBB – VOUT < VOL, duration longer than tOL. Openload detected. 400 1000 µs
VOL Open-load (OL) detection voltage VEN = 0 V, VDIA_EN = 5 V 1.5 V
VFLT FLT low output voltage  IFLT = 2.5 mA 0.5 V
tOL1 OL and STB indication-time from EN falling VEN = 5 V to 0 V, VDIA_EN = 5 V
IOUT = 0 mA, VOUT = VBB - VOL		 500 1000 µs
tOL2 OL and STB indication-time from DIA_EN rising VEN = 0 V, VDIA_EN = 0 V to 5 V
IOUT = 0 mA, VOUT = VBB - VOL		 1000 µs
TABS Thermal shutdown 165 °C
TREL Relative thermal shutdown 85 °C
THYS Thermal shutdown hysteresis 25 °C
tFAULT_FLT Fault  indication-time VDIA_EN = 5 V
Time between fault and FLT asserting		 60 µs
tFAULT_SNS Fault  indication-time VDIA_EN = 5 V
Time between fault and ISNS settling at VSNSFH		 60 µs
tRETRY Retry time Time from fault shutdown until switch re-enable (thermal shutdown). 1 2 3 ms
EN PIN CHARACTERISTICS
VIL, EN Input voltage low-level No GND Network 0.8 V
VIH, EN Input voltage high-level No GND Network 1.5 V
VIHYS, EN Input voltage hysteresis 280 mV
REN Internal pulldown resistor 200 350 500 kΩ
IIL, EN Input current low-level VEN = 0.8 V 2.2 µA
IIH, EN Input current high-level VEN = 5 V 14 µA
DIA_EN PIN CHARACTERISTICS
VIL, DIA_EN Input voltage low-level No GND Network 0.8 V
VIH, DIA_EN Input voltage high-level No GND Network 1.5 V
VIHYS, DIA_EN Input voltage hysteresis 280 mV
RDIA_EN Internal pulldown resistor 100 250 500 kΩ
IIL, DIA_EN Input current low-level VDIA_EN = 0.8 V 2.2 µA
IIH, DIA_EN Input current high-level VDIA_EN = 5 V 14 µA
LATCH PIN Characteristics
VIL, LATCH Input voltage low-level No GND Network 0.8 V
VIH, LATCH Input voltage high-level No GND Network 1.5 V
VIHYS, LATCH Input voltage hysteresis 280 mV
RLATCH Internal pulldown resistor 0.7 1 1.3 MΩ
IIL, LATCH Input current low-level VLATCH = 0.8 V 2.2 µA
IIH, LATCH Input current high-level VLATCH = 5 V 14 µA
(1) Current limit regulation value will vary with increase of VDS voltage. For more information, see Section 8.3.2