SLUSEW1A January   2024  – December 2024 TPS4810-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Charge Pump and Gate Driver Output (VS, G1PU, G1PD, G2, BST, SRC)
      2. 7.3.2 Capacitive Load Driving Using FET Gate (G1PU, G1PD) Slew Rate Control
      3. 7.3.3 Short-Circuit Protection
        1. 7.3.3.1 Short-Circuit Protection With Auto-Retry
        2. 7.3.3.2 Short-Circuit Protection With Latch-Off
      4. 7.3.4 Undervoltage Protection (UVLO)
      5. 7.3.5 Reverse Polarity Protection
      6. 7.3.6 Short-Circuit Protection Diagnosis (SCP_TEST)
      7. 7.3.7 TPS48100-Q1 as a Simple Gate Driver
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application: Circuit Breaker in Battery Management System (BMS) using Low Side Current Sense
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.3 Short-Circuit Protection

The TPS48100-Q1 feature adjustable short circuit protection. The threshold and response time can be adjusted using RISCP resistor and CTMR capacitor respectively. The device senses the voltage across CS+ and CS– pins.

These pins can be connected across an external high and low side current sense resistor (RSNS) or across the FET drain and source terminals for FET RDSON sensing as shown in Figure 7-5, Figure 7-6 and Figure 7-7 respectively.

TPS4810-Q1 TPS48100-Q1 Application Circuit With External Sense Resistor RSNS Based High Side Current SensingFigure 7-5 TPS48100-Q1 Application Circuit With External Sense Resistor RSNS Based High Side Current Sensing
TPS4810-Q1 TPS48100-Q1 Application Circuit With External Sense Resistor RSNS Based Low Side Current SensingFigure 7-6 TPS48100-Q1 Application Circuit With External Sense Resistor RSNS Based Low Side Current Sensing
TPS4810-Q1 TPS48100-Q1 Application Circuit with MOSFET RDSON Based Current SensingFigure 7-7 TPS48100-Q1 Application Circuit with MOSFET RDSON Based Current Sensing

Set the short-circuit detection threshold using an external RISCP resistor across ISCP and GND pins. Use Equation 5 to calculate the required RISCP value:

Equation 5. R I S C P   ( Ω ) =   I S C × R S N S   -   19   m V 2   μ A

Where,

RSNS is the current sense resistor value or the FET RDSON value.

ISC is the desired short circuit current level.

The short circuit protection response is fastest with no CTMR cap connected across TMR and GND pins.

With device powered ON and EN/UVLO, INP pulled high, During Q1 turn ON, first VGS of external FET Q1 (G1 gate drive) is sensed by monitoring the voltage across G1PD to SRC. Once G1PD to SRC voltage raises above V(G1_GOOD) threshold which ensures that the external FET is enhanced, then the SCP comparator output is monitored. If the sensed voltage across CS+ and CS– exceeds the short-circuit set point (VSCP), G1PD pulls low to SRC and FLT asserts. Subsequent events can be set either to be auto-retry or latch off as described in following sections.

VGS of external FET (Q1) is only monitored when CS_SEL is pulled low. VGS of external FET (Q1) is not monitored for low side current sensing as shown in Figure 7-6.

Note:

Short-circuit threshold can also be set by connecting external bias voltage on ISCP pin via buffer instead of RISCP resistor enabling system design with improved SCP threshold accuracy as mentioned in electrical characteristics table. The external bias voltage to be forced on ISCP pin can be calculated by below eqaution:

V(SCP_BIAS) in mV = ISC x RSNS x 5 - 95mV