SLVSGT2A June   2022  – December 2022 TPS22995H-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VBIAS = 5 V)
    6. 6.6 Electrical Characteristics (VBIAS = 3.3 V)
    7. 6.7 Electrical Characteristics (VBIAS = 1.5 V)
    8. 6.8 Switching Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 ON and OFF Control
      2. 8.3.2 Quick Output Discharge (QOD)
      3. 8.3.3 Adjustable Slew Rate
      4. 8.3.4 Thermal Shutdown
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.3 Adjustable Slew Rate

A resistor to GND on the RT pin sets the slew rate, and the higher the resistor the lower the slew rate. Rise times are shown below.

Table 8-2 Rise Time vs RT vs VIN

RT Resistor

VIN = 5 VVIN = 3.3 VVIN = 1.8 VVIN = 1.2 VVIN = 0.8 V

GND

102 µs79 µs55 µs42 µs33 us
1 kΩ166 µs129 µs89 µs68 µs53 us
5 kΩ790 µs607 µs415 µs318 µs242 us
10 kΩ1520 µs1180 µs800 µs613 µs465 us
Open4860 µs3750 µs2560 µs1960 µs1490 us
The following equation can be used to estimate the rise time for different VIN and RT resistors:

tR = (0.0246 VIN + 0.0308) × RT + 3.3219 VIN + 6.7312

where

  • tR = Rise time in µs.
  • VIN = Input voltage in V.
  • RT = RT Resistor in Ω.