7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
|
MIN |
MAX |
UNIT |
VIN |
Input voltage |
–0.3 |
4 |
V |
VOUT |
Output voltage |
|
VIN + 0.3 |
V |
VON |
Input voltage |
–0.3 |
4 |
V |
PD |
Power dissipation at TA = 25°C |
|
0.48 |
W |
IMAX |
Maximum continuous switch current |
|
500 |
mA |
TA |
Operating free-air temperature range |
–40 |
85 |
°C |
Maximum lead temperature (10-s soldering time), Tlead |
|
300 |
°C |
Storage temperature, Tstg |
-45 |
150 |
°C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
|
VALUE |
UNIT |
V(ESD) |
Electrostatic discharge |
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) |
±2000 |
V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) |
±1000 |
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
|
MIN |
MAX |
UNIT |
VIN |
Input voltage range |
1 |
3.6 |
V |
VOUT |
Output voltage range |
|
VIN |
V |
VIH |
High-level input voltage, ON |
0.85 |
3.6 |
V |
VIL |
Low-level input voltage, ON |
|
0.4 |
V |
CIN |
Input capacitor |
1 |
|
μF |
7.4 Thermal Information
THERMAL METRIC(1) |
TPS2206 |
UNIT |
YZV (DSBGA) |
4 PINS |
RθJA |
Junction-to-ambient thermal resistance |
189.1 |
°C/W |
RθJC(top) |
Junction-to-case (top) thermal resistance |
1.9 |
°C/W |
RθJB |
Junction-to-board thermal resistance |
36.8 |
°C/W |
ψJT |
Junction-to-top characterization parameter |
11.3 |
°C/W |
ψJB |
Junction-to-board characterization parameter |
36.8 |
°C/W |
RθJC(bot) |
Junction-to-case (bottom) thermal resistance |
— |
°C/W |
(1) For more information about traditional and new thermal metrics, see the
Semiconductor and IC Package Thermal Metrics application report,
SPRA953.
7.5 Electrical Characteristics
VIN = 1.0 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER |
TEST CONDITIONS |
TA |
MIN |
TYP |
MAX |
UNIT |
IIN |
Quiescent current |
IOUT = 0, VIN = VON |
VIN = 1.1 V |
Full |
|
37 |
120 |
nA |
VIN = 1.8 V |
Full |
|
82 |
235 |
VIN = 3.6 V |
Full |
|
204 |
880 |
IIN(OFF) |
OFF-state supply current |
VON = GND, OUT = Open |
VIN = 1.1 V |
Full |
|
22 |
210 |
nA |
VIN = 1.8 V |
Full |
|
44 |
260 |
VIN = 3.6 V |
Full |
|
137 |
700 |
IIN(LEAKAGE) |
OFF-state switch current |
VON = GND, VOUT = 0 |
VIN = 1.1 V |
Full |
|
22 |
140 |
nA |
VIN = 1.8 V |
Full |
|
45 |
230 |
VIN = 3.6 V |
Full |
|
137 |
610 |
rON |
ON-state resistance |
IOUT = - 200 mA |
VIN = 3.6 V |
25°C |
|
90 |
108 |
mΩ |
Full |
|
|
125 |
VIN = 2.5 V |
25°C |
|
100 |
120 |
Full |
|
|
140 |
VIN = 1.8 V |
25°C |
|
114 |
138 |
Full |
|
|
160 |
VIN = 1.2 V |
25°C |
|
172 |
210 |
Full |
|
|
235 |
VIN = 1.1 V |
25°C |
|
204 |
330 |
Full |
|
|
330 |
rPD |
Output pulldown resistance |
VIN = 3.3 V, VON = 0, IOUT = 30 mA |
25°C |
|
88 |
120 |
Ω |
ION |
ON input leakage current |
VON = 1.1 V to 3.6 V or GND |
Full |
|
|
25 |
nA |
7.6 Switching Characteristics – VIN = 1.1 V
TA = 25°C , RL_CHIP = 120 Ω (unless otherwise noted)
PARAMETER |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
tON |
Turnon time |
RL = 500 Ω |
CL = 0.1 μF |
|
531 |
|
μs |
CL = 1 μF |
|
596 |
|
CL = 3.3 μF |
|
659 |
|
tOFF |
Turnoff time |
RL = 500 Ω |
CL = 0.1 μF |
|
11 |
|
μs |
CL = 1 μF |
|
67 |
|
CL = 3.3 μF |
|
225 |
|
tr |
VOUT rise time |
RL = 500 Ω |
CL = 0.1 μF |
|
365 |
|
μs |
CL = 1 μF |
|
367 |
|
CL = 3.3 μF |
|
395 |
|
tf |
VOUT fall time |
RL = 500 Ω |
CL = 0.1 μF |
|
21 |
|
μs |
CL = 1 μF |
|
189 |
|
CL = 3.3 μF |
|
565 |
|
7.7 Switching Characteristics – VIN = 1.2 V
TA = 25°C , RL_CHIP = 120 Ω (unless otherwise noted)
PARAMETER |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
tON |
Turnon time |
RL = 500 Ω |
CL = 0.1 μF |
|
471 |
|
μs |
CL = 1 μF |
|
527 |
|
CL = 3.3 μF |
|
587 |
|
tOFF |
Turnoff time |
RL = 500 Ω |
CL = 0.1 μF |
|
10 |
|
μs |
CL = 1 μF |
|
61 |
|
CL = 3.3 μF |
|
199 |
|
tr |
VOUT rise time |
RL = 500 Ω |
CL = 0.1 μF |
|
324 |
|
μs |
CL = 1 μF |
|
325 |
|
CL = 3.3 μF |
|
350 |
|
tf |
VOUT fall time |
RL = 500 Ω |
CL = 0.1 μF |
|
20 |
|
μs |
CL = 1 μF |
|
175 |
|
CL = 3.3 μF |
|
523 |
|
7.8 Switching Characteristics – VIN = 1.8 V
TA = 25°C , RL_CHIP = 120 Ω (unless otherwise noted)
PARAMETER |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
tON |
Turnon time |
RL = 500 Ω |
CL = 0.1 μF |
|
302 |
|
μs |
CL = 1 μF |
|
335 |
|
CL = 3.3 μF |
|
367 |
|
tOFF |
Turnoff time |
RL = 500 Ω |
CL = 0.1 μF |
|
8 |
|
μs |
CL = 1 μF |
|
49 |
|
CL = 3.3 μF |
|
167 |
|
tr |
VOUT rise time |
RL = 500 Ω |
CL = 0.1 μF |
|
220 |
|
μs |
CL = 1 μF |
|
220 |
|
CL = 3.3 μF |
|
235 |
|
tf |
VOUT fall time |
RL = 500 Ω |
CL = 0.1 μF |
|
15 |
|
μs |
CL = 1 μF |
|
159 |
|
CL = 3.3 μF |
|
481 |
|
7.9 Switching Characteristics – VIN = 2.5 V
TA = 25°C , RL_CHIP = 120 Ω (unless otherwise noted)
PARAMETER |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
tON |
Turnon time |
RL = 500 Ω |
CL = 0.1 μF |
|
223 |
|
μs |
CL = 1 μF |
|
246 |
|
CL = 3.3 μF |
|
268 |
|
tOFF |
Turnoff time |
RL = 500 Ω |
CL = 0.1 μF |
|
7 |
|
μs |
CL = 1 μF |
|
47 |
|
CL = 3.3 μF |
|
158 |
|
tr |
VOUT rise time |
RL = 500 Ω |
CL = 0.1 μF |
|
175 |
|
μs |
CL = 1 μF |
|
175 |
|
CL = 3.3 μF |
|
187 |
|
tf |
VOUT fall time |
RL = 500 Ω |
CL = 0.1 μF |
|
18 |
|
μs |
CL = 1 μF |
|
185 |
|
CL = 3.3 μF |
|
471 |
|
7.10 Switching Characteristics – VIN = 3 V
TA = 25°C , RL_CHIP = 120 Ω (unless otherwise noted)
PARAMETER |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
tON |
Turnon time |
RL = 500 Ω |
CL = 0.1 μF |
|
191 |
|
μs |
CL = 1 μF |
|
211 |
|
CL = 3.3 μF |
|
231 |
|
tOFF |
Turnoff time |
RL = 500 Ω |
CL = 0.1 μF |
|
7 |
|
μs |
CL = 1 μF |
|
46 |
|
CL = 3.3 μF |
|
156 |
|
tr |
VOUT rise time |
RL = 500 Ω |
CL = 0.1 μF |
|
159 |
|
μs |
CL = 1 μF |
|
160 |
|
CL = 3.3 μF |
|
170 |
|
tf |
VOUT fall time |
RL = 500 Ω |
CL = 0.1 μF |
|
17 |
|
μs |
CL = 1 μF |
|
160 |
|
CL = 3.3 μF |
|
473 |
|
7.11 Switching Characteristics – VIN = 3.6 V
TA = 25°C , RL_CHIP = 120 Ω (unless otherwise noted)
PARAMETER |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
tON |
Turnon time |
RL = 500 Ω |
CL = 0.1 μF |
|
166 |
|
μs |
CL = 1 μF |
|
183 |
|
CL = 3.3 μF |
|
201 |
|
tOFF |
Turnoff time |
RL = 500 Ω |
CL = 0.1 μF |
|
7 |
|
μs |
CL = 1 μF |
|
45 |
|
CL = 3.3 μF |
|
155 |
|
tr |
VOUT rise time |
RL = 500 Ω |
CL = 0.1 μF |
|
146 |
|
μs |
CL = 1 μF |
|
146 |
|
CL = 3.3 μF |
|
156 |
|
tf |
VOUT fall time |
RL = 500 Ω |
CL = 0.1 μF |
|
17 |
|
μs |
CL = 1 μF |
|
161 |
|
CL = 3.3 μF |
|
475 |
|
7.12 Typical Characteristics