SLUS660I September 2005 – January 2015 TPS40140
PRODUCTION DATA.
PARAMETER | DESCRIPTION |
---|---|
VIN(min) | Minimum operating input voltage |
VIN(max) | Maximum operating input voltage |
VOUT | Output voltage |
IRIPPLE | Inductor peak-peak ripple current |
ITRAN(MAX) | Maximum load transient |
VUNDER | Output voltage undershot |
VOVER | Output voltage overshot |
VRIPPLE(TotOUT) | Total output ripple |
VRIPPLE(COUT) | Output voltage ripple due to output capacitance |
VRIPPLE(CIN) | Input voltage ripple due to input capacitance |
VRIPPLE(CinESR) | Input voltage ripple due to the ESR of input capacitance |
Pswcond | High-side MOSFET conduction loss |
Iswrms | RMS current in the high-side MOSFET |
Rdson(sw) | ON drain-source resistance of the high-side MOSFET |
Pswsw | High-side MOSFET switching loss |
Ipk | Peak current through the high-side MOSFET |
Rdrv | Driver resistance of the high-side MOSFET |
Qgdsw | Gate to drain charge of the high-side MOSFET |
Qgssw | Gate to source charge of the high-side MOSFET |
Vgsw | Gate drive voltage of the high-side MOSFET |
Pswgate | Gate drive loss of the high-side MOSFET |
Qgsw | Gate charge of the high-side MOSFET |
Pswtot | Total losses of the high-side MOSFET |
Psrcond | Low-side MOSFET conduction loss |
Isrrms | RMS current in the low-side MOSFET |
Rdson(sr) | ON drain-source resistance of the low-side MOSFET |
Psrgate | Gate drive loss of the low-side MOSFET |
Qgsr | Gate charge of the low-side MOSFET |
Vgsr | Gate drive voltage of the low-side MOSFET |
Pdiode | Power loss in the diode |
td | Dead time between the conduction of high- and low-side MOSFET |
Vf | Forward voltage drop of the body diode of the low-side MOSFET |
Psrtot | Total losses of the low-side MOSFET |
DCR | Inductor DC resistance |
Ac | The gain of the current sensing amplifier, typically 13 |
ROUT | Output load resistance |
Vramp | Ramp amplitude, typically 0.5 V |
T | Switching period |
Gvc(s) | Control to output transfer function |
Gc(s) | Compensator transfer function |
Tv(s) | Loop gain transfer function |
Acm | Gain of the compensator |
fp | The pole frequency of the compensator |
fz | The zero frequency of the compensator |
These references may be found on the web at www.power.ti.com under Technical Documents. Many design tools and links to additional references, including design software, may also be found at www.power.ti.com
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.