SLUSB18A JUNE   2012  – August 2016 TPS2511

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Overcurrent Protection
      2. 7.3.2 Current Limit Threshold
      3. 7.3.3 Current-Sensing Report (CS)
      4. 7.3.4 Undervoltage Lockout (UVLO) and Enable (EN)
      5. 7.3.5 Soft Start, Reverse Blocking, and Discharge Output
      6. 7.3.6 Thermal Sense
      7. 7.3.7 VBUS Voltage Drop Compensation
      8. 7.3.8 Divide Mode Selection of 5-W and 10-W USB Chargers
    4. 7.4 Device Functional Modes
      1. 7.4.1 Dedicated Charging Port (DCP)
        1. 7.4.1.1 Short the D+ Line to the D- Line
        2. 7.4.1.2 Divider1 (DCP Applying 2 V on D+ Line and 2.7 V on D- Line) or Divider2 (DCP Applying 2.7 V on D+ Line and 2 V on D- Line)
        3. 7.4.1.3 Applying 1.2 V to the D+ Line and 1.2 V to the D- Line
      2. 7.4.2 DCP Auto-Detect
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input and Output Capacitance
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage IN Supply voltage –0.3 7 V
EN, ILIM_SET Input voltage –0.3 7
OUT, CS –0.3 7
IN to OUT –7 7
DP output voltage DM output –0.3 IN+0.3 or 5.7
DP input voltage DM input –0.3 IN+0.3 or 5.7
Current DP input current, DM input current Continuous output sink current 35 mA
DP output current, DM output current Continuous output source current 35
CS Continuous output sink current 10
ILIM_SET Continuous output source current Internally limited
Temperature Operating junction temperature, TJ Internally limited
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) All pins except 6 and 7 ±2000 V
Pins 6 and 7 ±7500
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

voltages are referenced to GND (unless otherwise noted), positive current are into pins.
MIN MAX UNIT
VIN Input voltage of IN 4.5 5.5 V
VCS Input voltage of CS 0 5.5
VEN Input voltage of EN 0 5.5
VDP DP data line input voltage 0 5.5
VDM DM data line input voltage 0 5.5
IDP Continuous sink/source current ±10 mA
IDM Continuous sink/source current ±10
ICS Continuous sink current 2
IOUT Continuous output current of OUT 2.2 A
RILIM_SET A resistor of current limit, ILIM_SET to GND 16.9 750
TJ Operating junction temperature –40 125 ºC

6.4 Thermal Information

THERMAL METRIC(1) TPS2511 UNIT
DGN
(MSOP-PowerPAD)
8 PINS
RθJA Junction-to-ambient thermal resistance 65.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 53.3 °C/W
RθJB Junction-to-board thermal resistance 36.9 °C/W
ψJT Junction-to-top characterization parameter 3.9 °C/W
ψJB Junction-to-board characterization parameter 36.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 13.4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

Conditions are –40°C ≤ (TJ = TA) ≤ 125°C, 4.5 V ≤ VIN ≤ 5.5 V, VEN = VIN and RILIM_SET = 22.1 kΩ. Positive current are into pins. Typical values are at 25°C. All voltages are with respect to GND (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SWITCH
RDS(on) Static drain-source ON-state resistance IOUT = 2 A 70 120
IOUT = 2 A, –40ºC ≤ (TJ =TA) ≤ 85ºC 70 105
IOUT = 2 A, TJ =TA = 25ºC 70 84
IREV Reverse leakage current VOUT = 5.5 V, VIN = VEN = 0 V 0.01 2 µA
DISCHARGE
RDCHG Discharge resistance VOUT = 4 V 400 500 630 Ω
CURRENT LIMIT
IOS OUT short-circuit current limit RILIM_SET = 44.2 kΩ 1060 1160 1270 mA
RILIM_SET = 22.1 kΩ 2110 2300 2550
RILIM_SET = 16.9 kΩ 2760 3025 3330
HICCUP MODE
VOUT_SHORT OUT voltage threshold of going into hiccup mode VIN = 5 V, RILIIM_SET = 210 kΩ 3.6 3.8 4.1 V
UNDERVOLTAGE LOCKOUT
VUVLO IN UVLO threshold voltage, rising 3.9 4.1 4.3 V
Hysteresis(1) 100 mV
SUPPLY CURRENT
IIN_OFF Disabled, IN supply current VEN = 0 V, VIN = 5.5 V,
–40ºC ≤ TJ ≤ 85ºC
0.1 2 µA
IIN_ON Enabled, IN supply current VEN = VIN, RILIM_SET = 210 kΩ 180 230
THERMAL SHUTDOWN
Temperature rising threshold(1) Not in current limit 155 ºC
In current limit 135
Hysteresis (1) 10
OUT CURRENT DETECTION
IHCC_TH Load detection current threshold, rising (1) RILIM_SET = 22.1 kΩ 1060 mA
RILIM_SET = 44.2 kΩ 560
IHCC_TH_HYS Load detection current Hysteresis(1) RILIM_SET = 22.1 kΩ 230 mA
RILIM_SET = 44.2 kΩ 120
VCS CS output active-low voltage(1) ICS = 1 mA 0 80 140 mV
ENABLE INPUT (EN)
VEN_TRIP EN threshold voltage, falling 0.9 1.1 1.65 V
VEN_TRIP_HYS Hysteresis 100 200 300 mV
IEN Leakage current VEN = 0 V or VEN = 5.5 V –0.5 0.5 µA
BC 1.2 DCP MODE (SHORT MODE)
RDPM_SHORT DP and DM shorting resistance VDP = 0.8 V, IDM = 1 mA 125 200 Ω
RDCHG_SHORT Resistance between DP/DM and GND VDP = 0.8 V 400 700 1300
VDPL_TH_DETACH Voltage threshold on DP under which the device goes back to divider mode 310 330 350 mV
VDPL_TH_DETACH_HYS Hysteresis 50 (1) mV
DIVIDER MODE
VDP_2.7V DP output voltage VIN = 5 V 2.57 2.7 2.84 V
VDM_2.0V DM output voltage VIN = 5 V 1.9 2 2.1
RDP_PAD1 DP output impedance IDP = –5 µA 24 30 40
RDM_PAD1 DM output impedance IDM = –5 µA 24 30 40
1.2 V / 1.2 V MODE
VDP_1.2V DP output voltage VIN = 5 V 1.12 1.2 1.28 V
VDM_1.2V DM output voltage VIN = 5 V 1.12 1.2 1.28 V
RDP_PAD2 DP output impedance IDP = –5 uA 80 105 130
RDM_PAD2 DM output impedance IDM = –5 uA 80 105 130
(1) Specified by design. Not production tested.

6.6 Switching Characteristics

Conditions are –40°C ≤ (TJ = TA) ≤ 125°C, 4.5 V ≤ VIN ≤ 5.5 V, VEN = VIN and RILIM_SET = 22.1 kΩ. Positive current are into pins. Typical values are at 25°C. All voltages are with respect to GND (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SWITCH
tr OUT voltage rise time CL = 1 µF, RL = 100 Ω, VIN = 5 V see Figure 1, Figure 3 1 1.5 ms
tf OUT voltage fall time CL = 1 µF, RL = 100 Ω, VIN = 5 V see Figure 1, Figure 3 0.2 0.35 0.5
CURRENT LIMIT
tIOS Short circuit response time(1) VIN = 5 V, RL = 50 mΩ, 2 inches lead length, See Figure 4 1.5 µs
HICCUP MODE
tOS_DEG ON-time of hiccup mode(1) VIN = 5 V, RL = 0 16 ms
tSC_TURN_OFF OFF-time of hiccup mode(1) VIN = 5 V, RL = 0 12 s
OUT CURRENT DETECTION
tCS_EN CS deglitch time during turning on(1) ICS = 1 mA 8 ms
ENABLE INPUT (EN)
ton OUT voltage turnon time CL = 1 µF, RL = 100 Ω,
see Figure 1, Figure 2
2.6 5 ms
toff OUT voltage turnoff time 1.7 3
(1) Specified by design. Not production tested.
TPS2511 rise_fall_tst_lusb18.gif Figure 1. Output Rise and Fall Test Load
TPS2511 ena_tim_lusb18.gif Figure 2. Enable Timing, Active High Enable
TPS2511 pwr_on_off_lusb18.gif Figure 3. Power On and Power Off
TPS2511 short_cir_lusb18.gif Figure 4. Output Short-Circuit Parameters

6.7 Typical Characteristics

TPS2511 vo_tj_lusb18.gif
Figure 5. DP and DM Output Voltage vs Temperature
TPS2511 ena_cur_tj_lusb18.gif
Figure 7. Supply Current Enabled vs Temperature
TPS2511 pwr_on_tj_lusb18.gif
Figure 9. Power Switch ON-Resistance (RDS(ON)) vs Temperature
TPS2511 dis_cur_tj_lusb18.gif
Figure 6. Supply Current Disabled vs Temperature
TPS2511 icc_tj_lusb18.gif
Figure 8. Current Limit vs Temperature