SLUSEZ1 December   2023 TPS4800-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Charge Pump and Gate Driver Output (VS, PU, PD, BST, SRC)
      2. 7.3.2 Capacitive Load Driving Using FET Gate (PU, PD) Slew Rate Control
      3. 7.3.3 Short-Circuit Protection
        1. 7.3.3.1 Short-Circuit Protection With Auto-Retry
        2. 7.3.3.2 Short-Circuit Protection With Latch-Off
      4. 7.3.4 Overvoltage (OV) and Undervoltage Protection (UVLO)
      5. 7.3.5 Reverse Polarity Protection
      6. 7.3.6 Short-Circuit Protection Diagnosis (SCP_TEST)
      7. 7.3.7 TPS48000-Q1 as a Simple Gate Driver
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Application Limitations
        1. 8.1.1.1 Short-Circuit Protection Delay
        2. 8.1.1.2 Short-Circuit Protection Threshold
    2. 8.2 Typical Application: Driving Power at all Times (PAAT) Loads
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DGX|19
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.4.1 Layout Guidelines

  • Place the sense resistor (RSNS) close to the TPS48000-Q1 and then connect RSNS using the Kelvin techniques. Refer to Choosing the Right Sense Resistor Layout for more information on the Kelvin techniques.

    For VDS based Current Sensing, follow the same kevlin techniques across the MOSFET.

  • Choose a 0.1 µF or higher value ceramic decoupling capacitor between VS terminal and GND for all the applications. Consider adding RC network at the supply pin (VS) of the controller to improve decoupling against the power line disturbances.
  • Make the high-current path from the board input to the load, and the return path, parallel and close to each other to minimize loop inductance.
  • Place the external MOSFETs close to the controller GATE drive pins (PU/PD) such that the GATE of the MOSFETs are close to the controller GATE drive pins and forms a shorter GATE loop. Consider adding a place holder for a resistor in series with the Gate of each external MOSFET to damp high frequency oscillations if need arises.
  • Place a TVS diode at the input to clamp the voltage transients during hot-plug and fast turn-off events.
  • Place the external boot-strap capacitor close to BST and SRC pins to form very short loop.
  • Connect the ground connections for the various components around the TPS48000-Q1 directly to each other, and to the TPS48000-Q1 GND, and then connected to the system ground at one point. Do not connect the various component grounds to each other through the high current ground line.