SLVSCJ0E March 2014 – June 2021 TPS25200
PRODUCTION DATA
Input and output capacitance improves the performance of the device; the actual capacitance must be optimized for the particular application. For all applications, a 0.1-µF or greater ceramic bypass capacitor between IN and GND is recommended as close to the device as possible for local noise decoupling.
When VIN ramp up exceed 7.6 V, VOUT follows VIN until the TPS25200 turns off the internal MOSFET after t(OVLO_off_delay). Since t(OVLO_off_delay) largely depends on the VIN ramp rate, VOUT sees some peak voltage. Increasing the output capacitance can lower the output peak voltage as shown in Figure 9-3.