4 Revision History
Changes from E Revision (July 2013) to F Revision
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Added ESD Ratings table, Feature Description section, Device Functional Modes section, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information sectionGo
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Changed VIN to VDD throughout the document for consistencyGo
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Added footnote for reference to Minimum Controllable Pulse Width vs Frequency sectionGo
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Changed TPS40200 to TPS40200-Q1 throughout document Go
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Added note for typical values of internal resistor and voltages Go
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Changed voltage to 8 V (typical) in MOSFET Gate DriveGo
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Changed Programming the Operating Frequency to Selecting the Operating Frequency Go
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Changed equation 4Go
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Changed Programming the Soft-Start Time to Calculating the Soft-Start TimeGo
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Changed equation 5Go
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Deleted Bill of Materials tablesGo
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Added designators Q2 and D2 to Detailed Design ProcedureGo
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Added designator L1 to Detailed Design ProcedureGo
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Added clarification for different values for capacitor C11 and C12 in schematic, which are for the EVM. Modified for use in applications per equations Go
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Changed RRC to R3 in equation definition in Switching Frequency for consistency and clarityGo
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Changed RILM to 31 mΩ in Calculating the Overcurrent Threshold Level and added clarifiying informationGo
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Added capacitor designator C6 in Soft-Start CapacitorGo
Changes from D Revision (July 2011) to E Revision
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Deleted TA test condition and values from Feedback voltage parameter in Electrical CharacteristicsGo