SLUSBO6C JANUARY 2014 – October 2018 TPS40425
PRODUCTION DATA.
As shown in Figure 15, the non smart-power operation is selected and ΔVbe measurement of external diode (x3904) is used for temperature sensing. The external diode must be placed close to the inductor if the inductor DCR is used for current sensing, so that the current readout can be more accurate with temperature compensation. It is recommended to place a 1-nF capacitor between the TSNS pin and AGND, and another 1-nF bypass capacitor for the transistor. A separate AGND trace is recommended for the TSNS signal. Route the TSNS trace and the AGND trace as a differential pair.
For temperature sensing using a smart-power stage as shown in Figure 16, the smart-power operation is selected for temperature sensing. Local bypass capacitors are recommended for the TSNS pin of the TPS40425 device and the TAO pin of the smart power stage. The total capacitance of the two bypass capacitors should not exceed 1 nF. The recommended value for both C10 and C11 is 470 pF.
In all cases, the temperature sense trace must be placed in a quiet area and be as short as possible.
NOTE
When the device is operating in non-smart power mode, the temperature sensing must be based on the Vbe measurement of the external diode. The TAO signal of power stage can not be used for temperature sensing.
When the device is operating in smart-power mode, the temperature sensing must be based on the TAO signal of power stage.