SLUS984C November   2009  – April 2018 TPS51200-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Standard DDR Application
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Sink and Source Regulator (VO Pin)
      2. 7.3.2 Reference Input (REFIN Pin)
      3. 7.3.3 Reference Output (REFOUT Pin)
      4. 7.3.4 Soft-Start Sequencing
      5. 7.3.5 Enable Control (EN Pin)
      6. 7.3.6 Powergood Function (PGOOD Pin)
      7. 7.3.7 Current Protection (VO Pin)
      8. 7.3.8 UVLO Protection (VIN Pin)
      9. 7.3.9 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 S3 and Pseudo-S5 Support
      2. 7.4.2 Tracking Startup and Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 VTT DIMM Applications
        1. 8.2.1.1 Design Parameters
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 VIN Capacitor
          2. 8.2.1.2.2 VLDO Input Capacitor
          3. 8.2.1.2.3 Output Capacitor
          4. 8.2.1.2.4 Output Tolerance Consideration for VTT DIMM Applications
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Design Example 1
        1. 8.2.2.1 Design Parameters
      3. 8.2.3 Design Example 2
        1. 8.2.3.1 Design Parameters
      4. 8.2.4 Design Example 3
        1. 8.2.4.1 Design Parameters
      5. 8.2.5 Design Example 4
        1. 8.2.5.1 Design Parameters
      6. 8.2.6 Design Example 5
        1. 8.2.6.1 Design Parameters
      7. 8.2.7 Design Example 6
        1. 8.2.7.1 Design Parameters
      8. 8.2.8 Design Example 7
        1. 8.2.8.1 Design Parameters
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resource
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

Over recommended free-air temperature range, VVIN = 3.3 V, VVLDOIN = 1.8 V, VREFIN = 0.9 V, VVOSNS = 0.9 V, VEN = VVIN, COUT = 3 × 10 μF and circuit shown in the Standard DDR Application section (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
IIN Supply current TA = 25 °C, VEN = 3.3 V, No Load 0.7 1 mA
IIN(SDN) Shutdown current TA = 25 °C, VEN = 0 V, VREFIN = 0, No Load 65 80 μA
TA = 25 °C, VEN = 0 V, VREFIN> 0.4 V, No Load 200 400
ILDOIN Supply current ofVLDOIN TA = 25 °C, VEN = 3.3 V, No Load 1 50 μA
ILDOIN(SDN) Shutdown current of VLDOIN TA = 25 °C, VEN = 0 V, No Load 0.1 50 μA
INPUT CURRENT
IREFIN Input current, REFIN VEN = 3.3 V 1 μA
VO OUTPUT
VVOSNS Output DC voltage, VO VREFOUT = 1.25 V (DDR1), IO = 0 A 1.25 V
–15 15 mV
VREFOUT = 0.9 V (DDR2), IO = 0 A 0.9 V
–15 15 mV
VREFOUT = 0.75 V (DDR3), IO = 0 A 0.75 V
–15 15 mV
VREFOUT = 0.675 V (DDR3L), IO = 0 A 0.675 V
-15 15 mV
VREFOUT = 0.6 V (DDR4), IO = 0 A 0.6 V
-15 15 mV
VVOTOL Output voltage tolerance to REFOUT –2A < IVO< 2A –25 25 mV
IVOSRCL VO source vurrent Limit With reference to REFOUT, VOSNS = 90% × VREFOUT 3 4.5 A
IVOSNCL VO sink current Limit With reference to REFOUT, VOSNS = 110% × VREFOUT 3.5 5.5 A
IDSCHRG Discharge current, VO VREFIN = 0 V, VVO = 0.3 V, VEN = 0 V, TA = 25°C 18 25 Ω
POWERGOOD COMPARATOR
VTH(PG) VO PGOOD threshold PGOOD window lower threshold with respect to REFOUT –23.5% –20% –17.5%
PGOOD window upper threshold with respect to REFOUT 17.5% 20% 23.5%
PGOOD hysteresis 5%
VPGOODLOW Output low voltage ISINK = 4 mA 0.4 V
IPGOODLK Leakage current(1) VOSNS = VREFIN (PGOOD high impedance), PGOOD = VIN + 0.2 V 1 μA
REFIN AND REFOUT
VREFIN REFIN voltage range 0.5 1.8 V
VREFINUVLO REFIN undervoltage lockout REFIN rising 360 390 420 mV
VREFINUVHYS REFIN undervoltage lockout hysteresis 20 mV
VREFOUT REFOUT voltage REFIN V
VREFOUTTOL REFOUT voltage tolerance to VREFIN –10 mA ≤ IREFOUT ≤ 10 mA, 0.6 V ≤ VREFIN ≤ 1.25 V –15 15 mV
–1 mA ≤ IREFOUT ≤ 1 mA, 0.6 V ≤ VREFIN ≤ 1.25 V –12 12
IREFOUTSRCL REFOUT source current limit VREFOUT = 0.5 V 10 40 mA
IREFOUTSNCL REFOUT sink current limit VREFOUT = 1.5 V 10 40 mA
UVLO / EN LOGIC THRESHOLD
VVINUVVIN UVLO threshold Wake up, TA = 25°C 2.2 2.3 2.375 V
Hysteresis 50 mV
VENIH High-level input voltage Enable 1.7 V
VENIL Low-level input voltage Enable 0.3 V
VENYST Hysteresis voltage Enable 0.5 V
IENLEAK Logic input leakage current EN, TA = 25°C –1 1 μA
THERMAL SHUTDOWN
TSON Thermal shutdown threshold(1) Shutdown temperature 150 °C
Hysteresis 25
(1) Ensured by design. Not production tested.