SLVSER8A June 2020 – September 2020 TPS23734
PRODUCTION DATA
Using Schottky diodes instead of PN junction diodes for the PoE input bridges will reduce the power loss by about 30%. These are often used to maximize the efficiency when FET bridge architectures are not used.
Schottky diode leakage current and different input bridge architectures can impact the detection signature. Setting reasonable expectations for the temperature range over which the detection signature is accurate is the simplest solution. Adjusting RDEN slightly may also help meet the requirement.
A general recommendation for the input rectifiers are 2 A, 100-V rated discrete or bridge schottky diodes.
The TPS23734-EVM-094 allows the option of either a discrete schottky bridge or a FET-Diode bridge for 1-2% higher overall system efficiency.