SLVSAL2G January 2011 – November 2015 TPS24710 , TPS24711 , TPS24712 , TPS24713
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Input voltage range | EN, FLT(2)(3), FLTb(2)(4), GATE, OUT, PG(2)(3), PGb(2)(4), SENSE, VCC | –0.3 | 30 | V | |
PROG(2) | –0.3 | 3.6 | |||
SENSE to VCC | –0.3 | 0.3 | |||
TIMER | –0.3 | 5 | |||
Sink current | FLT, PG, FLTb, PGb | 5 | mA | ||
Source current | PROG | Internally limited | |||
Temperature | Maximum junction, TJ | Internally limited | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | All pins except PG and PGb | ±2000 | V |
PG, PGb | ±500 | V | |||
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | V |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
Input voltage range | SENSE, VCC | 2.5 | 18 | V | |
EN, FLT, FLTb, PG, PGb, OUT | 0 | 18 | |||
Sink current | FLT, FLTb, PG, PGb | 0 | 2 | mA | |
Resistance | PROG | 4.99 | 500 | kΩ | |
External capacitance | TIMER | 1 | nF | ||
Operating junction temperature range, TJ | –40 | 125 | °C |
THERMAL METRIC(1) | TPS2471/x | UNIT | |
---|---|---|---|
MSOP (10) PINS | |||
RθJA | Junction-to-ambient thermal resistance | 166.5 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 41.8 | |
RθJB | Junction-to-board thermal resistance | 86.1 | |
ψJT | Junction-to-top characterization parameter | 1.5 | |
ψJB | Junction-to-board characterization parameter | 84.7 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a |
PARAMETER | CONDITIONS | MIN | NOM | MAX | UNIT |
---|---|---|---|---|---|
VCC | |||||
UVLO threshold, rising | 2.2 | 2.32 | 2.45 | V | |
UVLO threshold, falling | 2.1 | 2.22 | 2.35 | V | |
UVLO hysteresis(1) | 0.1 | V | |||
Supply current | Enabled ― IOUT + IVCC + ISENSE | 1 | 1.4 | mA | |
Disabled(1) ― EN = 0 V, IOUT + IVCC + ISENSE | 0.45 | mA | |||
EN | |||||
Threshold voltage, falling | 1.2 | 1.3 | 1.4 | V | |
Hysteresis(1) | 50 | mV | |||
Input leakage current | 0 V ≤ VEN ≤ 30 V | –1 | 0 | 1 | µA |
FLT, FLTb | |||||
Output low voltage | Sinking 2 mA | 0.11 | 0.25 | V | |
Input leakage current | VFLT = 0 V, 30 V | –1 | 0 | 1 | µA |
VFLTb = 0 V, 30 V | |||||
PG, PGb | |||||
Threshold | V(SENSE – OUT) rising, PG going low | 140 | 240 | 340 | mV |
V(SENSE – OUT) rising, PGb going high | |||||
Hysteresis(1) | Measured V(SENSE – OUT) falling, PG going high | 70 | mV | ||
Measured V(SENSE – OUT) falling, PGb going low | |||||
Output low voltage | Sinking 2 mA | 0.11 | 0.25 | V | |
Input leakage current | VPG = 0 V, 30 V | –1 | 0 | 1 | µA |
VPGb = 0 V, 30 V | |||||
PROG | |||||
Bias voltage | Sourcing 10 µA | 0.65 | 0.678 | 0.7 | V |
Input leakage current | VPROG = 1.5 V | –0.2 | 0 | 0.2 | µA |
TIMER | |||||
Sourcing current | VTIMER = 0 V | 8 | 10 | 12 | µA |
Sinking current | VTIMER = 2 V | 8 | 10 | 12 | µA |
VEN = 0 V, VTIMER = 2 V | 2 | 4.5 | 7 | mA | |
Upper threshold voltage | 1.30 | 1.35 | 1.40 | V | |
Lower threshold voltage | 0.33 | 0.35 | 0.37 | V | |
Timer activation voltage | Raise GATE until ITIMER sinking, measure V(GATE – VCC), VCC = 12 V | 5 | 5.9 | 7 | V |
Bleed-down resistance | VENSD = 0 V, VTIMER = 2 V | 70 | 104 | 130 | kΩ |
OUT | |||||
Input bias current | VOUT = 12 V | 16 | 30 | µA | |
GATE | |||||
Output voltage | VOUT = 12 V | 23.5 | 25.8 | 28 | V |
Clamp voltage | Inject 10 µA into GATE, measure V(GATE – VCC) | 12 | 13.9 | 15.5 | V |
Sourcing current | VGATE = 12 V | 20 | 30 | 40 | µA |
Sinking current | Fast turnoff, VGATE = 14 V | 0.5 | 1 | 1.4 | A |
Sustained, VGATE = 4 V to 23 V | 6 | 11 | 20 | mA | |
In inrush current limit, VGATE = 4 V to 23 V | 20 | 30 | 40 | µA | |
Pulldown resistance | Thermal shutdown | 14 | 20 | 26 | kΩ |
SENSE | |||||
Input bias current | VSENSE = 12 V, sinking current | 30 | 40 | µA | |
Current limit threshold | VOUT = 12 V | 22.5 | 25 | 27.5 | mV |
Power limit threshold | VOUT = 7 V, RPROG = 50 kΩ | 10.1 | 11.6 | 13.1 | mV |
VOUT = 2 V, RPROG = 25 kΩ | 10.1 | 11.6 | 13.1 | ||
Fast-trip threshold | 52 | 60 | 68 | mV | |
OTSD | |||||
Threshold, rising | 130 | 140 | °C | ||
Hysteresis(1) | 10 | °C |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
EN | |||||
Turnoff time | EN ↓ to VGATE < 1 V, CGATE = 33 nF | 20 | 60 | 150 | µs |
Deglitch time | EN ↑ | 8 | 14 | 18 | µs |
Disable delay | EN ↓ to GATE ↓, CGATE = 0, tpff50–90, See Figure 1 | 0.1 | 0.4 | 1 | µs |
PG, PGb | |||||
Delay (deglitch) time | Rising or falling edge | 2 | 3.4 | 6 | ms |
GATE | |||||
Fast-turnoff duration | 8 | 13.5 | 18 | µs | |
Turn on delay | VCC rising to GATE sourcing, tprr50-50, See Figure 2 | 100 | 250 | µs | |
SENSE | |||||
Fast-turnoff duration | 8 | 13.5 | 18 | µs | |
Fast-turnoff delay(1) | V(VCC – SENSE) = 80 mV, CGATE = 0 pF, tprf50–50, See Figure 3 | 200 | ns |