SLUS710E May   2006  – January 2024 TPS28225

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Undervoltage Lockout (UVLO)
      2. 6.3.2 Output Active Low
      3. 6.3.3 Enable/Power Good
      4. 6.3.4 3-State Input
        1. 6.3.4.1 TPS28225 3-State Exit Mode
        2. 6.3.4.2 External Resistor Interference
      5. 6.3.5 Bootstrap Diode
      6. 6.3.6 Upper and Lower Gate Drivers
      7. 6.3.7 Dead-Time Control
      8. 6.3.8 Thermal Shutdown
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Four Phases Driven by TPS28225 Driver
        2. 7.2.2.2 Switching The MOSFETs
        3. 7.2.2.3 List of Materials
      3. 7.2.3 Application Curves
    3. 7.3 System Examples
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V
  • Wide Power System Train Input Voltage: 3V Up to 27V
  • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude
  • Capable to Drive MOSFETs with ≥40A Current per Phase
  • High Frequency Operation: 14ns Propagation Delay and 10ns Rise/Fall Time Allow FSW – 2MHz
  • Capable to Propagate <30ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4Ω) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3mm x 3mm VSON-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers