SLVSBM6B December   2012  – November 2015 TPS22981

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Dissipation Ratings
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Current Limit
      2. 7.3.2 Current Limit Threshold
      3. 7.3.3 Maximum Current Limit Threshold
      4. 7.3.4 Transition Delays
      5. 7.3.5 Digital Control Signals
      6. 7.3.6 Overcurrent Limit and Short-Circuit Protection
      7. 7.3.7 Reverse Current Protection
      8. 7.3.8 Reverse Current Blocking
      9. 7.3.9 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 UVLO and Enable
      2. 7.4.2 FAULTZ Output
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input Inductive Bounce
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VI Input voltage on V3P3 (VDD)(2) –0.3 3.6 V
Input voltage on EN, HV_EN, ENHVU, ISET_V3P3, ISET_S0, ISET_S3, S0(2) –0.3 V3P3 + 0.3
Output voltage on FAULTZ –0.3 V3P3 + 0.3
Input voltage on VHV(2) –0.3 20
Output voltage at OUT(2) –0.3 20
Voltage between VHV and OUT (VVHV – VOUT) –7 20
Output voltage at V3P3OUT(2) –0.3 V3P3 + 0.3
TA Operating ambient temperature(3) –40 85 °C
TJ (MAX) Maximum operating junction temperature 110 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) In applications where high-power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(max)], the maximum power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA(max) = TJ(max) – (θJA × PD(max))

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V3P3 Supply voltage 3 3.6 V
VHV 4.5 19.8 V
ILIM3P3OUT V3P3OUT switch current 0 500 mA
VIH Input logic high EN, HV_EN, ENHVU, S0 V3P3 – 0.6 V3P3 V
VIL Input logic low EN, HV_EN, ENHVU, S0 0 0.6 V
RSET_V3P3 3.3-V switch current limit set resistance 26.7 402 kΩ
RSET_S0 VHV switch current limit in S0 mode set resistance 26.7 402 kΩ
RSET_S3 VHV switch current limit in S3 mode set resistance 26.7 402 kΩ
RFAULTZ FAULTZ pullup resistance to V3P3 30 kΩ

6.4 Thermal Information

THERMAL METRIC(1) TPS22981 UNIT
RGP (VQFN)
20 PINS
RθJA Junction-to-ambient thermal resistance 39.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Unless otherwise noted the specification applies over the VDD range and operating junction temp –40°C ≤ TJ ≤ 85°C. Typical values are for V3P3 = 3.3 V, VHV = 15 V, and TJ = 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
V3P3 V3P3 input voltage range 3 3.3 3.6 V
VHV VHV input voltage range 4.5 19.8 V
IVHVACT Active quiescent current from VHV HV_EN = 1, EN = 1 150 µA
IVHVSD Shutdown leakage current from VHV HV_EN = 0, EN = 0 or 1 60 µA
IDDACT Active quiescent current from V3P3 EN = 1, HV_EN = 0 500 µA
IDDACTHV EN = 1, HV_EN = 1 500 µA
IDDSD Shutdown quiescent current from V3P3 EN = 0, OUT = 0 V 30 µA
IDIS OUT discharge current EN = 1, VHV = 5V, HV_EN = 1→0 5 10 mA
IIN HV_EN, EN, ENHVU, S0, S3 input pin leakage V = 0 V 1 µA
V = V3P3 1
SWITCH AND RESISTANCE CHARACTERISTICS
RSHV VHV switch resistance VHV = 5V to 18V, IVHV = 0.9A 250 mΩ
RS3P3 V3P3 switch resistance V3P3 = 3.3 V, IV3P3 = 0.9 A 125 mΩ
RS3P3BYP V3P3 bypass switch resistance V3P3 = 3.3 V, IV3P3 = 500 mA 500 mΩ
ROUTDIS OUT pulldown resistance when disabled EN = 0 1.5 2.5 4 kΩ
VOLFAULTZ FAULTZ VOL IFAULTZ = 250 µA 0.6 V
VOLTAGE THRESHOLDS
VHVUVLO VHV undervoltage lockout VHV Input falling 3.6 4 V
VHV Input rising 4 4.3
V3P3UVLO V3P3 undervoltage lockout V3P3 Input falling 1.8 2.25 V
V3P3 Input rising 2.25 2.5
VFAULTZVAL V3P3 voltage for valid FAULTZ EN = 1 1.8 V
THERMAL SHUTDOWN
TSD Shutdown temperature 110 120 130 °C
TSDHYST Shutdown hysteresis 10 °C
CURRENT LIMIT
ILIMHV VHV switch current limit state S0 or S3 RSET_S0,3 = 402 kΩ(1) 80 100 120 mA
RSET_S0,3 = 80.6 kΩ(1) 446 496 546
RSET_S0,3 = 26.7 kΩ(1) 1423 1498 1573
ILIMVHVMAX Maximum VHV switch current limit RSET_S0,3 = 0 Ω 1.8 2.4 3.1 A
ILIM3P3 V3P3 switch current limit RSET_V3P3 = 402 kΩ(1) 80 100 120 mA
RSET_V3P3 = 80.6 kΩ(1) 446 496 546
RSET_V3P3 = 26.7 kΩ(1) 1423 1498 1573
ILIM3P3MAX Maximum V3P3 switch current limit RSET_V3P3 = 0Ω 1.8 2.4 3.1 A
IREV3P3 V3P3 switch reverse current limit 10 40 85 mA
TV3P3RC V3P3 switch reverse current response time VOUT = V3P3→V3P3 + 20 mV 100 µs
TVHVSC VHV switch short circuit response time COUT ≤ 20 pF 8 µs
TV3P3SC V3P3 switch short circuit response time COUT ≤ 20 pF 8 µs
TRANSITION DELAYS
T3P3OFF VHV to V3P3 OFF-time COUT = 1.1 µF, EN = 1, HV_EN = 1→0 6 ms
T0-3.3V 0-V to 3.3-V ramp time COUT ≤ 20 pF 6 ms
T3.3V-VHV 3.3-V to VHV ramp time COUT ≤ 20 pF 6 ms
TVHV-3.3V VHV to 3.3-V ramp time COUT ≤ 20 pF 23 ms
TLIM Overcurrent response time COUT ≤ 20 pF, IOUT = 6 A 0.5 ms
(1) Equation 1 is used to calculate the required resistance for a given minimum ILIM. The nearest 1% resistance is chosen and the corresponding ILIM variance is shown.

6.6 Dissipation Ratings

PACKAGE POWER RATING(1)
TA = 25°C		 POWER RATING(1)
TA = 70°C		 DERATING FACTOR ABOVE(2)
TA = 25°C
RGP 2.16 W 1.02 W 25.4 mW/°C
(1) Simulated with high-K board
(2) Maximum power dissipation is a function of TJ(max), θJA and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) – TA) / θJA.