SLVSER6B May   2020  – November 2020 TPS23730

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: DC-DC Controller Section
    6. 7.6 Electrical Characteristics PoE
    7.     14
    8. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  CLSA, CLSB Classification
      2. 8.3.2  DEN Detection and Enable
      3. 8.3.3  APD Auxiliary Power Detect
      4. 8.3.4  PPD Power Detect
      5. 8.3.5  Internal Pass MOSFET
      6. 8.3.6  TPH, TPL and BT PSE Type Indicators
      7. 8.3.7  DC-DC Controller Features
        1. 8.3.7.1 VCC, VB, VBG and Advanced PWM Startup
        2.       28
        3. 8.3.7.2 CS, Current Slope Compensation and Blanking
        4. 8.3.7.3 COMP, FB, EA_DIS, CP, PSRS and Opto-less Feedback
        5. 8.3.7.4 FRS Frequency Setting and Synchronization
        6. 8.3.7.5 DTHR and Frequency Dithering for Spread Spectrum Applications
        7. 8.3.7.6 SST and Soft-Start of the Switcher
        8. 8.3.7.7 SST, I_STP, LINEUV and Soft-Stop of the Switcher
      8. 8.3.8  Switching FET Driver - GATE, GTA2, DT
      9. 8.3.9  EMPS and Automatic MPS
      10. 8.3.10 VDD Supply Voltage
      11. 8.3.11 RTN, AGND, GND
      12. 8.3.12 VSS
      13. 8.3.13 Exposed Thermal pads - PAD_G and PAD_S
    4. 8.4 Device Functional Modes
      1. 8.4.1  PoE Overview
      2. 8.4.2  Threshold Voltages
      3. 8.4.3  PoE Start-Up Sequence
      4. 8.4.4  Detection
      5. 8.4.5  Hardware Classification
      6. 8.4.6  Maintain Power Signature (MPS)
      7. 8.4.7  Advanced Start-Up and Converter Operation
      8. 8.4.8  Line Undervoltage Protection and Converter Operation
      9. 8.4.9  PD Self-Protection
      10. 8.4.10 Thermal Shutdown - DC-DC Controller
      11. 8.4.11 Adapter ORing
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Detailed Design Procedure
          1. 9.2.1.1.1  Input Bridges and Schottky Diodes
          2. 9.2.1.1.2  Input TVS Protection
          3. 9.2.1.1.3  Input Bypass Capacitor
          4. 9.2.1.1.4  Detection Resistor, RDEN
          5. 9.2.1.1.5  Classification Resistor, RCLSA and RCLSB.
          6. 9.2.1.1.6  Dead Time Resistor, RDT
          7. 9.2.1.1.7  APD Pin Divider Network, RAPD1, RAPD2
          8. 9.2.1.1.8  PPD Pin Divider Network, RPPD1, RPPD2
          9. 9.2.1.1.9  Setting Frequency (RFRS) and Synchronization
          10. 9.2.1.1.10 Bias Supply Requirements and CVCC
          11. 9.2.1.1.11 TPH, TPL, and BT Interface
          12. 9.2.1.1.12 Secondary Soft Start
          13. 9.2.1.1.13 Frequency Dithering for Conducted Emissions Control
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 EMI Containment
    4. 11.4 Thermal Considerations and OTSD
    5. 11.5 ESD
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information
9.2.1.1.1 Input Bridges and Schottky Diodes

Using Schottky diodes instead of PN junction diodes for the PoE input bridges will reduce the power loss by about 30%. These are often used to maximize the efficiency when FET bridge architectures are not used.

Schottky diode leakage current and different input bridge architectures can impact the detection signature. Setting reasonable expectations for the temperature range over which the detection signature is accurate is the simplest solution. Adjusting RDEN slightly may also help meet the requirement.

A general recommendation for the input rectifiers are 2 A, 100-V rated discrete or bridge schottky diodes.

The TPS23730EVM-093 allows the option of either a discrete schottky bridge or a FET-Diode bridge for 1-2% higher overall system efficiency.