SLVSGX1A July   2023  – October 2023 TPS25984

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Description (continued)
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Logic Interface
    7. 7.7 Timing Requirements
    8. 7.8 Switching Characteristics
    9. 7.9 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Undervoltage Protection
      2. 8.3.2  Insertion Delay
      3. 8.3.3  Overvoltage Protection
      4. 8.3.4  Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 8.3.4.1 Slew Rate (dVdt) and Inrush Current Control
          1. 8.3.4.1.1 Start-Up Time Out
        2. 8.3.4.2 Steady-State Overcurrent Protection (Circuit-Breaker)
        3. 8.3.4.3 Active Current Limiting During Start-Up
        4. 8.3.4.4 Short-Circuit Protection
      5. 8.3.5  Analog Load Current Monitor (IMON)
      6. 8.3.6  Mode Selection (MODE)
      7. 8.3.7  Parallel Device Synchronization (SWEN)
      8. 8.3.8  Stacking Multiple eFuses for Unlimited Scalability
        1. 8.3.8.1 Current Balancing During Start-Up
      9. 8.3.9  Analog Junction Temperature Monitor (TEMP)
      10. 8.3.10 Overtemperature Protection
      11. 8.3.11 Fault Response and Indication (FLT)
      12. 8.3.12 Power-Good Indication (PG)
      13. 8.3.13 Output Discharge
      14. 8.3.14 FET Health Monitoring
      15. 8.3.15 Single Point Failure Mitigation
        1. 8.3.15.1 IMON Pin Single Point Failure
        2. 8.3.15.2 ILIM Pin Single Point Failure
        3. 8.3.15.3 IREF Pin Single Point Failure
        4. 8.3.15.4 ITIMER Pin Single Point Failure
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Single Device, Standalone Operation
      2. 9.1.2 Multiple Devices, Parallel Connection
      3. 9.1.3 Multiple eFuses, Parallel Connection With PMBus
      4. 9.1.4 Digital Telemetry Using External Microcontroller
    2. 9.2 Typical Application: 12-V, 3.3-kW Power Path Protection in Data Center Servers
      1. 9.2.1 Application
      2. 9.2.2 Design Requirements
      3. 9.2.3 Detailed Design Procedure
      4. 9.2.4 Application Curves
    3. 9.3 Best Design Practices
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Transient Protection
      2. 9.4.2 Output short-Circuit Measurements
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.5 Electrical Characteristics

(Test conditions unless otherwise noted) –40°C ≤ TJ ≤ 125°C, VIN = 12 V, VDD = 12 V, OUT = Open, VEN/UVLO = 2 V, SWEN = 10 kΩ pull-up to 5 V, RILIM = 550 Ω, RIMON = 1100 Ω, VIREF = 1 V, DVDT = Open, ITIMER = Open, FLT = 10 kΩ pull-up to 5 V, PG = 10 kΩ pull-up to 5 V, TEMP = Open, MODE = Open. All voltages referenced to GND. 
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT SUPPLY (VDD)
VDD VDD input operating voltage range 4.5 16 V
IQON(VDD) VDD ON state quiescent current VVDD > VUVP(R), VEN ≥ VUVLO(R) 0.4 0.55 mA
IQOFF(VDD) VDD OFF state current  VEN < VUVLO(F) 240 µA
VUVP(R) VDD undervoltage protection threshold VDD Rising 4.03 4.20 4.38 V
VUVP(F) VDD undervoltage protection threshold VDD Falling 3.80 4.05 4.24 V
INPUT SUPPLY (IN)
VIN VIN input operating voltage range 4.5 16 V
VUVPIN(R) VIN undervoltage protection threshold VIN Rising 4.00 4.25 4.50 V
VUVPIN(F) VIN undervoltage protection threshold VIN Falling 3.90 4.15 4.40 V
IQON(IN) IN ON state quiescent current VEN ≥ VUVLO(R) 3.2 4.4 mA
IQOFF(IN) IN OFF state current   VEN < VUVLO(F) 400 µA
ENABLE / UNDERVOLTAGE LOCKOUT (EN/UVLO)
VUVLO(R) EN/UVLO pin voltage rising threshold for turning on EN/UVLO  Rising 1.12 1.20 1.28 V
VUVLO(F) EN/UVLO pin voltage falling threshold for turning off and engaging output discharge (primary device) EN/UVLO Falling, MODE = Open 1.02 1.10 1.18 V
EN/UVLO pin voltage threshold for turning off and engaging QOD (secondary device) EN/UVLO Falling, MODE = GND 0.92 0.99 1.08 V
VSD(F) EN/UVLO pin voltage threshold for entering full shutdown EN/UVLO Falling 0.5 0.8 V
IENLKG EN/UVLO pin leakage current –0.1 0.1
µA
OVERVOLTAGE PROTECTION (IN)
VOVP(R) Input overvoltage protection threshold (rising) VIN rising 16.1 16.7 17.1 V
VOVP(F) Input overvoltage protection threshold (falling) VIN falling 15.9 16.6 16.9 V
ON-RESISTANCE (IN - OUT)
RON ON resistance IOUT = 8 A, TJ = 25℃ 0.80 0.87 mΩ
IOUT = 8 A, TJ = –40 to 125℃ 1.16 mΩ
OVERCURRENT PROTECTION REFERENCE (IREF)
IIREF IREF pin internal sourcing current 24.30 24.99 25.68
µA
CURRENT LIMIT (ILIM)
GILIM(LIN) ILIM current monitor gain (ILIM:IOUT) 17.77 18.13 18.41 µA/A
CLREF(SAT)% Ratio of start-up current limit threshold (ILIM) to steady-state overcurrent protection threshold reference (IREF) VOUT > VFB, PG not asserted 23.3 %
ILIM Start-up current limit regulation threshold  RILIM = 138 Ω, VIREF = 1.2 V, VOUT > VFB 31.37 41.50 52.81 A
RILIM = 160 Ω, VIREF = 1..2 V, VOUT > VFB 26.18 34.50 42.05 A
RILIM = 400 Ω, VIREF = 1.2 V, VOUT > VFB 12.48 14.50 16.71 A
RILIM =800 Ω, VIREF = 1.2 V, VOUT > VFB 6.84 9.80 11.84 A
VFB Foldback voltage 1.99 V
OUTPUT CURRENT MONITOR AND OVERCURRENT PROTECTION (IMON)
GIMON IMON current monitor gain (IMON:IOUT) Device in steady state (PG asserted) 17.85 18.13 18.41 µA/A
IOCP Steady-state overcurrent protection (Circuit-Breaker) threshold RIMON = 1100 Ω, VIREF = 1.1 V 53.79 55.11 56.37 A
RIMON = 1100 Ω, VIREF = 1 V 48.90 50.10 51.25 A
RIMON = 1100 Ω, VIREF = 0.5 V 24.43 25.08 25.71 A
RIMON = 1100 Ω, VIREF = 0.24 V 11.64 12.03 12.40 A
TRANSIENT OVERCURRENT BLANKING TIMER (ITIMER)
IITIMER ITIMER pin internal discharge current IOUT > IOCP, ITIMER ↓ 1.88 2.05 2.21
µA
RITIMER ITIMER pin internal pull-up resistance 13.29 13.78 14.45 kΩ
VINT ITIMER pin internal pull-up voltage IOUT < IOCP 3.62 3.66 3.70 V
VITIMERTHR ITIMER comparator falling threshold IOUT > IOCP, ITIMER ↓ 2.05 2.17 2.29 V
ΔVITIMER ITIMER discharge voltage threshold IOUT > IOCP, ITIMER ↓ 1.38 1.50 1.59 V
SHORT-CIRCUIT PROTECTION
IFFT Fixed fast-trip threshold in steady-state PG asserted High, Standalone/Primary mode, MODE = Open 148 A
PG asserted High, Secondary mode, MODE = GND 222 A
SFTREF(LIN)% Scalable fast-trip threshold (IMON) to overcurrent protection threshold reference (IREF) ratio during steady-state Standalone/Primary mode, MODE = Open 200 %
Secondary mode, MODE = GND 225 %
SFTREF(SAT)% Scalable fast-trip threshold (ILIM) to overcurrent protection threshold reference (IREF) ratio during start-up Standalone/Primary mode, MODE = Open 50 %
Secondary mode, MODE = GND 50 %
RON(ACS) Maximum RDSON during active current sharing VILIM > CLREF(ACS)% × VIREF 0.96 1.12 mΩ
GIMON(ACS) IMON:IOUT ratio during active current sharing PG asserted High,  VILIM > CLREF(ACS)% × VIREF 18.09 18.45 18.55 µA/A
CLREF(ACS)% Ratio of active current sharing trigger threshold to steady state overcurrent protection threshold PG asserted High 36.7 %
INRUSH CURRENT PROTECTION (DVDT)
IDVDT DVDT pin charging current Primary/Standalone mode, MODE = Open 1.45 2.01 2.80
µA
GDVDT DVDT gain 18.00 20.57 22.00 V/V
RDVDT DVDT pin to GND discharge resistance 526 Ω
RON(GHI) RON when PG is asserted 0.92 1.40 mΩ
QUICK OUTPUT DISCHARGE (QOD)
IQOD Quick output discharge internal pull-down current VSD(F) < VEN < VUVLO(F), –40 < TJ < 125℃ 14.85 21.43 24.18 mA
TEMPERATURE SENSOR OUTPUT (TEMP)
GTMP TEMP sensor gain 2.58 2.65 2.72 mV/℃
VTMP TEMP pin output voltage TJ = 25℃ 676 679 684 mV
ITMPSRC TEMP pin sourcing current 76 91.9 170 µA
ITMPSNK TEMP pin sinking current 7.6 10 14.5 µA
OVERTEMPERATURE PROTECTION (OTP)
TSD Thermal shutdown threshold TJ Rising 150 °C
TSDHYS Thermal shutdown hysteresis TJ Falling 12.5 °C
FET HEALTH MONITOR
VDSFLT FET D-S fault threshold SWEN = L 0.49 V
SINGLE POINT FAILURE (ILIM, IMON, IREF, ITIMER)
IOC_BKP(LIN) Back-up overcurrent protection threshold (steady -steady) 93 A
IOC_BKP(SAT) Back-up overcurrent protection threshold (start-up) 95 A