SLVS646B September   2006  – November 2018 TPS2376-H

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Circuit
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 ESD Ratings IEC
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO)
      2. 8.3.2 Programmable Inrush Current Limit and Fixed Operational Current Limit
      3. 8.3.3 Power Good
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Internal Thresholds
      2. 9.1.2 Detection
      3. 9.1.3 Classification
    2. 9.2 Typical Application
      1. 9.2.1 External Components
        1. 9.2.1.1 Detection Resistor and UVLO Divider
        2. 9.2.1.2 Magnetics
        3. 9.2.1.3 Input Diodes or Diode Bridges
        4. 9.2.1.4 Input Capacitor
        5. 9.2.1.5 Load Capacitor
        6. 9.2.1.6 Transient Suppressor
  10. 10Power Supply Recommendations
    1. 10.1 Maintain Power Signature
    2. 10.2 DC/DC Converter Startup
    3. 10.3 Auxiliary Power Source ORing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Protection
    4. 11.4 ESD
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

12.5 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.