The TPS51716 provides a complete power supply for DDR2, DDR3, DDR3L, LPDDR3, and DDR4 memory systems in the lowest total cost and minimum space. It integrates a synchronous buck regulator controller (VDDQ) with a 2-A sink/source tracking LDO (VTT) and buffered low noise reference (VTTREF). The TPS51716 employs D-CAP2 mode coupled with 500 kHz or 670 kHz operating frequencies that supports ceramic output capacitors without an external compensation circuit. The VTTREF tracks VDDQ/2 with excellent 0.8% accuracy. The VTT, which provides 2-A sink/source peak current capabilities, requires only 10 μF of ceramic capacitance. In addition, the device features a dedicated LDO supply input.
The TPS51716 provides rich, useful functions as well as excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT and VTTREF (soft-off) in S4/S5 state. It includes programmable OCL with low-side MOSFET RDS(on) sensing, OVP/UVP/UVLO and thermal shutdown protections.
TI offers the TPS51716 in a 20-pin, 3 mm × 3 mm, WQFN package and specifies it for an ambient temperature range between –40°C and 85°C.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TPS51716 | WQFN (20) | 3.00 mm × 3.00 mm |
Changes from * Revision (October 2012) to A Revision
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
DRVH | 14 | O | High-side MOSFET gate driver output. |
DRVL | 11 | O | Low-side MOSFET gate driver output. |
GND | 7 | — | Signal ground. |
MODE | 19 | I | Connect resistor to GND to configure switching frequency, control mode and discharge mode. (See Table 2) |
PGND | 10 | — | Gate driver power ground. RDS(on) current sensing input(+). |
PGOOD | 20 | O | Powergood signal open drain output. PGOOD goes high when VDDQ output voltage is within the target range. |
REFIN | 8 | I | Reference input for VDDQ. Connect to the midpoint of a resistor divider from VREF to GND. Add a capacitor for stable operation. |
SW | 13 | I/O | High-side MOSFET gate driver return. RDS(on) current sensing input(–). |
S3 | 17 | I | S3 signal input. (See Table 1) |
S5 | 16 | I | S5 signal input. (See Table 1) |
TRIP | 18 | I | Connect resistor to GND to set OCL at VTRIP/8. Output 10-μA current at room temperature, TC = 4700 ppm/°C. |
VBST | 15 | I | High-side MOSFET gate driver bootstrap voltage input. Connect a capacitor from the VBST pin to the SW pin. |
VDDQSNS | 9 | I | VDDQ output voltage feedback. Reference input for VTTREF. Also serves as power supply for VTTREF. |
VLDOIN | 2 | I | Power supply input for VTT LDO. Connect VDDQ in typical application. |
VREF | 6 | O | 1.8-V reference output |
VTT | 3 | O | VTT 2-A LDO output. Need to connect 10 μF or larger capacitance for stability. |
VTTGND | 4 | — | Power ground for VTT LDO |
VTTREF | 5 | O | Buffered VTT reference output. Need to connect 0.22 μF or larger capacitance for stability. |
VTTSNS | 1 | I | VTT output voltage feedback. |
V5IN | 12 | I | 5-V power supply input for internal circuits and MOSFET gate drivers. |
Thermal pad | — | — | Thermal pad. Connect directly to system GND plane with multiple vias. |