The TPS22967 device is a small, ultra-low RON, single-channel load switch with controlled turnon. The device contains an N-channel MOSFET that can operate over an input voltage range of 0.8 V to 5.5 V and can support a maximum continuous current of
4 A. The switch is controlled by an on/off input (ON), which can interface directly with low-voltage control signals. In the TPS22967, a 225-Ω pulldown resistor is added for quick output discharge when the switch is turned off.
The TPS22967 is available in a small, space-saving 2-mm × 2-mm 8-pin WSON package (DSG) with integrated thermal pad allowing for high power dissipation. The device is characterized for operation over the free-air temperature range of –40°C to 85°C.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TPS22967 | WSON (8) | 2.00 mm × 2.00 mm |
Changes from * Revision (August 2013) to A Revision
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
CT | 6 | O | Switch slew rate control. Can be left floating. See Application and Implementation for more information. |
GND | 5 | – | Device ground. |
ON | 3 | I | Active high switch control input. Do not leave floating. |
VBIAS | 4 | I | Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5 V to 5.5 V. See Application Information section for more information. |
VIN | 1, 2 | I | Switch input. Input capacitor recommended for minimizing VIN dip. Recommended voltage range for this pin for optimal RON performance is 0.8 V to VBIAS. |
VOUT | 7, 8 | O | Switch output. |
Thermal Pad | – | Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See Layout Example for layout guidelines. |
MIN | MAX | UNIT(2) | |||
---|---|---|---|---|---|
VIN | Input voltage | –0.3 | 6 | V | |
VOUT | Output voltage | –0.3 | 6 | V | |
VBIAS | Bias voltage | –0.3 | 6 | V | |
VON | ON voltage | –0.3 | 6 | V | |
IMAX | Maximum continuous switch current | 4 | A | ||
IPLS | Maximum pulsed switch current, pulse <300 µs, 2% duty cycle | 6 | A | ||
TA | Operating free-air temperature(3) | –40 | 85 | °C | |
TJ | Maximum junction temperature | 125 | °C | ||
TLEAD | Maximum lead temperature (10-s soldering time) | 300 | °C | ||
TSTG | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VIN | Input voltage | 0.8 | VBIAS | V | ||
VBIAS | Bias voltage | 2.5 | 5.5 | V | ||
VON | ON voltage | 0 | 5.5 | V | ||
VOUT | Output voltage | VIN | V | |||
VIH | High-level input voltage, ON | VBIAS = 2.5 V to 5.5 V | 1.2 | 5.5 | V | |
VIL | Low-level input voltage, ON | VBIAS = 2.5 V to 5.5 V | 0 | 0.5 | V | |
CIN | Input capacitor | 1(1) | µF |
THERMAL METRIC(1) | TPS22967 | UNIT | |
---|---|---|---|
DSG [WSON] | |||
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 65.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 74.2 | |
RθJB | Junction-to-board thermal resistance | 35.4 | |
ψJT | Junction-to-top characterization parameter | 2.2 | |
ψJB | Junction-to-board characterization parameter | 36 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 12.8 |
PARAMETER | TEST CONDITIONS | TA | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|---|
POWER SUPPLIES AND CURRENTS | ||||||||
IIN(VBIAS-ON) | VBIAS quiescent current | IOUT = 0, VIN = VON = VBIAS = 5 V |
Full | 50 | 75 | µA | ||
IIN(VBIAS-OFF) | VBIAS shutdown current | VON = GND, VOUT = 0 V | Full | 2 | µA | |||
IIN(VIN-OFF) | VIN off-state supply current | VON = GND, VOUT = 0 V |
VIN = 5 V | Full | 0.2 | 8 | µA | |
VIN = 3.3 V | 0.02 | 3 | ||||||
VIN = 1.8 V | 0.01 | 2 | ||||||
VIN = 0.8 V | 0.005 | 1 | ||||||
ION | ON pin input leakage current | VON = 5.5 V | Full | 0.5 | µA | |||
RESISTANCE CHARACTERISTICS | ||||||||
RON | ON-state resistance | IOUT = –200 mA, VBIAS = 5 V |
VIN = 5 V | 25°C | 22 | 33 | mΩ | |
Full | 35 | |||||||
VIN = 3.3 V | 25°C | 22 | 33 | |||||
Full | 35 | |||||||
VIN = 1.8 V | 25°C | 22 | 33 | |||||
Full | 35 | |||||||
VIN = 1.5 V | 25°C | 22 | 33 | |||||
Full | 35 | |||||||
VIN = 1.2 V | 25°C | 22 | 33 | |||||
Full | 35 | |||||||
VIN = 0.8 V | 25°C | 22 | 33 | |||||
Full | 35 | |||||||
RPD | Output pulldown resistance | VIN = 5.0 V, VON = 0V, IOUT = 15 mA | Full | 225 | 300 | Ω |
PARAMETER | TEST CONDITIONS | TA | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|---|
POWER SUPPLIES AND CURRENTS | ||||||||
IIN(VBIAS-ON) | VBIAS quiescent current | IOUT = 0, VIN = VON = VBIAS = 2.5 V |
Full | 20 | 30 | µA | ||
IIN(VBIAS-OFF) | VBIAS shutdown current | VON = GND, VOUT = 0 V | Full | 2 | µA | |||
IIN(VIN-OFF) | VIN off-state supply current | VON = GND, VOUT = 0 V |
VIN = 2.5 V | Full | 0.01 | 3 | µA | |
VIN = 1.8 V | 0.01 | 2 | ||||||
VIN = 1.2 V | 0.005 | 2 | ||||||
VIN = 0.8 V | 0.003 | 1 | ||||||
ION | ON pin input leakage current | VON = 5.5 V | Full | 0.5 | µA | |||
RESISTANCE CHARACTERISTICS | ||||||||
RON | ON-state resistance | IOUT = –200 mA, VBIAS = 2.5 V |
VIN = 2.5 V | 25°C | 26 | 38 | mΩ | |
Full | 40 | |||||||
VIN = 1.8 V | 25°C | 26 | 38 | |||||
Full | 40 | |||||||
VIN = 1.5 V | 25°C | 25 | 38 | |||||
Full | 40 | |||||||
VIN = 1.2 V | 25°C | 24 | 38 | |||||
Full | 40 | |||||||
VIN = 0.8 V | 25°C | 24 | 38 | |||||
Full | 40 | |||||||
RPD | Output pulldown resistance | VIN = 2.5 V, VON = 0 V, IOUT = 1 mA | Full | 275 | 325 | Ω |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VIN = VON = VBIAS = 5 V, TA = 25ºC (UNLESS OTHERWISE NOTED) | ||||||
tON | Turnon time | RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF | 1325 | µs | ||
tOFF | Turnoff time | 10 | ||||
tR | VOUT rise time | 1625 | ||||
tF | VOUT fall time | 3.5 | ||||
tD | ON delay time | 500 | ||||
VIN = 0.8 V, VON = VBIAS = 5 V, TA = 25ºC (UNLESS OTHERWISE NOTED) | ||||||
tON | Turnon time | RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF | 600 | µs | ||
tOFF | Turnoff time | 80 | ||||
tR | VOUT rise time | 300 | ||||
tF | VOUT fall time | 5.5 | ||||
tD | ON delay time | 460 | ||||
VIN = 2.5 V, VON = 5 V, VBIAS = 2.5 V, TA = 25ºC (UNLESS OTHERWISE NOTED) | ||||||
tON | Turnon time | RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF | 2200 | µs | ||
tOFF | Turnoff time | 9 | ||||
tR | VOUT rise time | 2275 | ||||
tF | VOUT fall time | 3.1 | ||||
tD | ON delay time | 1075 | ||||
VIN = 0.8 V, VON = 5 V, VBIAS = 2.5 V, TA = 25ºC (UNLESS OTHERWISE NOTED) | ||||||
tON | Turn-on time | RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF | 1450 | µs | ||
tOFF | Turn-off time | 60 | ||||
tR | VOUT rise time | 875 | ||||
tF | VOUT fall time | 5.5 | ||||
tD | ON delay time | 1010 |
The TPS22967 device is a single-channel, 4-A load switch in an 8-pin WSON package. To reduce the voltage drop in high current rails, the device implements an ultra-low resistance N-channel MOSFET. The device has a programmable slew rate for applications that require specific rise time.
The device has very low leakage current during off state. This prevents downstream circuits from pulling high standby current from the supply. Integrated control logic, driver, power supply, and output discharge FET eliminates the need for any external components, which reduces solution size and bill of materials (BOM) count.
This section describes the integrated features for the TPS22967.
The ON pin controls the state of the switch. Asserting ON high enables the switch. ON is active high and has a low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard GPIO logic thresholds. It can be used with any microcontroller with 1.2 V or higher GPIO voltage. This pin cannot be left floating and must be driven either high or low for proper functionality.
A capacitor to GND on the CT pin sets the VOUT slew rate. The voltage on the CT pin can be as high as 12 V. Therefore, the minimum voltage rating for the CT capacitor must be 25 V for optimal performance. An approximate formula for the relationship between CT and slew rate is (Equation 1 accounts for 10% to 90% measurement on VOUT and does NOT apply for CT = 0 pF. Use Table 1 to determine rise times for when CT = 0 pF):
where
Rise time can be calculated by multiplying the input voltage by the slew rate. Table 1 contains rise time values measured on a typical device. Rise times shown below are only valid for the power-up sequence where VIN and VBIAS are already in steady state condition, and the ON pin is asserted high.
CTx (pF) | RISE TIME (µs) 10% - 90%, CL = 0.1 µF, CIN = 1 µF, RL = 10 Ω TYPICAL VALUES at 25°C, 25 V X7R 10% CERAMIC CAPACITOR |
||||||
---|---|---|---|---|---|---|---|
5 V | 3.3 V | 1.8 V | 1.5 V | 1.2 V | 1.05 V | 0.8 V | |
0 | 127 | 93 | 62 | 55 | 51 | 46 | 42 |
220 | 475 | 314 | 188 | 162 | 141 | 125 | 103 |
470 | 939 | 637 | 359 | 304 | 255 | 218 | 188 |
1000 | 1869 | 1229 | 684 | 567 | 476 | 414 | 344 |
2200 | 4020 | 2614 | 1469 | 1211 | 1024 | 876 | 681 |
4700 | 8690 | 5746 | 3167 | 2703 | 2139 | 1877 | 1568 |
10000 | 18360 | 12550 | 6849 | 5836 | 4782 | 4089 | 3449 |
The TPS22967 includes a Quick Output Discharge (QOD) feature. When the switch is disabled, a discharge resistor is connected between VOUT and GND. This resistor has a typical value of 225 Ω and prevents the output from floating while the switch is disabled.
Table 2 describes the functional state of the load switch as determined by the ON pin.
ON | VIN to VOUT | VOUT to GND |
---|---|---|
L | Off | On |
H | On | Off |