SLUSAE1F December   2010  – December 2018 TPS51916

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Application
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  VDDQ Switch Mode Power Supply Control
      2. 7.3.2  VREF and REFIN, VDDQ Output Voltage
      3. 7.3.3  Soft-Start and Powergood
      4. 7.3.4  Power State Control
      5. 7.3.5  Discharge Control
      6. 7.3.6  VTT and VTTREF
      7. 7.3.7  VDDQ Overvoltage and Undervoltage Protection
      8. 7.3.8  VDDQ Out-of-Bound Operation
      9. 7.3.9  VDDQ Overcurrent Protection
      10. 7.3.10 VTT Overcurrent Protection
      11. 7.3.11 V5IN Undervoltage Lockout Protection
      12. 7.3.12 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 MODE Pin Configuration
      2. 7.4.2 D-CAP™ Mode
    5. 7.5 D-CAP2™ Mode Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 DDR3, D-CAP™ 400-kHz Application with Tracking Discharge
        1. 8.1.1.1 Design Requirements
        2. 8.1.1.2 Detailed Design Procedure
          1. 8.1.1.2.1 1. Determine the value of R1 AND R2
          2. 8.1.1.2.2 2. Choose the inductor
          3. 8.1.1.2.3 3. Choose the OCL setting resistance, RTRIP
          4. 8.1.1.2.4 Choose the output capacitors
        3. 8.1.1.3 Application Curves
      2. 8.1.2 DDR3, DCAP-2 500-kHz Application, with Tracking Discharge
        1. 8.1.2.1 Design Requirements
        2. 8.1.2.2 Detailed Design Procedure
          1. 8.1.2.2.1 Select Mode and Switching Frequency
          2. 8.1.2.2.2 Determine output capacitance
        3. 8.1.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

The TPS51916 device provides a complete power supply for DDR2, DDR3, DDR3L, and DDR4 memory systems in the lowest total cost and minimum space. It integrates a synchronous buck regulator controller (VDDQ) with a 2-A sink and 2-A source tracking LDO (VTT) and buffered low noise reference (VTTREF).

The device employs D-CAP™ mode coupled with 300 kHz or 400 kHz frequencies for ease-of-use and fast transient response or D-CAP2™ mode coupled with higher 500 kHz or 670 kHz frequencies to support ceramic output capacitor without an external compensation circuit. The VTTREF tracks VDDQ/2 within excellent 0.8% accuracy. The VTT, which provides 2-A sink and 2-A source peak current capabilities, requires only 10-μF of ceramic capacitance. A dedicated LDO supply input is available.

The device also provides excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT and VTTREF (soft-off) in S4 or S5 state. Programmable OCL with low-side MOSFET RDS(on) sensing, OVP, UVP, UVLO and thermal shutdown protections are also available.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
TPS51916 QFN (20) 3 mm × 3 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Application

TPS51916 simp_app_fiddler3.gif

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