SLVSD95 November   2016 TPS25810-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
      1. 7.1.1 USB Type-C Basic
      2. 7.1.2 Configuration Channel
      3. 7.1.3 Detecting a Connection
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Configuration Channel Pins CC1 and CC2
      2. 7.3.2 Current Capability Advertisement and Overload Protection
      3. 7.3.3 Undervoltage Lockout (UVLO)
        1. 7.3.3.1  Device Power Pins (IN1, IN2, AUX, OUT, and GND)
        2. 7.3.3.2  FAULT Response
        3. 7.3.3.3  Thermal Shutdown
        4. 7.3.3.4  REF
        5. 7.3.3.5  Audio Accessory Detection
        6. 7.3.3.6  Debug Accessory Detection
        7. 7.3.3.7  Plug Polarity Detection
        8. 7.3.3.8  Device Enable Control
        9. 7.3.3.9  Load Detect
        10. 7.3.3.10 Power Wake
        11. 7.3.3.11 Port Power Management (PPM)
        12. 7.3.3.12 Implementing PPM in a System With Two Type-C Ports
        13. 7.3.3.13 PPM Operation
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Type-C DFP Port Implementation Without BC 1.2 Support
        1. 8.2.1.1 Design Requirements
          1. 8.2.1.1.1 Input and Output Capacitance
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Type-C DFP Port Implementation With BC 1.2 (DCP Mode) Support
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RVC|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range, voltages are respect to GND (unless otherwise noted) (1)
MIN MAX UNIT
Pin voltage, V IN1, IN2, AUX, EN, CHG, CHG_HI, REF, OUT, LD_DET, FAULT, CC1, CC2, UFP, POL, AUDIO, DEBUG –0.3 7 V
REF_RTN Internally connected to GND V
Pin positive source current, ISRC OUT, REF, CC1, CC2 Internally limited A
Pin positive sink current, ISNK OUT (while applying VBUS) 5 A
CC1, CC2 (while applying VCONN) 1 A
LD_DET, FAULT, UFP, POL, AUDIO, DEBUG Internally limited mA
Operating junction temperature, TJ –40 180 °C
Storage temperature range, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD)(1) Electrostatic discharge Human-body model (HBM), per per AEC Q100-002(2) ±2 000 V
Charged-device model (CDM), per per AEC Q100-011 ±500
61000-4-2 contact discharge, CC1 and CC2(3) IEC ±8 000
IEC 61000-4-2 air discharge, CC1 and CC2(3) ±15 000
(1) Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges into the device.
(2) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
(3) Surges per IEC61000-402, 1999 applied between CC1/CC2 and output ground of the TPS25810EVM-745.

6.3 Recommended Operating Conditions

Voltages are with respect to GND (unless otherwise noted)
MIN NOM MAX UNIT
VIN Supply voltage IN1 4.5 6.5 V
IN2 4.5 5.5
AUX 2.9 5.5
VI Input voltage EN, CHG, CHG_HI 0 5.5 V
VIH High-level input voltage EN, CHG, CHG_HI 1.17 V
VIL Low-level voltage EN, CHG, CHG_HI 0.63 V
VPU Pullup voltage Used on LD_DET, FAULT, UFP, POL, AUDIO, DEBUG 0 5.5 V
ISRC Positive source current OUT 3 A
CC1 or CC2 when supplying VCONN 250 mA
ISNK Positive sink current (10 ms moving average) LD_DET, FAULT, UFP, POL, AUDIO, DEBUG 10 mA
ISNK_PULSE Positive repetitive pulse sink current LD_DET, FAULT, UFP, POL, AUDIO, DEBUG Internally limited mA
RREF Reference resistor 98 100 102 kΩ
TJ Operating junction temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS25810-Q1 UNIT
RVC (WQFN)
20 PINS
RθJA Junction-to-ambient thermal resistance 39.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 43.4 °C/W
RθJB Junction-to-board thermal resistance 13 °C/W
ψJT Junction-to-top characterization parameter 0.7 °C/W
ψJB Junction-to-board characterization parameter 13 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 4.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

–40°C ≤ TJ ≤ 125°C, 4.5 V ≤ VIN1 ≤ 6.5 V, 4.5 V ≤ VIN2 ≤ 5.5 V, 2.9 V ≤ VAUX ≤ 5.5 V; VEN = VCHG = VCHG_HI = VAUX, RREF = 100 kΩ. Typical values are at 25°C. All voltages are with respect to GND. IOUT and IOS defined positive out of the indicated pin (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUT – POWER SWITCH
rDS(on) On-resistance(1) TJ = 25°C, IOUT = 3 A 34 37 mΩ
–40°C ≤ TJ ≤ 85°C, IOUT = 3 A 34 46
–40°C ≤ TJ ≤ 125°C, IOUT = 3 A 34 55
IREV OUT to IN reverse leakage current VOUT = 6.5 V, VIN1 = VEN = 0 V,
–40°C ≤ TJ ≤ 85°C,
IREV is current out of IN1 pin 		0 3 µA
OUT – CURRENT LIMIT
IOS Short circuit current limit (1) VCHG = 0 V or VCHG = VAUX and VCHG_HI = 0 V 1.58 1.7 1.82 A
3.16 3.4 3.64
RREF = 10 Ω 7
OUT – DISCHARGE
Discharge resistance VOUT = 4 V, UFP signature removed from CC lines, time < tw_DCHG 400 500 600 Ω
Bleed discharge resistance VOUT = 4 V, No UFP signature on CC lines, time > tw_DCHG 100 150 250 kΩ
REF
VO Output voltage 0.78 0.8 0.82 V
IOS Short circuit current RREF = 10 Ω 9.5 15.3 µA
FAULT
VOL Output low voltage IFAULT = 1 mA 350 mV
IOFF Off-state leakage VFAULT = 5.5 V 1 µA
LD_DET
VOL Output low voltage ILD_DET = 1 mA 350 mV
IOFF Off-state leakage VLD_DET = 5.5 V 1 µA
ITH OUT sourcing, rising threshold current for load detect 1.8 1.95 2.1 A
Hysteresis(2) 125 mA
CC1, CC2 – VCONN POWER SWITCH
rDS(on) On-resistance TJ = 25°C, IOUT = 250 mA 365 420 mΩ
–40°C ≤ TJ ≤ 85°C, IOUT = 250 mA 365 530
–40°C ≤ TJ ≤ 125°C, IOUT = 250 mA 365 600
CC1, CC2 – VCONN POWER SWITCH – CURRENT LIMIT
IOS Short-circuit current limit(1) 300 355 410 mA
RREF = 10 Ω 800
CC1, CC2 – CONNECT MANAGEMENT – DANGLING ELECTRONICALLY MARKED CABLE MODE
ISRC Sourcing current on the pass-through CC Line 0 V ≤ VCCx ≤ 1.5 V 64 80 96 µA
Sourcing current on the Ra CC line 0 V ≤ VCCx ≤ 1.5 V 64 80 96
CC1, CC2 – CONNECT MANAGEMENT – ACCESSORY MODE
ISRC CCx sourcing current
(CC2 – audio, CC1-debug) 		0 V ≤ VCCx ≤ 1.5 V 64 80 96 µA
CCx sourcing current
(CC1 – audio, CC2-debug) (2)		 0 V ≤ VCCx ≤ 1.5 V 0
CC1, CC2 – CONNECT MANAGEMENT – UFP MODE
ISRC Sourcing current with either IN1 or IN2 in UVLO 0 V ≤ VCCx ≤ 1.5 V
VIN1 < VTH_UVLO_IN1 or VIN2 < VTH_UVLO_IN2		 64 80 96 µA
ISRC Sourcing current VCHG = 0 V and VCHG_HI = 0 V
0 V ≤ VCCx ≤ 1.5 V 		75 80 85 µA
VCHG = VAUX and VCHG_HI = 0 V
0 V ≤ VCCx ≤ 1.5 V 		170 180 190
VCHG = VAUX and VCHG_HI = VAUX
0 V ≤ VCCx ≤ 2.45 V 		312 330 348
UFP, POL, AUDIO, DEBUG
VOL Output low voltage ISNK_PIN = 1 mA 250 mV
IOFF Off-state leakage VPIN = 5.5 V 1 µA
EN, CHG, CHG_HI – LOGIC INPUTS
VTH Rising threshold voltage 0.925 1.15 V
VTH Falling threshold voltage 0.65 0.875 V
Hysteresis(2) 50 mV
IIN Input current VEN = 0 V or 6.5 V –0.5 0.5 µA
OVERTEMPERATURE SHUTDOWN
TTH_OTSD2 Rising threshold temperature for device shutdown 155 °C
Hysteresis(2) 20 °C
TTH_OTSD1 Rising threshold temperature for OUT/ VCONN switch shutdown in current limit 135 °C
Hysteresis(2) 20 °C
IN1
VTH_UVLO_IN1 Rising threshold voltage for UVLO 3.9 4.1 4.3 V
Hysteresis(2) 100 mV
IIN1(DIS) Disabled supply current VEN = 0 V, –40°C ≤ TJ ≤ 85°C 1 µA
IIN1(CC_OPEN) Enabled supply current with CC lines open –40°C ≤ TJ ≤ 85°C 1 µA
IIN1(Ra) Enabled supply current with accessory or dangling electronically marked cable signature on CC lines 2 µA
IIN1(Rd) Enabled supply current with UFP attached VCHG = 0 V, or VCHG = VAUX and VCHG_HI = 0 V 75 100 µA
85 110
IN2
VTH_UVLO_IN2 Rising threshold voltage for UVLO 3.9 4.1 4.3 V
Hysteresis(2) 100 mV
IIN2(DIS) Disabled supply current VEN = 0 V, –40°C ≤ TJ ≤ 85°C 1 µA
IIN2(CC_OPEN) Enabled supply current with CC lines open –40°C ≤ TJ ≤ 85°C 1 µA
IIN2(Ra) Enabled supply current with accessory or dangling electronically marked cable signature on CC lines 2 µA
IIN2(Rd) Enabled supply current with UFP signature on CC lines
(Includes IN current that provides the CC output current to the UFP Rd resistor) 		VCHG = 0 V, 0 V ≤ VCCx ≤ 1.5 V 98 110 µA
VCHG = VIN and VCHG_HI = 0 V, 0 V ≤ VCCx ≤ 1.5 V 198 215
0 V ≤ VCCx ≤ 2.45 V 348 373
AUX
VTH_UVLO_AUX Rising threshold voltage for UVLO 2.65 2.75 2.85 V
Hysteresis(2) 100 mV
IAUX(DIS) Disabled supply current VEN = 0 V, –40°C ≤ TJ ≤ 85°C 1 µA
IAUX(CC_OPEN) Enabled internal supply current with CC lines open –40°C ≤ TJ ≤ 85°C 0.7 3 µA
IAUX(Ra) Enabled supply current with accessory or dangling active cable signature on CC lines 140 185 µA
IAUX(Rd_noIN) Enabled supply current with UFP termination on CC lines and with either IN1 or IN2 in UVLO VIN1 < VTH_UVLO_IN1 or VIN2 < VTH_UVLO_IN2 145 190 µA
IAUX(Rd) Enabled supply current with UFP termination on CC lines 55 82 µA
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
(2) These parameters are provided for reference only and do not constitute part of TI’s published specifications for purposes of TI’s product warranty.

6.6 Switching Characteristics

–40°C ≤ TJ ≤ 125°C, 4.5 V ≤ VIN1 ≤ 6.5 V, 4.5 V ≤ VIN2 ≤ 5.5 V, 2.9 V ≤ VAUX ≤ 5.5 V; VEN = VCHG = VCHG_HI = VAUX, RREF = 100 kΩ. Typical values are at 25°C. All voltages are with respect to GND. IOUT and IOS defined positive out of the indicated pin (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUT – POWER SWITCH
tr Output-voltage rise time VIN1 = 5 V, CL = 1 µF, RL = 100 Ω (measured from 10% to 90% of final value) 1.2 1.8 2.5 ms
tf Output-voltage fall time 0.35 0.55 0.75 ms
ton Output-voltage turnon time VIN1 = 5 V, CL = 1 µF, RL = 100 Ω 2.5 3.5 5 ms
toff Output-voltage turnoff time 2 3 4.5 ms
OUT – CURRENT LIMIT
tios Current-limit response time to short circuit VIN1 – VOUT = 1 V, RL = 10 mΩ, see Figure 1 1.5 4 µs
FAULT
tDEGA Asserting deglitch due to overcurrent 5.5 8.2 10.7 ms
tDEGA(OC) Asserting deglitch due to overtemperature in current limit(1) 0 ms
tDEGA(OT) Deasserting deglitch 5.5 8.2 10.7 ms
LD_DET
tDEGA Asserting deglitch 45 65 85 ms
tDEGD Deasserting deglitch 1.45 2.15 2.9 s
OUT – DISCHARGE
RDCHG discharge time VOUT = 1 V, time ISNK_OUT > 1 mA after UFP signature removed from CC lines 39 65 96 ms
CC1, CC2 - VCONN POWER SWITCH
tr Output voltage rise time VIN2 = 5 V, CL = 1 µF, RL = 100 Ω (measured from 10% to 90% of final value) 0.15 0.25 0.35 ms
tf Output voltage fall time 0.18 0.22 0.26 ms
ton Output voltage turnon time VIN2 = 5 V, CL = 1 µF, RL = 100 Ω 1 1.5 2 ms
toff Output voltage turnoff time 0.3 0.4 0.55 ms
CC1, CC2 – VCONN POWER SWITCH – CURRENT LIMIT
tres Current limit response time to short circuit VIN2 – VCONN = 1 V, R = 10 mΩ, see Figure 1 1 3 µs
UFP, POL, AUDIO, DEBUG
tDEGR Asserting deglitch 100 150 200 ms
tDEGF Deasserting deglitch 7.9 12.5 17.7 ms
(1) These parameters are provided for reference only and do not constitute part of TI’s published specifications for purposes of TI’s product warranty.
TPS25810-Q1 OSCP_SLVSD95.gif Figure 1. Output Short-Circuit Timing Diagram

6.7 Typical Characteristics

TPS25810-Q1 D001_SLVSCR1.gif
Figure 2. VBUS Current-Limiting Switch On-Resistance vs Temperature
TPS25810-Q1 D003_SLVSCR1.gif
Device = Disabled; (VOUT – VIN) = 6. 5V
Figure 4. OUT Reverse Leakage Current vs Temperature
TPS25810-Q1 D005_SLVSCR1.gif
Figure 6. LD_DET Threshold vs Temperature
TPS25810-Q1 D007_SLVSCR1.gif
Figure 8. IN1 Current With UFP vs Temperature
TPS25810-Q1 D009_SLVSCR1.gif
VAUX = 5 V
Figure 10. AUX Current With UFP vs Temperature
TPS25810-Q1 D002_SLVSCR1.gif
Figure 3. VCONN Current-Limiting Switch On-Resistance vs Temperature
TPS25810-Q1 D004_SLVSCR1.gif
Figure 5. ILIM for VBUS and VCONN vs Temperature
TPS25810-Q1 D006_SLVSCR1.gif
Figure 7. CC Sourcing Current to UFP vs Temperature
TPS25810-Q1 D008_SLVSCR1.gif
Figure 9. IN2 Current With UFP vs Temperature