SLVSCU9B August   2015  – September 2016

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 GND
      2. 8.3.2 VIN
      3. 8.3.3 dV/dT
      4. 8.3.4 BFET
      5. 8.3.5 EN/UVLO
      6. 8.3.6 ILIM
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Simple 3.7-A eFuse Protection for Set Top Boxes
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Step by Step Design Procedure
          2. 9.2.1.2.2 Programming the Current-Limit Threshold: RILIM Selection
          3. 9.2.1.2.3 Undervoltage Lockout Set Point
          4. 9.2.1.2.4 Setting Output Voltage Ramp Time (TdVdT)
            1. 9.2.1.2.4.1 Case 1: Start-Up without Load: Only Output Capacitance COUT Draws Current During Start-Up
            2. 9.2.1.2.4.2 Case 2: Start-Up with Load: Output Capacitance COUT and Load Draws Current During Start-Up
          5. 9.2.1.2.5 Support Component Selection—CVIN
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Inrush and Reverse Current Protection for Hold-Up Capacitor Application (for example, SSD)
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Programming the Current-Limit Threshold: RILIM Selection
          2. 9.2.2.2.2 Undervoltage Lockout Set Point
          3. 9.2.2.2.3 Setting Output Voltage Ramp Time (TdVdT)
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Controlled Power Down using TPS25924x
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 Output Short-Circuit Measurements
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Community Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11 Layout

11.1 Layout Guidelines

  • For all applications, a 0.01-µF or greater ceramic decoupling capacitor is recommended between IN terminal and GND. For hot-plug applications, where input power path inductance is negligible, this capacitor can be eliminated/minimized.
  • The optimum placement of decoupling capacitor is closest to the IN and GND terminals of the device. Care must be taken to minimize the loop area formed by the bypass-capacitor connection, the IN terminal, and the GND terminal of the IC. See Figure 48 for a PCB layout example.
  • High current carrying power path connections must be as short as possible and must be sized to carry at least twice the full-load current.
  • The GND terminal must be tied to the PCB ground plane at the terminal of the IC. The PCB ground must be a copper plane or island on the board.
  • Locate all support components: RILIM, CdVdT and resistors for EN/UVLO, close to their connection pin. Connect the other end of the component to the GND pin of the device with shortest trace length. The trace routing for the RILIM and CdVdT components to the device must be as short as possible to reduce parasitic effects on the current limit and soft start timing. These traces must not have any coupling to switching signals on the board.
  • Protection devices such as TVS, snubbers, capacitors, or diodes must be placed physically close to the device they are intended to protect, and routed with short traces to reduce inductance. For example, a protection Schottky diode is recommended to address negative transients due to switching of inductive loads, and it must be physically close to the OUT pins.
  • Obtaining acceptable performance with alternate layout schemes is possible; however this layout has been shown to produce good results and is intended as a guideline.

11.2 Layout Example

TPS259240 TPS259241 Layout_Ex2_lvscu8.gif Figure 48. Layout Example