SLVSCC6A March   2014  – June 2014 TPS2561A-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Functions and Configurations
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Overcurrent Conditions
      2. 9.3.2 FAULTx Response
      3. 9.3.3 Thermal Sense
    4. 9.4 Device Functional Mode
      1. 9.4.1 Undervoltage Lockout (UVLO)
      2. 9.4.2 Enable (ENx)
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Current Limit
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Determine Design Parameters
          2. 10.2.1.2.2 Programming the Current-Limit Threshold
          3. 10.2.1.2.3 Designing Above a Minimum Current Limit
          4. 10.2.1.2.4 Designing Below a Maximum Current Limit
          5. 10.2.1.2.5 Accounting for Resistor Tolerance
          6. 10.2.1.2.6 Power Dissipation and Junction Temperature
          7. 10.2.1.2.7 Auto-Retry Functionality
          8. 10.2.1.2.8 Two-Level Current-Limit Circuit
      2. 10.2.2 Application Curves
  11. 11Power Supply Requirements
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Trademarks
    2. 13.2 Electrostatic Discharge Caution
    3. 13.3 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range unless otherwise noted(1)(2)
MIN MAX UNIT
Voltage range on IN, OUTx, ENx, ILIM, FAULTx –0.3 7 V
Voltage range from IN to OUTx –7 7 V
Continuous output current Internally Limited
Continuous FAULTx sink current 25 mA
ILIM source current Internally Limited mA
TJ Maximum junction temperature –40 Internally Limited °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltages are referenced to GND unless otherwise noted.

7.2 Handling Ratings

MIN MAX UNIT
TSTG Storage temperature range -65 150 °C
VESD(1) Human Body Model (HBM) AEC-Q100 Classification Level H2 2 kV
Charged Device Model (CDM) AEC-Q100 Classification Level C5 750 V
System level (contact/air) 8/15(2) kV
(1) Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges in to the device.
(2) Surges per EN61000-4-2, 1999 applied between USB connection for VBUS and GND of the TPS2560EVM (HPA424, replacing TPS2560 with TPS2561A-Q1) evaluation module (documentation available on the Web.) These were the test level, no the failure threshold.

7.3 Recommended Operating Conditions

MIN MAX UNIT
VIN Input voltage, IN 2.5 6.5 V
VENx Enable voltage 0 6.5 V
VIH High-level input voltage on ENx 1.1 V
VIL Low-level input voltage on ENx 0.66
IOUTx Continuous output current per channel, OUTx 0 2.5 A
Continuous FAULTx sink current 0 10 mA
TJ Operating junction temperature –40 125 °C
RILIM Recommended resistor limit range 20 187 kΩ

7.4 Thermal Information(1)

THERMAL METRIC TPS2561A-Q1 UNIT
DRC (10 TERMINALS)
θJA Junction-to-ambient thermal resistance 38.1 °C/W
θJCtop Junction-to-case (top) thermal resistance 40.5
θJB Junction-to-board thermal resistance 13.6
ψJT Junction-to-top characterization parameter 0.6
ψJB Junction-to-board characterization parameter 13.7
θJCbot Junction-to-case (bottom) thermal resistance 3.4
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

over recommended operating conditions, VENx = VIN (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
rDS(on) Static drain-source on-state resistance per channel, IN to OUTx TJ = 25°C 44 50 mΩ
–40°C ≤TJ ≤125 °C 70
tr Rise time, output VIN = 6.5 V CLx = 1 μF, RLx = 100 Ω,
(see Figure 9)		 1.5 3 4 ms
VIN = 2.5 V 0.5 2 3
tf Fall time, output VIN = 6.5 V 0.5 0.8 1.0
VIN = 2.5 V 0.3 0.6 0.8
ENABLE INPUT EN
Enable pin turn on/off threshold 0.66 1.1 V
Hysteresis 55(2) mV
IEN Input current VENx = 0 V or 6.5 V –0.5 0.5 μA
ton Turnon time CLx = 1 μF, RLx = 100 Ω, (see Figure 9) 9 ms
toff Turnoff time 6 ms
CURRENT LIMIT
IOS Current-limit (see Figure 11) OUTx connected to GND RILIM = 20 kΩ 2560 2750 2980 mA
RILIM = 24.3 kΩ 2100 2250 2500
RILIM = 61.9 kΩ 800 900 1005
RILIM = 100 kΩ 470 560 645
OUT1 and OUT2 connected to GND RILIM = 47.5 kΩ 2100 2300 2500
tIOS Response time to short circuit VIN = 5 V (see Figure 10) 3.5(2) μs
SUPPLY CURRENT
IIN(off) Supply current, low-level output VIN = 6.5 V, No load on OUTx, VENx = 0 V 0.1 2.0 μA
IIN(on) Supply current, high-level output VIN = 6.5 V, No load on OUT RILIM = 20 kΩ 100 125 μA
RILIM = 100 kΩ 85 110 μA
IREV Reverse leakage current VOUTx = 6.5 V, VIN = 0 V TJ = 25°C 0.01 1.0 μA
UNDERVOLTAGE LOCKOUT
VUVLO Low-level input voltage, IN VIN rising 2.35 2.45 V
Hysteresis, IN TJ = 25°C 35(2) mV
FAULTx FLAG
VOL Output low voltage, FAULTx IFAULTx = 1 mA 180 mV
Off-state leakage VFAULTx = 6.5 V 1 μA
FAULTx deglitch FAULTx assertion or de-assertion due to overcurrent condition 6 9 13 ms
THERMAL SHUTDOWN
Thermal shutdown threshold, OTSD2 155 °C
Thermal shutdown threshold in current-limit, OTSD 135 °C
Hysteresis 20(2) °C
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
(2) These parameters are provided for reference only, and do not constitute part of TI's published specifications for purposes of TI's product warranty.

7.6 Typical Characteristics

uvlo_tj_lvs931.gif
Figure 1. UVLO – Undervoltage Lockout – V
G001_lvsCC6.gif
RLIM = 20 kΩ
Figure 3. IIN – Supply Current, Output Enabled – µA
rdson_tj_lvs930.gif
Figure 5. MOSFET rDS(on) Vs. Junction Temperature
G004_lvsCC6.gif
RLIM = 61.9 kΩ
Figure 7. Switch Current Vs. Drain-Source Voltage Across Switch
iin_tj_lvs931.gif
Figure 2. IIN – Supply Current, Output Disabled – nA
G002_lvsCC6.gif
RLIM = 20 kΩ
Figure 4. IIN – Supply Current, Output Enabled – µA
G003_lvsCC6.gif
RLIM = 100 kΩ
Figure 6. Switch Current Vs. Drain-Source Voltage Across Switch
G005_lvsCC6.gif
RLIM = 20 kΩ
Figure 8. Switch Current vs. Drain-Source Voltage Across Switch