SLUS634F
November 2004 – January 2022
TPS2384
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Timing Requirements
6.7
Typical Characteristics
7
Parameter Measurement Information
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagrams
8.3
Feature Description
8.3.1
PMM Faults
8.3.2
Watchdog Timer
8.4
Device Functional Modes
8.4.1
Auto Mode
8.4.2
Auto Mode Functional Description
8.4.2.1
AM Discovery
8.4.2.2
AM Classification
8.4.2.3
AM Power Delivery
8.4.3
AM Faults and INTB Output
8.4.4
Over and Undervoltage Fault
8.4.5
Over Current or Current Limit Faults
8.4.6
Undercurrent Fault (DC Modulated Disconnect)
8.4.7
Power Management Mode (PMM)
8.4.7.1
13 PMM Functions
8.4.8
PMM Discovery 1
8.4.9
PMM Discovery 2
8.4.10
PMM Classification
8.4.11
PMM Legacy
8.4.12
PMM Rup Pwr
8.4.13
PMM RDWN
8.5
Programming
8.5.1
I2C Interface Description
8.5.2
Start and Stop
8.5.3
Chip Address
8.5.4
Chip Addressing
8.5.5
Data Write Cycle
8.5.6
Port and Register Cycle
8.5.7
Data Read Cycle
8.6
Register Maps
8.6.1
Register/Port Addressing Map
8.6.2
Common Read, Register Select
8.6.3
Common Write, Register Select = 1111 (Test Register)
8.6.4
Common Control Write, Register Select = 0001
8.6.5
Port Control Write 1, Register Select = 0010 (One Per Port)
8.6.6
Port Control Write 2, Register Select = 0011 (One Per Port)
8.6.7
Port Status Read 1, Register Select = 0100 (One Per Port)
8.6.8
Port Status Read 2, Register Select = 0101 (One Per Port)
8.6.9
A/D Results Registers (Discovery Current, Voltage, Current and Temperature)
8.6.9.1
Discovery Current — Lower Bits, Register Select = 0110 (One Per Port)
8.6.9.2
Discovery Current — Upper Bits, Register Select = 0111 (One Per Port)
8.6.9.3
Voltage — Lower Bits, Register Select = 1000 (One Per Port)
8.6.9.4
Voltage — Upper Bits, Register Select = 1001 (One Per Port)
8.6.9.5
Current — Lower Bits, Register Select = 1010 (One Per Port)
8.6.9.6
Current — Upper Bits, Register Select = 1011 (One Per Port)
8.6.9.7
Temperature — Lower Bits, Register Select = 1100 (One Per Port)
8.6.9.8
Temperature — Upper Bits, Register Select = 1101 (One Per Port)
9
Application and Implementation
9.1
Application Information
9.1.1
AC Disconnect Drive Circuit Detail
9.1.2
Connection of Unused Ports and Pins
9.1.3
Opto-isolator Interface
9.1.4
Port Protection from Electrical Transients
9.2
Typical Application
9.2.1
Design Requirements
9.2.2
Detailed Design Procedure
9.2.2.1
Power Pin Bypass Capacitors
9.2.2.2
Per Port Components
9.2.2.3
Bias and Timing
9.2.3
Application Curves
10
Power Supply Recommendations
11
Layout
11.1
Layout Guidelines
11.1.1
Local Circuits
11.1.2
System Protection Circuits
11.2
Layout Example
11.3
Thermal Consideration
12
Device and Documentation Support
12.1
Documentation Support
12.1.1
Related Documentation
12.2
Receiving Notification of Documentation Updates
12.3
Support Resources
12.4
Trademarks
12.5
Electrostatic Discharge Caution
12.6
Glossary
13
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
PAP|64
MPQF071C
PJD|64
MPQF072D
Thermal pad, mechanical data (Package|Pins)
PAP|64
PPTD012N
PJD|64
PPTD020B
Orderable Information
slus634f_oa
slus634f_pm
11.1.1
Local Circuits
V48: Place the V48 capacitor from V48 to AG1 as close to the device as possible.
V10: Place the V10 capacitor from V10 to AG1 as close to the device as possible.
V6.3: Place the V6.3 capacitor from V6.3 to AG1 as close to the device as possible.
V3.3: Place the V3.3 capacitor from V3.3 to DG as close to the device as possible.
V2.5: Place the V2.5 capacitor from V2.5 to RG as close to the device as possible.
RBIAS: Place the RBIAS resistor from RBIAS to RG on PCB topside as close to the device as possible.
CT: Place the CT capacitor from CT to RG on PCB topside as close to the device as possible.
CINTx: Place the CINTx capacitors from CINTx to RG on PCB topside as close to the device as possible.