SLVSGZ7B May   2023  – October 2023 TPS2000E , TPS2001E , TPS2068E , TPS2069E

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6.     13
    7. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Undervoltage Lockout
      2. 7.3.2 Enable
      3. 7.3.3 Internal Charge Pump
      4. 7.3.4 Current Limit
      5. 7.3.5 FLT
      6. 7.3.6 Output Discharge
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Active Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input and Output Capacitance
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

Unless otherwise noted: VIN = 5.5 V, VEN = VIN, IOUT = 0 A, –40°C ≤ TJ ≤ 125°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SWITCH (TPS2068E, TPS2069E)
RDS(ON) (DBV) Static drain-source on-state resistance, 5V or 3.3V operation VIN = 5 V or 3.3 V, IO = 1.5 A, -40°C ≤ TJ ≤ 125°C 70 105 mΩ
Static drain-source on-state resistance, 2.7V operation VIN = 2.7 V, IO = 1.5 A, –40°C ≤ TJ ≤ 125°C 70 110 mΩ
POWER SWITCH (TPS2000E, TPS2001E)
RDS(ON) (DBV) Static drain-source on-state resistance, 5V or 3.3V operation VIN = 5 V or 3.3 V, IO = 2.0 A, -40°C ≤ TJ ≤ 125°C 70 105 mΩ
Static drain-source on-state resistance, 2.7V operation VIN = 2.7 V, IO = 2.0 A, –40°C ≤ TJ ≤ 125°C 70 110 mΩ
Trise and Tfall
tr Rise time, output VIN = 5.5 V, CL = 1 uF, RL = 10 Ω, TJ = 25°C 0.6 1.5 ms
VIN = 2.7 V, CL = 1 uF, RL = 10 Ω, TJ = 25°C 0.4 1 ms
tf Fall time, output VIN = 5.5 V, CL = 1 uF, RL = 10 Ω, TJ = 25°C 0.05 0.5 ms
VIN = 2.7 V, CL = 1 uF, RL = 10 Ω, TJ = 25°C 0.05 0.5 ms
ENABLE INPUT EN (TPS2068E, TPS2069E and TPS2000E)
VIH Enable high-level input voltage 2.7 V ≤ VIN ≤ 5.5 V 1.8 V
VIL Enable low-level input voltage 2.7 V ≤ VIN ≤ 5.5 V 0.8 V
IEN EN pin leakage current VEN=5.5V –0.5 0.5 uA
ENABLE INPUT EN (TPS2001E)
VIH Enable high-level input voltage  2.7 V ≤ VIN ≤ 5.5 V 1.75 V
VIH Enable high-level input voltage 2.7 V ≤ VIN ≤ 5.0 V  1.6 V
VIH Enable high-level input voltage 2.7 V ≤ VIN ≤ 3.5 V  1.5 V
VIL Enable low-level input voltage  2.7 V ≤ VIN ≤ 5.5 V  0.8 V
IEN EN pin leakage current VEN=5.5V –0.5 0.5 uA
Ton  and Toff
ton Turnon time CL = 100 µF, RL = 10 Ω 3 ms
toff Turnoff time CL = 100 µF, RL = 10 Ω 3 ms
DISCHARGE
RDCHG Discharge resistance VIN = VOUT = 5V, disabled 400 500 810 Ω
CURRENT LIMIT (TPS2068E and TPS2069E)
IOS Short circuit output current VIN = 5 V, OUT connect to GND, device enable into short circuit, TJ = 25°C 1.71 2.13 2.55 A
VIN = 5 V, OUT connect to GND, device enable into short circuit, –40°C ≤ TJ ≤ 125°C 1.6 2.13 2.66 A
tios response time to short circuit VIN = 5.0 V, RL = 50mΩ. See Figure 7-5. 1.5 us
CURRENT LIMIT (TPS2000E and TPS2001E)
IOS Short circuit output current VIN = 5 V, OUT connect to GND, device enable into short circuit, TJ = 25°C 2.24 2.8 3.36 A
VIN = 5 V, OUT connect to GND, device enable into short circuit, –40°C ≤ TJ ≤ 125°C 2.1 2.8 3.5 A
tios response time to short circuit VIN = 5.0 V, RL = 50mΩ. See Figure 7-5. 1.5 us
SUPPLY CURRENT
ISD Supply current, switch disable No load on OUT, VEN = 0 V, TJ = 25°C 0.5 1 uA
No load on OUT, VEN = 0 V, –40°C ≤ TJ ≤ 125°C 0.5 5 uA
ISE Supply current, switch enable No load on OUT, VEN = 5.5 V, TJ = 25°C 93 118 uA
No load on OUT, VEN = 5.5 V, –40°C ≤ TJ ≤ 125°C 93 118 uA
ILKG Leakage current OUT connected to ground, VEN = 0 V, –40°C ≤ TJ ≤ 125°C 1 uA
IREV Reverse leakage current VOUT = 5.5 V, IN = ground, TJ = 25°C 0 uA
UNDERVOLTAGE LOCKOUT
VUVLO undervoltage lockout threshold, IN VIN rising 2 2.6 V
Hysteresis, IN TJ = 25°C 75 mV
OVERCURRENT FLAG
VOL(/OC) Output low voltage IO(/OC) = 5 mA  180 mV
IOFF_Leakage Off-state leakage V/OC = 5.5 V 1 uA
TOC_DEG /OC Flag deglitch /OC assertion or de-assertion 6 8 12 ms
THERMAL SHUTDOWN
TOTSD_R Thermal shutdown threshold rising threshold 155 175 195 °C
Hysteresis 10 °C
THERMAL SHUTDOWN in Current Limit
TOTSD_CL_R Thermal shutdown rising threshold in current limit 135 155 175 °C
Hysteresis 10 °C