SLUSFM1 December   2024 TPS4812-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump and Gate Driver Output (VS, GATE, BST, SRC)
      2. 8.3.2 Capacitive Load Driving
        1. 8.3.2.1 Using Low-Power Bypass FET (G Drive) for Load Capacitor Charging
        2. 8.3.2.2 Using Main FET (GATE Drive) Gate Slew Rate Control
      3. 8.3.3 Overcurrent and Short-Circuit Protection
        1. 8.3.3.1 I2t-Based Overcurrent Protection
          1. 8.3.3.1.1 I2t-Based Overcurrent Protection With Auto-Retry
          2. 8.3.3.1.2 I2t-Based Overcurrent Protection With Latch-Off
        2. 8.3.3.2 Short-Circuit Protection
      4. 8.3.4 Analog Current Monitor Output (IMON)
      5. 8.3.5 NTC-Based Temperature Sensing (TMP) and Analog Monitor Output (ITMPO)
      6. 8.3.6 Fault Indication and Diagnosis (FLT)
      7. 8.3.7 Reverse Polarity Protection
      8. 8.3.8 Undervoltage Protection (UVLO)
    4. 8.4 Device Functional Modes
      1. 8.4.1 State Diagram
      2. 8.4.2 State Transition Timing Diagram
      3. 8.4.3 Power Down
      4. 8.4.4 Shutdown Mode
      5. 8.4.5 Low Power Mode (LPM)
      6. 8.4.6 Active Mode (AM)
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application 1: Driving Power at all times (PAAT) Loads With Automatic Load Wakeup
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Typical Application 2: Driving Power at all times (PAAT) Loads With Automatic Load Wakeup and Output Bulk Capacitor Charging
      1. 9.3.1 Design Requirements
      2. 9.3.2 External Component Selection
      3. 9.3.3 Application Curves
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGE|23
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.2.2 Using Main FET (GATE Drive) Gate Slew Rate Control

In the applications where low power bypass path is not used, the cap charging can be done using main FET GATE drive control.

For limiting inrush current during turn-ON of the main FET with capacitive loads, use R1, R2, C1, and D2 as shown in Figure 8-7. The R1 and C1 components slow down the voltage ramp rate at the gate of main FET. The FET source follows the gate voltage resulting in a controlled voltage ramp across the output capacitors.

TPS4812-Q1 Inrush Current Limiting in Main PathFigure 8-7 Inrush Current Limiting in Main Path

Use the Equation 6 to calculate the inrush current during turn-ON of the FET.

Equation 6. IINRUSH= CLOAD× VBATTTcharge
Equation 7. C1= 0.63 × V(BST - SRC) × CLOADR1 × IINRUSH

Where,

CLOAD is the load capacitance.

VBATT is the input voltage and Tcharge is the charge time.

V(BST-SRC) is the charge pump voltage (12V).

Use a damping resistor R2 (~10Ω) in series with C1. Equation 8 can be used to compute required C1 value for a target inrush current. A 100kΩ resistor for R1 can be a good starting point for calculations.

D2 ensures fast turn OFF of GATE drive by bypassing R1.

C1 results in an additional loading on CBST to charge during turn-ON. Use Equation 8 to calculate the required CBST value:

Equation 8. CBST = Qg(total)∆VBST+ 10 × C1

Where,

Qg(total) is the total gate charge of the FET.

ΔVBST (1V typical) is the ripple voltage across BST to SRC pins.