SLVSD65A March 2016 – May 2016 TPS3890
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | VDD | –0.3 | 7 | V |
SENSE | –0.3 | 7 | ||
RESET | –0.3 | 7 | ||
MR | –0.3 | 7 | ||
VCT | –0.3 | 7 | ||
Current | RESET | –20 | 20 | mA |
Temperature | Operating junction temperature, TJ | –40 | 125 | °C |
Storage temperature, Tstg | –65 | 150 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±1000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±750 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VDD | Power-supply voltage | 1.5 | 5.5 | V | |
VSENSE | SENSE voltage | 0 | 5.5 | V | |
VRESET | RESET pin voltage | 0 | 5.5 | V | |
IRESET | RESET pin current | –5 | 5 | mA | |
CIN | Input capacitor, VDD pin | 0 | 0.1 | µF | |
CCT | Reset timeout capacitor, CT pin | 0 | 22 | µF | |
RPU | Pullup resistor, RESET pin | 1 | 1000 | kΩ | |
TJ | Junction temperature (free-air temperature) | –40 | 25 | 125 | ℃ |
THERMAL METRIC(1) | TPS3890 | UNIT | |
---|---|---|---|
DSE (WSON) | |||
6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 321.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 207.9 | °C/W |
RθJB | Junction-to-board thermal resistance | 281.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 42.4 | °C/W |
ψJB | Junction-to-board characterization parameter | 284.8 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 142.3 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VDD | Input supply voltage | 1.5 | 5.5 | V | ||
VPOR | Power-on reset voltage | VOL(max) = 0.2 V, IRESET = 15 µA | 0.8 | V | ||
IDD | Supply current (into VDD pin) | VDD = 3.3 V, IRESET = 0 mA, –40°C < TJ < 85°C |
2.09 | 3.72 | µA | |
VDD = 3.3 V, IRESET = 0 mA, –40°C < TJ < 105°C |
4.5 | |||||
VDD= 3.3 V, IRESET = 0 mA | 5.8 | |||||
VDD = 5.5 V, IRESET = 0 mA, –40°C < TJ < 85°C |
2.29 | 4 | ||||
VDD = 5.5 V, IRESET = 0 mA, –40°C < TJ < 105°C |
5.2 | |||||
VDD = 5.5 V, IRESET = 0 mA | 6.5 | |||||
VITN, VITP | SENSE input threshold voltage accuracy | –1% | ±0.5% | 1% | ||
VHYST | Hysteresis(1) | 0.325% | 0.575% | 0.825% | ||
ISENSE | Input current | VSENSE = 5 V | 8 | µA | ||
VSENSE = 5 V, TPS389001, TPS389012 | 10 | 100 | nA | |||
ICT | CT pin charge current | 0.90 | 1.15 | 1.35 | µA | |
VCT | CT pin comparator threshold voltage | 1.17 | 1.23 | 1.29 | V | |
RCT | CT pin pulldown resistance | When RESET is deasserted | 200 | Ω | ||
VIL | Low-level input voltage (MR pin) | 0.25 × VDD | V | |||
VIH | High-level output voltage | 0.7 x VDD | V | |||
VOL | Low-level output voltage | VDD ≥ 1.5 V, IRESET = 0.4 mA | 0.25 | V | ||
VDD ≥ 2.7 V, IRESET = 2 mA | 0.25 | |||||
VDD ≥ 4.5 V, IRESET = 3 mA | 0.3 | |||||
ILKG(OD) | Open-drain output leakage | High impedance, VSENSE = VRESET = 5.5 V |
250 | nA |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
tPD(f) | SENSE (falling) to RESET propagation delay | CT = open, VDD = 3.3 V | 18 | µs | ||
CT = open, VDD = 5.5 V | 8 | |||||
tPD(r) | SENSE (rising) to RESET propagation delay | CT = open, VDD = 3.3 V | 25 | µs | ||
tGI(SENSE) | SENSE pin glitch immunity | VDD = 5.5 V | 9 | µs | ||
tGI(MR) | MR pin glitch immunity | VDD = 5.5 V | 100 | ns | ||
tMRW | MR pin pulse duration to assert RESET | 1 | µs | |||
td(MR) | MR pin low to out delay | 250 | ns | |||
tSTRT | Startup delay | 325 | µs |
Tested at VDD = 1.5 V and VDD = 5.5 V, total tests = 136,348 |
Tested at VDD = 1.5 V and VDD = 5.5 V, total tests = 136,348 |
MR = VDD |
VDD = 1.5 V |
VDD = 1.5 V |
VDD = 1.5 V |
VDD = 1.5 V |
VDD = 1.5 V |
VDD = 1.5 V |
Tested at VDD = 1.5 V and VDD = 5.5 V, total tests = 136,348 |
MR = 0 V |
VDD = 5.5 V |
VDD = 5.5 V |
VDD = 5.5 V |
VDD = 5.5 V |
VDD = 5.5 V |
VDD = 5.5 V |