SLVSF24C december   2020  – may 2023 TPS272C45

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
    1. 6.1 Recommended Connections for Unused Pins
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SNS Timing Characteristics
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Programmable Current Limit
        1. 9.3.1.1 Inrush Current Handling
        2. 9.3.1.2 Calculating RILIMx
        3. 9.3.1.3 Configuring ILIMx From an MCU
      2. 9.3.2 Low Power Dissipation
      3. 9.3.3 Protection Mechanisms
        1. 9.3.3.1 Short-Circuit Protection
          1. 9.3.3.1.1 VS During Short-to-Ground
        2. 9.3.3.2 Inductive Load Demagnetization
        3. 9.3.3.3 Thermal Shutdown
        4. 9.3.3.4 Undervoltage Lockout on VS (UVLO)
        5. 9.3.3.5 Undervoltage Lockout on Low Voltage Supply (VDD_UVLO)
        6. 9.3.3.6 Power-Up and Power-Down Behavior
        7. 9.3.3.7 Overvoltage Protection (OVPR)
      4. 9.3.4 Diagnostic Mechanisms
        1. 9.3.4.1 Current Sense
          1. 9.3.4.1.1 RSNS Value
            1. 9.3.4.1.1.1 Current Sense Output Filter
        2. 9.3.4.2 Fault Indication
          1. 9.3.4.2.1 Fault Event Diagrams
        3. 9.3.4.3 Short-to-Supply or Open-Load Detection
          1. 9.3.4.3.1 Detection With Switch Enabled
          2. 9.3.4.3.2 Detection With Switch Disabled
        4. 9.3.4.4 Current Sense Resistor Sharing
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Diagnostic
      3. 9.4.3 Active
      4. 9.4.4 Fault
  11. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 IEC 61000-4-5 Surge
      2. 10.1.2 Inverse Current
      3. 10.1.3 Loss of GND
      4. 10.1.4 Paralleling Channels
      5. 10.1.5 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 RILIM Calculation
        2. 10.2.2.2 Diagnostics
          1. 10.2.2.2.1 Selecting the RISNS Value
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.5 Electrical Characteristics

VS = 6 V to 36 V, VDD = 3.0 V to 3.6 V, TJ = -40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT VOLTAGE AND CURRENT
VDS,Clamp VDS clamp voltage FET current = 10 mA, VS = 24 V 49 53 61 V
VS,OVPR VS overvoltage protection rising Measured with respect to the GND pin of the device, ENx = HI 41.5 45.5 50 V
VS,OVPRF VS overvoltage protection recovery falling Measured with respect to the GND pin of the device, ENx = HI 40 43.5 48 V
VS,OVPRD VS overvoltage protection deglitch time Time from triggering the OVP fault to FET turn-off 30 72 85 µs
VS,UVLOR VS undervoltage lockout rising Measured with respect to the GND pin of the device 3.5 4.0 4.5 V
VS,UVLOF VS undervoltage lockout falling Measured with respect to the GND pin of the device 2.4 2.6 2.9 V
VDD,UVLOF VDD  undervoltage lockout falling Measured with respect to the GND pin of the device 2.63 2.8 2.9 V
VDD,UVLOR VDD undervoltage lockout rising Measured with respect to the GND pin of the device 2.74 2.90 3.0 V
ILNOM Continuous load current, per channel One channel enabled, TAMB = 85°C 4.0 A
Two channels enabled, TAMB = 85°C 3.0 A
IOUT(OFF) Output leakage current (per channel) VS <= 36 V, TJ = 85°C
VENx = VDIA_EN = 0 V, VOUT = 0 V		 0.5 3.0 µA
IQ_VS_DS VS quiescent current, Dual Supply input, both channels enabled, diagnostics disabled. VS ≤ 36 V, VDD = 5 V
VENx = HI VDIA_EN = 0 V, IOUTx = 0		 1.05 1.4 mA
IQ_VDD_DS VDD quiescent current, both channels enabled, diagnostics disabled. VS ≤ 36 V, VDD = 3.3 V
VENx = 3.3 V VDIA_EN = 0, IOUTx = 0		 2.0 mA
 IQ_VDD_DS VDD quiescent current, both channels enabled, diagnostics disabled. VS ≤ 36 V, VDD = 5 V
VENx = 5 V VDIA_EN = 0, IOUTx = 0 A		 2.1 mA
IQ_VS_DIA_DS VS quiescent current, Dual Supply input, both channels diagnostics enabled VS ≤ 36 V, VDD = 5 V
VENx = VDIA_EN = 5 V, IOUTx = 0 A		 2.8 mA
IQ_VS_SS VS quiescent current, single  (VS only) supply input, both channels ON diagnostics disabled VENx = HI VDIA_EN = 0 V, IOUTx = 0  4.4 mA
IQ_VS_DIA_SS VS quiescent current, single VS supply input, both channels ON diagnostics enabled VENx = VDIA_EN = HI, IOUTx = 0  4.9 mA
RON CHARACTERISTICS
RON On-resistance
(Includes MOSFET and package)		 6 V ≤ VS ≤ 36 V, IOUTx <  4 A TJ = 25°C 45 mΩ
TJ = 85°C 68 mΩ
TJ = 125°C 78 mΩ
On-resistance when channels are paralleled
(Includes MOSFET and package)		 6 V ≤ VS ≤ 36 V, IOUTx <  4 A
VEN1 tied to VEN2, VOUT1 tied to VOUT2		 TJ = 25°C 23 27 mΩ
TJ = 85°C 34 mΩ
TJ = 125°C 39 mΩ
CURRENT SENSE CHARACTERISTICS
KSNS Current sense ratio
IOUTx / ISNS		 IOUTX = 1 A IOUTX = 1 A 1200
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 4 A 3.33 mA
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 4 A –4.4 4.4 %
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 2 A   1.67   mA
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 2 A –4.4 4.4 %
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 1 A   0.83   mA
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 1 A –4 4 %
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 500 mA   0.425   mA
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 500 mA –6 6 %
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 200 mA 0.17   mA
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 200 mA –10 10 %
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 100 mA   0.083   mA
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 100 mA –18 18 %
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 50 mA 0.0416 mA
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V IOUT = 50 mA -25 25 %
ISNSI Paralleled Paralleled channels current sense accuracy multiplier VEN1 tied to VEN2, VOUT1 tied to VOUT2 and I_Load > 1 A Multiply percentage accuracy specification by this factor 1.2 times
SNS CHARACTERISTICS
ISNSFH ISNS fault high-level VDIA_EN = HI device in FLT state of CH selected, Vs>10V VDIA_EN = HI, device in FLT state of CH selected, Vs>10V 3.333 4.5 5.5 mA
ISNS_HR VS - VSNS headroom needed for current sense functionality VS = 6V, ISNS = 3.4 mA 2.35 V
ISNSleak ISNS leakage, with no load VDIA_EN = HI, VEN = HI,  IL = 0 mA 10 µA
CURRENT LIMIT CHARACTERISTICS
ICL Current limitation Level Heavy overload or short circuit condition RILIMx = GND, open, or out of range (<4.3 kΩ, and > 80 kΩ) 4.3 5.8 6.95 A
ICL Current limitation Level Heavy overload or short circuit condition RILIMx = 5 kΩ, VVS-VOUT > 2 V 3.15 4.1 4.7 A
ICL_LINPK Overcurrent limit threshold(1) Overload condition(1) RILIMx = 5 kΩ VVS-VVOUT < 1V 4.78 A
ICL Current limitation Level Heavy overload or short circuit condition RILIMx = 10 kΩ, VVS-VOUT > 2 V 1.58 2.05 2.3 A
ICL_LINPK Overcurrent limit threshold(1) Overload condition RILIMx = 10 kΩ VVS-VOUT < 1V 2.42 A
ICL ICL Current Limitation Level Heavy overload or short circuit condition RILIMx = 28.7 kΩ, VVS-VVOUT > 2 V 0.52 0.71 0.82 A
ICL_LINPK Overcurrent limit threshold(1) Overload condition(1) RILIMx = 28.7 kΩ, VVS-VOUT < 1 V 0.9 A
KCL Current Limit Ratio 20.5 A * kΩ
ICL_match12 ICL Current Limitation Level - Matching between CH1 and CH2 Heavy overload or short circuit condition RILIMx = 10 kΩ, VVS-VOUT = 24V –10 10 %
ICL_ENPS Peak current before regulation while enabling switch into 100 mohm load RILIMx = 5 kΩ to 20 kΩ, VS = 24V 2.7 times ICL A
ICL Current limitation level during inrush delay period Regulated current @ Short circuit when Enabled RILIMx = 5 kΩ, RILIMD > 40 kΩ VVS-VOUT> 20V 1.3 1.5 1.7 A
tDELAY Nominal  Higher Inrush Current limit time delay range Set by resistor on ILIMD pin in discrete steps 0 22 ms
tDELAY_VAR Variation in  ILIMD pin set delay time  –250 250 µs
ICL,PRLL Paralled Channels Current Limitation Level - Multiplier compared to one channel VEN1 tied to VEN2, VOUT1 tied to VOUT2 RILIMx = 5 kΩ to 20 kΩ 1.1
FAULT CHARACTERISTICS
Rpu_OL Open-load (OL, wire break) detection internal pull-up resistor VENx = 0 V, VDIA_EN = 5 V 125 150 180 kΩ
VOL_off Open-load (OL, wire break) detection voltage VS - VOUT VENx = 0 V, VDIA_EN = 5 V 1.4 2.0 2.5 V
tOL1 Open Load (wire-break) indication-time from ENx falling VENx  HI to LO, VDIA_EN = 5 V, VSEL = X(2)
IOUT = 0 mA, Open load condition		 170 300 440 µs
tOL2 Open load (wire-break) indication-time from DIA_EN rising VENx = 0 V, VDIA_EN = LO to HI, VSEL = X(2)
IOUT = 0 mA, Open Load Condition		 650 µs
tOL3 Open load (wire-break) indication-time from VOUT rising beyond open load threshold VENx = 0 V, VDIA_EN = 5 V, VSEL = X(2)
IOUT = 0 mA, VS - VOUTx = <  2V		 600 µs
TABS Thermal shutdown 160 185 210 °C
TREL Relative thermal shutdown threshold 93 118 143 °C
THYS Thermal shutdown hysteresis 18 24 30 °C
Vol_FLT Fault low-output voltage (Versions A, B, C) IFLT = 2 mA, sink current into the pin 0.4 V
Vol_FLTx Fault low-output voltage Version D IFLT1 , IFLT2= 2 mA, sink current into the pin 0.4 V
tRETRY Retry time Time from fault shutdown until switch re-enable (thermal shutdown or current limit). 1 2 3 ms
EN1 AND EN2 PIN CHARACTERISTICS
VIL, ENx Input voltage low-level 0.8 V
VIH, ENx Input voltage high-level 2 V
VIHYS, ENx Input voltage hysteresis 350 mV
RENx Internal pulldown resistor 0.8 1.5 2.5 MΩ
IIH, EN Input current high-level VEN = 5 V 5 µA
DIA_EN PIN CHARACTERISTICS
VIL, DIA_EN Input voltage low-level 0.8 V
VIH, DIA_EN Input voltage high-level 2 V
VIHYS, DIA_EN Input voltage hysteresis 200 350 530 mV
RDIA_EN Internal pulldown resistor 0.8 1.5 2.5 MΩ
IIH, DIA_EN Input current high-level VDIA_EN = 5 V 2.5 5.0 10.0 µA
SEL Characteristics
VIL, SEL Input voltage low-level 0.8 V
VIH, SEL Input voltage high-level 2 V
VIHYS, SEL Input voltage hysteresis 200 350 530 mV
RSEL Internal pulldown resistor 0.8 1.5 2.5 MΩ
IIH, SEL Input current high-level VDIA_EN = 5 V VDIA_EN = 5 V 2.5 5.0 10.0 µA
LATCH PIN CHARACTERISTICS
VIL, LATCH Input voltage low-level 0.8 V
VIH, LATCH Input voltage high-level 2 V
VIHYS, LATCH Input voltage hysteresis 200 350 530 mV
RLATCH Internal pulldown resistor 0.8 1.5 2.5 MΩ
IIH, LATCH Input current high-level VLATCH = 5 V 2.5 5.0 10.0 µA
(1) The maximum current output under overload condition before current limiting occurs.
(2) SEL must be set to select the relevant channel. Diagnostics are performed on Channel 1 when SEL = 0 and diagnostics are performed on channel 2 when SEL =1