7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
|
MIN |
MAX |
UNIT |
VIN |
Input voltage |
–0.3 |
4 |
V |
VOUT |
Output voltage |
|
VIN + 0.3 |
V |
VON |
Input voltage |
–0.3 |
4 |
V |
PD |
Power dissipation at TA = 25°C |
|
0.48 |
W |
IMAX |
Maximum continuous switch current |
|
0.5 |
A |
TA |
Operating free-air temperature |
–40 |
85 |
°C |
Tlead |
Maximum lead temperature (10-s soldering time) |
|
300 |
°C |
Tstg |
Storage temperature |
–65 |
150 |
°C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
|
VALUE |
UNIT |
V(ESD) |
Electrostatic discharge |
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) |
±2000 |
V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) |
±1000 |
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
|
MIN |
MAX |
UNIT |
VIN |
Input voltage |
1.1 |
3.6 |
V |
VOUT |
Output voltage |
|
VIN |
V |
VIH |
High-level input voltage, ON |
0.85 |
3.6 |
V |
VIL |
Low-level input voltage, ON |
|
0.4 |
V |
CIN |
Input capacitor |
1 |
|
μF |
7.4 Thermal Information
THERMAL METRIC(1) |
TPS22903 |
UNIT |
YFP (DSBGA) |
20 PINS |
RθJA |
Junction-to-ambient thermal resistance |
192.6 |
°C/W |
RθJC(top) |
Junction-to-case (top) thermal resistance |
2.3 |
°C/W |
RθJB |
Junction-to-board thermal resistance |
35.8 |
°C/W |
ψJT |
Junction-to-top characterization parameter |
11.8 |
°C/W |
ψJB |
Junction-to-board characterization parameter |
35.6 |
°C/W |
RθJC(bot) |
Junction-to-case (bottom) thermal resistance |
— |
°C/W |
(1) For more information about traditional and new thermal metrics, see the
Semiconductor and IC Package Thermal Metrics application report,
SPRA953.
7.5 Electrical Characteristics
VIN = 1.1 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER |
TEST CONDITIONS |
TA |
MIN |
TYP(1) |
MAX |
UNIT |
IIN |
Quiescent current |
IOUT = 0, VIN = VON |
Full |
|
|
1 |
μA |
IIN(OFF) |
OFF-state supply current |
VON = GND, OUT = Open |
Full |
|
|
1 |
μA |
IIN(LEAKAGE) |
OFF-state switch current |
VON = GND, VOUT = 0 |
Full |
|
|
1 |
μA |
rON |
ON-state resistance |
IOUT = –200 mA |
VIN = 3.6 V |
25°C |
|
66 |
90 |
mΩ |
Full |
|
|
95 |
VIN = 2.5 V |
25°C |
|
75 |
95 |
Full |
|
|
110 |
VIN = 1.8 V |
25°C |
|
90 |
115 |
Full |
|
|
125 |
VIN = 1.2 V |
25°C |
|
135 |
175 |
Full |
|
|
185 |
VIN = 1.1 V |
25°C |
|
157 |
275 |
Full |
|
|
300 |
rPD |
Output pulldown resistance |
VIN = 3.3 V, VON = 0 (TPS22904 only), IOUT = 30 mA |
|
|
85 |
135 |
Ω |
ION |
ON-state input leakage current |
VON = 1.1 V to 3.6 V or GND |
Full |
|
|
1 |
μA |
(1) Typical values are at VIN = 3.3 V and TA = 25°C.
7.6 Switching Characteristics
VIN = 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER |
TEST CONDITIONS |
TPS22903 |
TPS22904 |
UNIT |
MIN |
TYP(1) |
MAX |
MIN |
TYP(1) |
MAX |
tON |
Turnon time |
IOUT = 100 mA, CL = 0.1 μF |
|
0.9 |
1.5 |
|
0.9 |
1.5 |
μs |
tOFF |
Turnoff time |
IOUT = 100 mA, CL = 0.1 μF |
|
5.8 |
8 |
|
5.3 |
7 |
μs |
tr |
VOUT rise time |
IOUT = 100 mA, CL = 0.1 μF |
|
0.80 |
5 |
|
0.8 |
5 |
μs |
tf |
VOUT fall time |
IOUT = 100 mA, CL = 0.1 μF |
|
8.3 |
10 |
|
5.8 |
7 |
μs |
(1) Typical values are at TA = 25°C.
7.7 Typical Characteristics