SLVSH99 December   2023 TPS22996

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics (TPS22996, TPS22996N)
    7. 6.7 Typical Characteristics: DC
    8. 6.8 Typical Characteristics: AC
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 ON and OFF Control
      2. 8.3.2 Input Capacitor (Optional)
      3. 8.3.3 Output Capacitor (Optional)
      4. 8.3.4 Quick Output Discharge (QOD)
      5. 8.3.5 Thermal Shutdown
      6. 8.3.6 Adjustable Rise Time
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
      3. 9.4.3 Power Dissipation
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DRL|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2 Detailed Design Procedure

The design in this example is trying to achieve 1000 μs rise time for power sequencing, with both VBIAS and VIN to be 5 V. From Table 8-1, the ION needs to be between 20 μA and 100 μA. To find the ION needed to achieve 1000 μs rise time, linear interpolation can be used to estimate as below:

Equation 2. TR = (TR2 − TR1) / (ION2 − ION1) * (ION − ION1) + TR1

where:

  • TR is the desired TR, which is 1000 μs
  • ION is the desired ION
  • TR1 is the first TR used for linear interpolation, which is 2580 μs
  • TR2 is the second TR used for linear interpolation, which is 688 μs
  • ION1 is the first ION used for linear interpolation, which is 20 μA
  • ION2 is the second ION used for linear interpolation, which is 100 μA

ION is calculated to be 86.8 μA. To find the RT value, plug in the parameters in Equation 1.

RT = 1000 × (5 V − 1.2 V) / 86.8 μA − 11.5 kΩ = 32.2 kΩ

By using the standard resistor value closest to 32.2 kΩ, the typical rise time can be calculated for the actual resistor value used on board.